paper/method/fig-axis.typ

@@ -0,0 +1,16 @@
+#figure(
+  image("/画图/坐标/embed.svg"),
+  caption: [
+    (a) Phonon dispersion of 4H-SiC along the A–#sym.Gamma–K high-symmetry path.
+      Gray lines represent negligible-polar phonon modes,
+        while colored lines indicate strong-polar phonon modes.
+      The green, red and blue lines indicate the mode along the z-direction, y-direction and x-direction, respectively.
+      Along A-#sym.Gamma path, strong-polar modes along x- and y-directions are degenerated,
+        showing as a single purple line.
+    (b) Magnified view of the boxed region in (a).
+      The orange dashed lines mark the phonon wavevectors involved in Raman scattering
+        with incident light along the z- and y-directions.
+    (c) Magnified view of the boxed region in (b).
+  ],
+  placement: none,
+)<figure-axis>

paper/method/wafer.typ

@@ -12,7 +12,7 @@ Five 6-inch p-type epitaxial wafers (W#sub[1]–W#sub[5]) were fabricated on n-t
   using the step-flow growth method with a 4° offcut angle.
 The Al doping concentrations, determined by SIMS,
   were 0.1, 3.8, 5.1, 6.4, and 10 #sym.times 10 cm#super[-3] for W#sub[1]–W#sub[5], respectively.
-W#sub[1]–W#sub[4] had an epitaxial layer thickness of 1 μm, while W#sub[5] had a thickness of 2 μm.
+The W#sub[1]–W#sub[4] had an epitaxial layer thickness of 1 μm, while W#sub[5] had a thickness of 2 μm.
 The Si/C ratios during growth were 0.7, 1.2, 1.6, 2.4, and 2.0 for the five wafers, respectively.
 
 坐标轴的定义
@@ -24,3 +24,5 @@ The Si/C ratios during growth were 0.7, 1.2, 1.6, 2.4, and 2.0 for the five wafe
 此定义与实验中常用的定义一致，包括晶圆的切边沿 xxx 方向（即 xx 轴）、台阶流外延过程中台阶生长的方向为 xxx （即 xx 轴），台阶边沿 沿 y 方向（即 yy 轴）。
 此定义也与 material projects 数据库以及一些文献中的定义一致。
 然而，此定义与其它一些文献中的定义不同，尤其是与群论中的定义不一致；本文中引用结论时，会将它们的定义转换为本文的定义。
+
+#include "fig-axis.typ"

paper/todo.typ

@@ -17,7 +17,8 @@
       - [x] 准备键，5
       - [x] 画出原子和键，75
       - [x] 调整图片，使得不太杂乱，80
-      - [ ] 合成图片，20
+      - [x] 合成图片，20
+      - [ ] 文字
     - [/] 拉曼实验
       - [x] 仪器设置
         - [x] 中文