35 lines
2.1 KiB
Markdown
35 lines
2.1 KiB
Markdown
* 2014 碳化硅单晶抛光片
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* 2008 Characterization of defects in silicon carbide by Raman spectroscopy
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* 2011 Determination of the transport properties in 4H-SiC wafers by Raman scattering measurement
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* 1997 Light scattering by a multicomponent plasma coupled with longitudinal-optical phonons: Raman spectra of p-type GaAs:Zn
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* 2008 n-SiC 的电子拉曼散射及二级拉曼谱研究
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* 2010 n-SiC拉曼散射光谱的温度特性
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* 2015 Probing optical phonon thermal and defect properties of 3C-SiC Si (001)
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* 2008 Raman analysis of defects in n-type 4H-SiC
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* 1972 Raman Scattering from Electronic Excitations in n-Type Silicon Carbide
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* 2016 Raman scattering properties of structural defects in SiC 讨论了 6H-SiC 中一些缺陷的拉曼特征
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* 1999 Resonance enhancement of electronic Raman scattering from nitrogen defect levels in silicon carbide
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* 1997 Raman Investigation of SiC Polytypes
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综述，前半部分研究晶型、层错、离子注入损伤导致的拉曼，后半部分电子性质导致的拉曼。
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有讨论到 p-SiC，他认为自由电子会贡献一个连续带，直到大约 1000 cm-1。更详细的讨论在引用文献 54（未发表）和 55（Si）
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* Interaction between electronic and vibronic Raman scattering in heavily doped silicon
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* Spatial characterization of doped SiC wafers by Raman spectroscopy
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* 2005 Raman scattering characterization on SiC
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内容杂，不好概括，但与 p 型无关
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* 2005 Deep ultraviolet Raman scattering characterization of ion-implanted SiC crystals
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使用拉曼研究 SiC 离子注入再退火后，恢复得怎样。使用的是 p 型外延的 SiC。
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* 2006 Raman spectroscopy study of heavy-ion-irradiated α-SiC
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研究 3C 离子注入后，拉曼如何改变。其中提到了 Si-Si 与 C-C 键的拉曼峰的位置。
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* 2010 Effect of doping on the Raman scattering of 6H-SiC crystals
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这个看起来有正经研究我们需要的内容，需要仔细看看。
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他认为，掺杂之后，无论是 N 还是 Al，6H 的一阶峰都会红移，而二阶峰不受到影响。 |