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book/SiC
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chn 06a483db29 add book
2024-06-11 17:04:10 +08:00
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2024-04-04 18:13:39 +08:00
4H-SiC厚膜外延关键技术研究和器件验证.md
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2024-05-19 18:41:34 +08:00
4H-SiC厚膜外延关键技术研究和器件验证.pdf
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2024-04-03 19:50:18 +08:00
4H-Silicon Carbide as an Acoustic Material for MEMS.md
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2024-02-01 13:58:07 +08:00
A Model of Silicon Carbide Chemical Vapor Deposition.md
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2024-06-11 17:04:10 +08:00
A Model of Silicon Carbide Chemical Vapor Deposition.pdf
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2024-06-11 17:04:10 +08:00
A new theoretical approach to adsorption-desorption behavior of Ga on GaAs surfaces.md
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2024-05-09 20:18:50 +08:00
A new theoretical approach to adsorption-desorption behavior of Ga on GaAs surfaces.pdf
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2024-05-09 20:18:50 +08:00
Ab initio study for adsorption and desorption behavior at step edges of GaN (0001) surface.md
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2024-05-09 20:18:50 +08:00
Ab initio study for adsorption and desorption behavior at step edges of GaN (0001) surface.pdf
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2024-04-15 11:17:15 +08:00
Analysis of surface diffusion of carbon- and nitrogen-containing molecules during homoepitaxial growth of 4H-SiC (0001) under silicon-rich conditions.md
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2024-04-28 11:29:08 +08:00
Analysis of surface diffusion of carbon- and nitrogen-containing molecules during homoepitaxial growth of 4H-SiC (0001) under silicon-rich conditions.pdf
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2024-04-27 19:10:24 +08:00
Anisotropic deformation of 4H-SiC wafers insights from nanoindentation tests.md
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2024-04-12 18:05:47 +08:00
Anisotropic deformation of 4H-SiC wafers insights from nanoindentation tests.pdf
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2024-04-11 20:48:28 +08:00
Assessing the effect of hydrogen on the electronic properties of 4H-SiC.md
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2024-04-12 18:05:47 +08:00
Assessing the effect of hydrogen on the electronic properties of 4H-SiC.pdf
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2024-04-11 20:48:28 +08:00
Burton-Cabrera-Frank theory for surfaces with alternating step types.md
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2024-06-11 17:04:10 +08:00
Burton-Cabrera-Frank theory for surfaces with alternating step types.pdf
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2024-06-11 17:04:10 +08:00
Characterizations on the doping of single-crystal silicon carbide.md
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2024-04-13 18:02:04 +08:00
Characterizations on the doping of single-crystal silicon carbide.pdf
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2024-04-04 18:13:39 +08:00
Chemical–Mechanical Polishing of 4H Silicon Carbide Wafers.pdf
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2024-04-11 20:48:28 +08:00
Compensation of p-type doping in Al-doped 4H-SiC.pdf
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2024-04-11 20:48:28 +08:00
Composition, structure, and stability of RuO2 110 as a function of oxygen pressure.md
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2024-05-15 20:11:06 +08:00
Composition, structure, and stability of RuO2 110 as a function of oxygen pressure.pdf
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2024-05-13 01:28:33 +08:00
Crack healing behavior of 4H-SiC Effect of dopants.pdf
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2024-04-11 20:48:28 +08:00
Deep learning inter-atomic potential for irradiation damage in 3C-SiC.md
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2023-12-29 15:11:15 +08:00
Deep learning inter-atomic potential for irradiation damage in 3C-SiC.pdf
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2023-12-29 15:11:15 +08:00
Defect Inspection Techniques in SiC.pdf
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2024-04-11 20:48:28 +08:00
Deformation of 4H-SiC: The role of dopants.pdf
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2024-04-09 18:51:46 +08:00
Direct observation of the distribution of impurity in phosphorous boron co-doped Si nanocrystals.pdf
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2024-04-11 20:48:28 +08:00
Discrimination of dislocations in 4H-SiC by inclination angles of molten-alkali etched pits.pdf
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2024-04-11 20:48:28 +08:00
Dislocation-related leakage-current paths of 4H silicon carbide.pdf
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2024-04-11 20:48:28 +08:00
Dislocations in 4H silicon carbide.pdf
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2024-04-11 20:48:28 +08:00
Doping-dependent nucleation of basal plane dislocations in 4H-SiC.pdf
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2024-04-11 20:48:28 +08:00
Doping-induced strain and relaxation of Al-doped 4H-SiC homoepitaxial layers.pdf
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2024-06-11 17:04:10 +08:00
Dynamic behavior of clusters in the early stage of SiC (0001) epitaxial growth: A Kinetic Monte Carlo study.pdf
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2024-04-27 19:10:24 +08:00
Effect of hydrogen on the unintentional doping of 4H silicon carbide.pdf
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2024-04-11 20:48:28 +08:00
Effect of nitrogen doping on the dislocation behaviors of 4H-SiC.pdf
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2024-04-11 20:48:28 +08:00
Effect of Step Edges on Adsorption Behavior for GaN(0001) Surfaces during Metalorganic Vapor Phase Epitaxy: An Ab Initio Study.pdf
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2024-04-15 11:17:15 +08:00
Effect of step edges on the adsorption behavior on vicinal AlN(0001) surface during metal-organic vapor phase epitaxy: An ab initio study.md
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2024-05-04 19:13:59 +08:00
Effect of step edges on the adsorption behavior on vicinal AlN(0001) surface during metal-organic vapor phase epitaxy: An ab initio study.pdf
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2024-04-15 11:17:15 +08:00
Effect of Subsurface Damages in the Seed Crystal on the Crystal Quality of 4h-Sic Single Crystals Grown by the PVT Technology.pdf
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2024-04-11 20:48:28 +08:00
Electronic and Optical Properties of Threading Dislocations in n-Type 4H-SiC.pdf
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2024-04-11 20:48:28 +08:00
Electronic, Magnetic, and Optical Performances of Non-Metals Doped Silicon Carbide.pdf
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2024-04-04 18:13:39 +08:00
Enhancement of high-temperature deformation in fine-grained silicon carbide with Al doping.pdf
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2024-06-11 17:04:10 +08:00
Estimation of supersaturation at steps during chemical vapor deposition of 4H-SiC (0001) from reported growth rate and cross-sectional profile of spiral hillock.md
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2024-06-11 17:04:10 +08:00
Estimation of supersaturation at steps during chemical vapor deposition of 4H-SiC (0001) from reported growth rate and cross-sectional profile of spiral hillock.pdf
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2024-06-11 17:04:10 +08:00
First-Principles Study of Metal Impurities in Silicon Carbide: Structural, Magnetic, and Electronic Properties.pdf
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2024-04-04 18:13:39 +08:00
Floating Electron States in Covalent Semiconductors.pdf
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2024-04-11 20:48:28 +08:00
GAS PHASE KINETICS ANALYSIS AND IMPLICATIONS FOR SILICON CARBIDE CHEMICAL VAPOR DEPOSITION.md
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2024-06-11 17:04:10 +08:00
GAS PHASE KINETICS ANALYSIS AND IMPLICATIONS FOR SILICON CARBIDE CHEMICAL VAPOR DEPOSITION.pdf
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2024-06-11 17:04:10 +08:00
Gas-Phase Reaction of Trimethylgallium and Ammonia: Experimental Determination of the Equilibrium Constant and ab Initio Calculations.pdf
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2024-06-11 17:04:10 +08:00
Identification of subsurface damage of 4H-SiC wafers by combining photo-chemical etching and molten-alkali etching.pdf
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2024-04-11 20:48:28 +08:00
Impurities and defects in 4H silicon carbide.md
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2024-04-11 20:48:28 +08:00
Impurities and defects in 4H silicon carbide.pdf
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2024-04-11 20:48:28 +08:00
Ion Implantation Doping in Silicon Carbide and Gallium Nitride Electronic Devices.pdf
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2024-04-04 18:13:39 +08:00
Kick-out diffusion of Al in 4H-SiC: an ab initio study.md
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2024-04-11 20:48:28 +08:00
Kick-out diffusion of Al in 4H-SiC: an ab initio study.pdf
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2024-04-09 18:51:46 +08:00
MD simulation study on defect evolution and doping efficiency of p-type doping of 3C-SiC by Al ion implantation with subsequent annealing.md
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2024-04-27 19:10:24 +08:00
MD simulation study on defect evolution and doping efficiency of p-type doping of 3C-SiC by Al ion implantation with subsequent annealing.pdf
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2024-04-26 22:59:05 +08:00
Mechanism of collective interstitial ordering in Fe-C alloys SUPPLEMENTARY INFORMATION.pdf
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2024-05-19 18:41:34 +08:00
Mechanism of collective interstitial ordering in Fe-C alloys.md
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2024-05-19 18:41:34 +08:00
Mechanism of collective interstitial ordering in Fe-C alloys.pdf
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2024-05-19 18:41:34 +08:00
Molecular beam epitaxy growth and scanning tunneling microscopy study of 2D layered materials on epitaxial graphene silicon carbide.pdf
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2024-04-11 20:48:28 +08:00
Nitrogen Decoration of Basal-Plane Dislocations in 4H-SiC.pdf
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2024-04-11 20:48:28 +08:00
Nitrogen-Dependent Electronic Properties of Threading Edge Dislocations in 4H-SiC.pdf
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2024-04-11 20:48:28 +08:00
Nucleation of Threading Dislocations in 4H-SiC at Early Physical-Vapor-Transport Growth Stage.pdf
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2024-04-11 20:48:28 +08:00
Numerical analysis of the dislocation density in n-type 4H-SiC.pdf
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2024-04-11 20:48:28 +08:00
Numerical Simulation of a Novel Method for PVT Growth of SiC by Adding a Graphite Block.pdf
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2024-04-11 20:48:28 +08:00
Observation of stacking faults formed during homoepitaxial growth of p-type 4H-SiC.md
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2024-05-19 18:41:34 +08:00
Observation of stacking faults formed during homoepitaxial growth of p-type 4H-SiC.pdf
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2024-05-19 18:41:34 +08:00
Optimization of the thermal field of 8-inch SiC crystal growth by PVT method with 3 separation heater method.pdf
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2024-04-11 20:48:28 +08:00
Optimizing the flatness of 4H-silicon carbide wafers by tuning the sequence of lapping.pdf
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2024-04-11 20:48:28 +08:00
Phonon-limited carrier mobilities and Hall factors in 4H-SiC from first principles.pdf
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2024-04-11 20:48:28 +08:00
Photogated Synaptic Transistors Based on the Heterostructure of 4H-SiC and Organic Semiconductors for Neuromorphic Ultraviolet Vision.pdf
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2024-04-11 20:48:28 +08:00
Physical-Vapor-Transport growth of 4H silicon carbide single crystals by a tiling method.pdf
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2024-04-11 20:48:28 +08:00
Review of Silicon Carbide Processing for Power MOSFET.md
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2023-12-28 18:31:00 +08:00
Review of Silicon Carbide Processing for Power MOSFET.pdf
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2023-12-28 18:31:00 +08:00
Role of the Growth Facet on the Generation and Expansion of Stacking Faults in PVT-Grown n‑Type 4H-SiC Single-Crystal Boules.pdf
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2024-04-11 20:48:28 +08:00
Selective Doping in Silicon Carbide Power Devices.md
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2024-04-09 18:51:46 +08:00
Selective Doping in Silicon Carbide Power Devices.pdf
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2024-04-04 18:13:39 +08:00
Silicon carbide detectors for sub-GeV dark matter.md
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2024-01-12 11:41:22 +08:00
Silicon carbide detectors for sub-GeV dark matter.pdf
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2024-01-12 11:41:22 +08:00
Silicon Carbide Photonics Bridging Quantum Technology.md
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2024-01-18 19:27:54 +08:00
Silicon Carbide Photonics Bridging Quantum Technology.pdf
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2024-01-18 19:27:54 +08:00
Slicing of 4H-SiC Wafers Combining Ultrafast Laser Irradiation and Bandgap-Selective Photo-Electrochemical Exfoliation.pdf
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2024-04-11 20:48:28 +08:00
Springer Handbook of Surface Science.md
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2024-05-09 20:18:50 +08:00
Springer Handbook of Surface Science.pdf
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2024-05-08 20:19:56 +08:00
Step-Controlled Epitaxial Growth of High-Quality SiC Layers.md
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2024-06-11 17:04:10 +08:00
Step-Controlled Epitaxial Growth of High-Quality SiC Layers.pdf
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2024-06-11 17:04:10 +08:00
Study of Effects of Varying Parameters on the Dislocation Density in 200 Mm Sic Bulk Growth.pdf
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2024-04-11 20:48:28 +08:00
Surface Acoustic Wave (SAW) Sensors: Physics, Materials, and Applications.md
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2024-01-05 11:51:08 +08:00
Surface Acoustic Wave (SAW) Sensors: Physics, Materials, and Applications.pdf
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2024-01-05 11:51:08 +08:00
Surface defects in 4H-SiC properties, characterizations and passivation schemes.pdf
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2024-04-11 20:48:28 +08:00
Surface Science.md
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2024-04-27 19:10:24 +08:00
Surface Science.pdf
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2024-04-27 10:12:33 +08:00
The Creation of True Two-Dimensional Silicon Carbide.md
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2024-01-12 15:33:48 +08:00
The Creation of True Two-Dimensional Silicon Carbide.pdf
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2024-01-12 15:33:48 +08:00
Theoretical consideration of step-flow and two-dimensional nucleation modes in homoepitaxial growth of on (0001) vicinal surfaces under silicon-rich condition.md
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2024-06-11 17:04:10 +08:00
Theoretical consideration of step-flow and two-dimensional nucleation modes in homoepitaxial growth of on (0001) vicinal surfaces under silicon-rich condition.pdf
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2024-06-11 17:04:10 +08:00
Theoretical study on the improvement of the doping efficiency of Al in 4H-SiC by co-doping group-IVB elements.pdf
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2024-04-11 20:48:28 +08:00
Understanding Al incorporation into 4H-SiC during epitaxy.pdf
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2024-04-09 18:51:46 +08:00
X‑ray Absorption Fine Structural Study of Atomic Structures and Chemical States of Dopants in 4H-SiC 0001.pdf
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2024-06-11 17:04:10 +08:00