TODO.md

@@ -1,9 +1,16 @@
 * [ ] 文本
   * [ ] method
-    * [ ] 无缺陷和缺陷的模型大小、缺陷结构
+    * [ ] 几个外延片
+      * [x] 中文
+      * [x] 英文
+      * [ ] 调整语言
+    * [ ] 拉曼实验
+    * [ ] 模型总述
+    * [ ] 无缺陷和点缺陷的模型大小、结构
       * [x] 中文
       * [ ] 英文
       * [ ] 填充数据和引用
+    * [ ] 面缺陷的模型大小、结构
     * [ ] 第一性原理计算和声子计算的工具
       * [x] 中文
       * [ ] 英文

paper/method/default.typ

@@ -10,12 +10,12 @@
 生长时 Si/C 比分别为 0.7 1.2 1.6 2.4 2.0。、
 所有外延片都有 4 度斜切。
 
-Five 6-inch p-type epitaxial wafers on n-type substrates were used, denoted as W#sub[1]-W#sub[5].
-All epitaxial layers were grown using step-flow method with a 4° offcut angle.
-The Al doping concentrations in the epitaxial layers
-  were 0.1, 3.8, 5.1, 6.4, and 10 #sym.times 10 cm#super[-3] (measured using SIMS)
-  with W#sub[1]-W#sub[4] having a thickness of 1 μm and W#sub[5] having a thickness of 2 μm, respectively.
-The Si/C ratios of the five wafers during growth were 0.7, 1.2, 1.6, 2.4, and 2.0, respectively.
+Five 6-inch p-type epitaxial wafers (W#sub[1]–W#sub[5]) were fabricated on n-type substrates
+  using the step-flow growth method with a 4° offcut angle.
+The Al doping concentrations, determined by SIMS,
+  were 0.1, 3.8, 5.1, 6.4, and 10 #sym.times 10 cm#super[-3] for W#sub[1]–W#sub[5], respectively.
+W#sub[1]–W#sub[4] had an epitaxial layer thickness of 1 μm, while W#sub[5] had a thickness of 2 μm.
+The Si/C ratios during growth were 0.7, 1.2, 1.6, 2.4, and 2.0 for the five wafers, respectively.
 
 拉曼设备的型号。激光的波长，背散射。共焦针孔。