test-typst/ref.bib

@@ -316,23 +316,6 @@
 	file = {PDF:/home/chn/Zotero/storage/AXK4NKG7/Asada et al. - 2016 - Hall scattering factors in p-type 4H-SiC with various doping concentrations.pdf:application/pdf},
 }
 
-@article{yan_single-defect_2021,
-	title = {Single-defect phonons imaged by electron microscopy},
-	volume = {589},
-	issn = {0028-0836, 1476-4687},
-	url = {https://www.nature.com/articles/s41586-020-03049-y},
-	doi = {10.1038/s41586-020-03049-y},
-	language = {en},
-	number = {7840},
-	urldate = {2025-06-03},
-	journal = {Nature},
-	author = {Yan, Xingxu and Liu, Chengyan and Gadre, Chaitanya A. and Gu, Lei and Aoki, Toshihiro and Lovejoy, Tracy C. and Dellby, Niklas and Krivanek, Ondrej L. and Schlom, Darrell G. and Wu, Ruqian and Pan, Xiaoqing},
-	month = jan,
-	year = {2021},
-	pages = {65--69},
-	file = {PDF:/home/chn/Zotero/storage/MWI4MNV9/Yan et al. - 2021 - Single-defect phonons imaged by electron microscopy.pdf:application/pdf},
-}
-
 @article{egoavil_atomic_2014,
 	title = {Atomic resolution mapping of phonon excitations in {STEM}-{EELS} experiments},
 	volume = {147},
@@ -478,3 +461,81 @@
 	pages = {1356--1368},
 	file = {PDF:/home/chn/Zotero/storage/7SFXQFGR/Hundhausen et al. - 2008 - Characterization of defects in silicon carbide by Raman spectroscopy.pdf:application/pdf},
 }
+
+@article{song_depth_2020,
+	title = {Depth {Profiling} of {Ion}-{Implanted} {4H}–{SiC} {Using} {Confocal} {Raman} {Spectroscopy}},
+	volume = {10},
+	copyright = {https://creativecommons.org/licenses/by/4.0/},
+	issn = {2073-4352},
+	url = {https://www.mdpi.com/2073-4352/10/2/131},
+	doi = {10.3390/cryst10020131},
+	abstract = {For silicon carbide (SiC) processed by ion-implantation, dedicated test structure fabrication or destructive sample processing on test wafers are usually required to obtain depth profiles of electrical characteristics such as carrier concentration. In this study, a rapid and non-destructive approach for depth profiling is presented that uses confocal Raman microscopy. As an example, a 4H–SiC substrate with an epitaxial layer of several micrometers thick and top layer in nanoscale that was modified by ion-implantation was characterized. From the Raman depth profiling, longitudinal optical (LO) mode from the epitaxial layer and longitudinal optical phonon-plasmon coupled (LOPC) mode from the substrate layer can be sensitively distinguished at the interface. The position profile of the LOPC peak intensity in the depth direction was found to be effective in estimating the thickness of the epitaxial layer. For three kinds of epitaxial layer with thicknesses of 5.3 µm, 6 µm, and 7.5 µm, the average deviations of the Raman depth analysis were −1.7 µm, −1.2 µm, and −1.4 µm, respectively. Moreover, when moving the focal plane from the heavily doped sample ({\textasciitilde}1018 cm−3) to the epitaxial layer ({\textasciitilde}1016 cm−3), the LOPC peak showed a blue shift. The twice travel of the photon (excitation and collection) through the ion-implanted layer with doping concentrations higher than 1 × 1018 cm−3 led to a difference in the LOPC peak position for samples with the same epitaxial layer and substrate layer. Furthermore, the influences of the setup in terms of pinhole size and numerical aperture of objective lens on the depth profiling results were studied. Different from other research on Raman depth profiling, the 50× long working distance objective lens (50L× lens) was found more suitable than the 100× lens for the depth analysis 4H–SiC with a multi-layer structure.},
+	language = {en},
+	number = {2},
+	urldate = {2025-06-04},
+	journal = {Crystals},
+	author = {Song, Ying and Xu, Zongwei and Liu, Tao and Rommel, Mathias and Wang, Hong and Wang, Yufang and Fang, Fengzhou},
+	month = feb,
+	year = {2020},
+	pages = {131},
+	file = {PDF:/home/chn/Zotero/storage/PR6FW4VH/Song et al. - 2020 - Depth Profiling of Ion-Implanted 4H–SiC Using Confocal Raman Spectroscopy.pdf:application/pdf},
+}
+
+@article{harima_raman_1995,
+	title = {Raman scattering from anisotropic {LO}-phonon–plasmon–coupled mode in \textit{n} -type {4H}– and {6H}–{SiC}},
+	volume = {78},
+	issn = {0021-8979, 1089-7550},
+	url = {https://pubs.aip.org/jap/article/78/3/1996/489713/Raman-scattering-from-anisotropic-LO-phonon},
+	doi = {10.1063/1.360174},
+	abstract = {LO-phonon–plasmon–coupled modes in n-type 4H– and 6H–SiC single crystals with free-carrier concentrations of 1016–1018 cm−3 have been measured by Raman scattering at room temperature. The axial-type mode for which plasma oscillation and atomic displacement are parallel to the c axis, and the planar-type mode for which these oscillations lie in the c plane, have been individually observed. From a line-shape analysis of the observed spectra, the plasmon frequency, carrier damping, and phonon damping have been deduced. These quantities have large differences between the axial- and planar-type mode in 6H–SiC, indicating its large crystal anisotropy. On the contrary, 4H–SiC shows small anisotropy. The longitudinal and transverse effective mass components of the electron have been determined from the plasmon frequency using carrier densities derived from Hall measurements. The deduced values are m∥=1.4m0 and m⊥=0.35m0 for 6H–SiC, and m∥=0.48m0 and m⊥=0.30m0 for 4H–SiC. The carrier mobility obtained from the analysis is also anisotropic. This is consistent with reported electrical measurements.},
+	language = {en},
+	number = {3},
+	urldate = {2025-06-22},
+	journal = {Journal of Applied Physics},
+	author = {Harima, Hiroshi and Nakashima, Shin-ichi and Uemura, Tomoki},
+	month = aug,
+	year = {1995},
+	pages = {1996--2005},
+	file = {PDF:/home/chn/Zotero/storage/Y9PU79VE/Harima et al. - 1995 - Raman scattering from anisotropic LO-phonon–plasmon–coupled mode in n -type 4H– and 6H–SiC.pdf:application/pdf},
+}
+
+@article{yan_single-defect_2021,
+	title = {Single-defect phonons imaged by electron microscopy},
+	volume = {589},
+	issn = {0028-0836, 1476-4687},
+	url = {https://www.nature.com/articles/s41586-020-03049-y},
+	doi = {10.1038/s41586-020-03049-y},
+	language = {en},
+	number = {7840},
+	urldate = {2025-06-22},
+	journal = {Nature},
+	author = {Yan, Xingxu and Liu, Chengyan and Gadre, Chaitanya A. and Gu, Lei and Aoki, Toshihiro and Lovejoy, Tracy C. and Dellby, Niklas and Krivanek, Ondrej L. and Schlom, Darrell G. and Wu, Ruqian and Pan, Xiaoqing},
+	month = jan,
+	year = {2021},
+	pages = {65--69},
+	file = {PDF:/home/chn/Zotero/storage/K3PFH67S/Yan et al. - 2021 - Single-defect phonons imaged by electron microscopy.pdf:application/pdf},
+}
+
+@article{_n-sic_2010,
+	title = {n-{SiC拉曼散射光谱的温度特性}},
+	volume = {59},
+	issn = {1000-3290},
+	url = {https://kns.cnki.net/KCMS/detail/detail.aspx?dbcode=CJFQ&dbname=CJFD2010&filename=WLXB201006094},
+	abstract = {测量了采用离子注入法得到掺N的n-SiC晶体从100—450K的拉曼光谱.研究了SiC一级拉曼谱、电子拉曼散射谱及二级拉曼谱的温度效应.实验结果表明,大部分SiC一级拉曼峰会随温度升高向低波数方向移动,但声学模红移(峰值位置向低频方向移动)的幅度较光学模小.重掺杂4H-SiC的纵光学声子等离子体激元耦合(LOPC)模频率随温度升高表现出先蓝移(峰值位置向高频方向移动)后红移的变化趋势,表明LOPC模的温度特性不仅会受到非简谐效应的影响,还与实际已离化杂质浓度有关.电子拉曼散射峰线宽随温度升高而增大,强度随温度升高而减弱,但其峰值位置基本不变.二级拉曼谱的红移不如一级拉曼谱明显,但其峰值强度却随着温度的升高显示出明显下降的趋势.},
+	language = {zh-CN},
+	number = {6},
+	urldate = {2025-06-22},
+	journal = {物理学报},
+	author = {{韩茹} and {樊晓桠} and {杨银堂}},
+	year = {2010},
+	note = {download: 369
+album: 基础科学
+CLC: O473
+dbcode: CJFQ
+dbname: CJFD2010
+filename: WLXB201006094
+CNKICite: 6},
+	keywords = {温度, 电子拉曼散射, 碳化硅, 纵光学声子等离子体激元耦合模},
+	pages = {4261--4266},
+	file = {n-SiC拉曼散射光谱的温度特性:/home/chn/Zotero/storage/M94LRGCT/n-SiC拉曼散射光谱的温度特性.pdf:application/pdf},
+}