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SiC/Characterizations on the doping of single-crystal silicon carbide.pdf
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SiC/Characterizations on the doping of single-crystal silicon carbide.pdf
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SiC/Electronic, Magnetic, and Optical Performances of Non-Metals Doped Silicon Carbide.pdf
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SiC/Electronic, Magnetic, and Optical Performances of Non-Metals Doped Silicon Carbide.pdf
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SiC/First-Principles Study of Metal Impurities in Silicon Carbide: Structural, Magnetic, and Electronic Properties.pdf
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SiC/First-Principles Study of Metal Impurities in Silicon Carbide: Structural, Magnetic, and Electronic Properties.pdf
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SiC/Ion Implantation Doping in Silicon Carbide and Gallium Nitride Electronic Devices.pdf
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SiC/Ion Implantation Doping in Silicon Carbide and Gallium Nitride Electronic Devices.pdf
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SiC/Selective Doping in Silicon Carbide Power Devices.md
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SiC/Selective Doping in Silicon Carbide Power Devices.md
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# Abstract
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SiC 掺杂一般使用离子注入的方法,在那之后需要高温退火(超过 1500 摄氏度)来电激活,因此会对结构有影响。
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# Introduction
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SiC 离子注入掺杂相关的效应包括 crystal damage,amorphization and recrystallization,doping,annealing,contact formation 等。
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也有非离子注入掺杂的方法,包括 alternative annealing techniques,laser activation processes in specific environments,
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high-temperature annealing of metal films based on p-type dopant species 等。
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# Background on Selective Doping in SiC Power Devices
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一般使用 Al 作 p 掺杂,P 和 N 作 n 掺杂。它们作为替位杂质时有电活性,其中 N 替 C 位,P 和 Al 替 Si 位。
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杂质的电离能与替位的位置(六角还是立方)有关,N 和 P 的电离能较低,电离率较高(50% 到 100%),
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而 Al 的电离能较高(200 到 250 meV),电离率较低(5% 到 30%)。
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![image-20240404163156998](assets/image-20240404163156998.png)
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电离能与浓度有关,一个经验公式是:
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$$
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E_{\text{A}} = E_0 - \alpha N^{1/3}
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$$
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其中 $\alpha$ 的值通常是 2 到 4 $\times 10^{-5}$ meV cm。
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在 Si 中,使用离子注入和离子扩散的方法都可以掺杂;但在 SiC 中,离子迁移非常困难,因此只能使用离子注入的方法。
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# n-Type and p-Type Ion-Implantation Doping of SiC
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TODO: 退火发生在哪一步?是外延中掺杂之后也需要退火,还是只有离子注入后才需要退火?
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常温离子注入会引入过多缺陷,因此一般使用高温离子注入,使得产生的缺陷能够动态地修复。
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离子注入后的退火一般也需要高温(超过 1500 摄氏度),它除了激活离子、将缺陷移动到替位、修复一些缺陷。
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低温下,离子注入的浓度有极限,高的离子浓度需要高温下的离子注入。
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SiC/Selective Doping in Silicon Carbide Power Devices.pdf
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SiC/Selective Doping in Silicon Carbide Power Devices.pdf
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SiC/assets/image-20240404163156998.png
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SiC/assets/image-20240404163156998.png
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@ -33,7 +33,6 @@ NV 的温度依赖的自旋-声子耦合导致的自旋弛豫最近被通过解
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关于自旋浴导致的自旋弛豫过程的研究关注于强环境耦合的区域,动态核极化可以达到。
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在接下来,第二节会介绍理论和实现,第三节会展示一个例子中使用不同近似的效果,第四节会提供 NV 的模拟结果,第五节总结。
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# METHODOLOGY
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