542 lines
44 KiB
BibTeX
542 lines
44 KiB
BibTeX
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@article{demenet_tem_2005,
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title = {{TEM} observations of the coexistence of perfect and dissociated dislocations in {SiC} under high stress},
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volume = {2},
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issn = {1610-1634},
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url = {https://onlinelibrary.wiley.com/doi/10.1002/pssc.200460541},
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doi = {10.1002/pssc.200460541},
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language = {en},
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number = {6},
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urldate = {2022-07-04},
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journal = {Physica Status Solidi C: Current Topics in Solid State Physics},
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author = {Demenet, J. L. and Milhet, X. and Rabier, J.},
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month = apr,
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year = {2005},
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pages = {1987--1991},
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file = {Demenet 等。 - 2005 - TEM observations of the coexistence of perfect and.pdf:/home/chn/Zotero/storage/NHRXJKCK/Demenet 等。 - 2005 - TEM observations of the coexistence of perfect and.pdf:application/pdf},
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}
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@article{caldwell_driving_2010,
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title = {On the driving force for recombination-induced stacking fault motion in {4H}-{SiC}},
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volume = {108},
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issn = {0021-8979, 1089-7550},
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url = {http://aip.scitation.org/doi/10.1063/1.3467793},
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doi = {10.1063/1.3467793},
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language = {en},
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number = {4},
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urldate = {2022-09-20},
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journal = {Journal of Applied Physics},
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author = {Caldwell, Joshua D. and Stahlbush, Robert E. and Ancona, Mario G. and Glembocki, Orest J. and Hobart, Karl D.},
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month = aug,
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year = {2010},
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pages = {044503},
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file = {Caldwell 等。 - 2010 - On the driving force for recombination-induced sta.pdf:/home/chn/Zotero/storage/BRT4UJBM/Caldwell 等。 - 2010 - On the driving force for recombination-induced sta.pdf:application/pdf},
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}
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@article{iwahashi_extension_2017,
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title = {Extension of {Stacking} {Faults} in {4H}-{SiC} pn {Diodes} under a {High} {Current} {Pulse} {Stress}},
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volume = {897},
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issn = {1662-9752},
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url = {https://www.scientific.net/MSF.897.218},
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doi = {10.4028/www.scientific.net/MSF.897.218},
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abstract = {We investigated the expansion of stacking faults (SFs) under a high current pulse stress in detail. In situ observations showed bar-shaped SFs and two types of triangle SFs with different nucleation sites. The calculated partial dislocation velocity of the bar-shaped SFs was four times faster than that of the triangle SFs. The temperature dependence of the partial dislocation velocity was used to estimate activation energies of 0.23±0.02 eV for bar-shaped SFs and 0.27±0.05 eV for triangle SFs. We also compared the electrical characteristics before and after the stress. The forward voltage drop slightly increased by 0.05 V, and the leakage current did not increase.},
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language = {en},
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urldate = {2022-09-22},
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journal = {Materials Science Forum},
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author = {Iwahashi, Yohei and Miyazato, Masaki and Miyajima, Masaaki and Yonezawa, Yoshiyuki and Kato, Tomohisa and Fujiwara, Hirokazu and Hamada, Kimimori and Otsuki, Akihiro and Okumura, Hajime},
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month = may,
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year = {2017},
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pages = {218--221},
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file = {Iwahashi 等。 - 2017 - Extension of Stacking Faults in 4H-SiC pn Diodes u.pdf:/home/chn/Zotero/storage/8N5CPXAY/Iwahashi 等。 - 2017 - Extension of Stacking Faults in 4H-SiC pn Diodes u.pdf:application/pdf},
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}
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@article{okada_dependences_2018,
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title = {Dependences of contraction/expansion of stacking faults on temperature and current density in {4H}-{SiC} p-i-n diodes},
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volume = {57},
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issn = {0021-4922, 1347-4065},
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url = {https://iopscience.iop.org/article/10.7567/JJAP.57.061301},
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doi = {10.7567/JJAP.57.061301},
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language = {en},
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number = {6},
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urldate = {2022-09-22},
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journal = {Japanese Journal of Applied Physics},
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author = {Okada, Aoi and Nishio, Johji and Iijima, Ryosuke and Ota, Chiharu and Goryu, Akihiro and Miyazato, Masaki and Ryo, Mina and Shinohe, Takashi and Miyajima, Masaaki and Kato, Tomohisa and Yonezawa, Yoshiyuki and Okumura, Hajime},
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month = jun,
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year = {2018},
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pages = {061301},
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file = {Okada 等。 - 2018 - Dependences of contractionexpansion of stacking f.pdf:/home/chn/Zotero/storage/ZDPSUFFI/Okada 等。 - 2018 - Dependences of contractionexpansion of stacking f.pdf:application/pdf},
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}
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@article{iijima_correlation_2017,
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title = {Correlation between shapes of {Shockley} stacking faults and structures of basal plane dislocations in {4H}-{SiC} epilayers},
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volume = {97},
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issn = {1478-6435, 1478-6443},
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url = {https://www.tandfonline.com/doi/full/10.1080/14786435.2017.1350788},
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doi = {10.1080/14786435.2017.1350788},
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abstract = {Shockley-type stacking faults expanded in 4H–SiC epilayers induced by ultraviolet illumination were investigated using a photoluminescence imaging method, a photoluminescence mapping method and X-ray topography. After ultraviolet illumination, more than 30 patterns of Shockley-type stacking faults which expanded from perfect basal plane dislocations were observed by photoluminescence imaging. The initial basal plane dislocations were crystallographically classified, and individual shapes of expanded Shockley-type stacking faults were predicted. The correspondence between the predicted shapes and observed ones was discussed.},
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language = {en},
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number = {30},
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urldate = {2022-09-24},
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journal = {Philosophical Magazine},
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author = {Iijima, Akifumi and Kamata, Isaho and Tsuchida, Hidekazu and Suda, Jun and Kimoto, Tsunenobu},
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month = oct,
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year = {2017},
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pages = {2736--2752},
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file = {Iijima 等。 - 2017 - Correlation between shapes of Shockley stacking fa.pdf:/home/chn/Zotero/storage/2G3ZSIAB/Iijima 等。 - 2017 - Correlation between shapes of Shockley stacking fa.pdf:application/pdf},
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}
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@article{mahadik_ultraviolet_2012,
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title = {Ultraviolet {Photoluminescence} {Imaging} of {Stacking} {Fault} {Contraction} in {4H}-{SiC} {Epitaxial} {Layers}},
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volume = {717-720},
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issn = {1662-9752},
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url = {https://www.scientific.net/MSF.717-720.391},
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doi = {10.4028/www.scientific.net/MSF.717-720.391},
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abstract = {Shockley stacking fault (SSF) contraction in 4H-SiC was investigated, in-situ, under varying temperature and ultraviolet (UV) intensity. Contraction of single SSFs at room temperature was observed for the first time under low power UV excitation of 0.04 W/cm2. At temperatures above 150 oC, complete SSF contraction occurred for UV power at 0.2 W/cm2. In contrast to expansion, SSF contraction occurred in discrete jumps between pinning sites along existing C-core partials. Luminescence from the pinning sites suggest they may be local concentrations of point defects. Additionally, a change in the line direction of the Si-core partials by {\textasciitilde}25o off the {\textless}112¯ 0{\textgreater} direction was observed.},
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language = {en},
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urldate = {2022-09-24},
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journal = {Materials Science Forum},
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author = {Mahadik, Nadeemullah A. and Stahlbush, Robert E. and Caldwell, Joshua D. and Hobart, Karl D.},
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month = may,
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year = {2012},
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pages = {391--394},
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file = {Mahadik 等。 - 2012 - Ultraviolet Photoluminescence Imaging of Stacking .pdf:/home/chn/Zotero/storage/MYMBL92A/Mahadik 等。 - 2012 - Ultraviolet Photoluminescence Imaging of Stacking .pdf:application/pdf},
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}
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@article{miyanagi_annealing_2006,
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title = {Annealing effects on single {Shockley} faults in {4H}-{SiC}},
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volume = {89},
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issn = {0003-6951, 1077-3118},
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url = {http://aip.scitation.org/doi/10.1063/1.2234740},
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doi = {10.1063/1.2234740},
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language = {en},
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number = {6},
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urldate = {2022-09-24},
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journal = {Applied Physics Letters},
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author = {Miyanagi, Toshiyuki and Tsuchida, Hidekazu and Kamata, Isaho and Nakamura, Tomonori and Nakayama, Koji and Ishii, Ryousuke and Sugawara, Yoshitaka},
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month = aug,
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year = {2006},
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pages = {062104},
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file = {Miyanagi 等。 - 2006 - Annealing effects on single Shockley faults in 4H-.pdf:/home/chn/Zotero/storage/33N8FRKW/Miyanagi 等。 - 2006 - Annealing effects on single Shockley faults in 4H-.pdf:application/pdf},
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}
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@article{nishio_triangular_2020,
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title = {Triangular {Single} {Shockley} {Stacking} {Fault} {Analyses} on {4H}-{SiC} {PiN} {Diode} with {Forward} {Voltage} {Degradation}},
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volume = {49},
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issn = {0361-5235, 1543-186X},
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url = {https://link.springer.com/10.1007/s11664-020-08133-7},
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doi = {10.1007/s11664-020-08133-7},
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language = {en},
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number = {9},
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urldate = {2022-09-24},
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journal = {Journal of Electronic Materials},
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author = {Nishio, Johji and Okada, Aoi and Ota, Chiharu and Kushibe, Mitsuhiro},
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month = sep,
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year = {2020},
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pages = {5232--5239},
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file = {Nishio 等。 - 2020 - Triangular Single Shockley Stacking Fault Analyses.pdf:/home/chn/Zotero/storage/SPG9HXBM/Nishio 等。 - 2020 - Triangular Single Shockley Stacking Fault Analyses.pdf:application/pdf},
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}
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@article{okumura_present_2006,
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title = {Present {Status} and {Future} {Prospect} of {Widegap} {Semiconductor} {High}-{Power} {Devices}},
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volume = {45},
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issn = {0021-4922, 1347-4065},
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doi = {10.1143/JJAP.45.7565},
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language = {en},
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number = {10A},
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urldate = {2022-09-27},
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journal = {Japanese Journal of Applied Physics},
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author = {Okumura, Hajime},
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month = oct,
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year = {2006},
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pages = {7565--7586},
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file = {Okumura - 2006 - Present Status and Future Prospect of Widegap Semi.pdf:/home/chn/Zotero/storage/T26XT9I6/Okumura - 2006 - Present Status and Future Prospect of Widegap Semi.pdf:application/pdf},
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}
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@article{casady_status_1996,
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title = {Status of {Silicon} {Carbide} ({SiC}) as a {Wide}-bandgap {Emiconductor} for {High}-temperature {Applications}: a {Review}},
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volume = {39},
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doi = {10.1016/0038-1101(96)00045-7},
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language = {en},
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number = {10},
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journal = {Solid-State Electronics},
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author = {Casady, J B and Johnson, R W},
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month = feb,
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year = {1996},
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pages = {1409--1422},
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file = {Casady 和 Johnson - STATUS OF SILICON CARBIDE (SIC) AS A WlDE-BANDGAP .pdf:/home/chn/Zotero/storage/9UE6AB28/Casady 和 Johnson - STATUS OF SILICON CARBIDE (SIC) AS A WlDE-BANDGAP .pdf:application/pdf},
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}
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@article{tsuchida_recent_2018,
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title = {Recent advances in {4H}-{SiC} epitaxy for high-voltage power devices},
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volume = {78},
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issn = {13698001},
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doi = {10.1016/j.mssp.2017.11.003},
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abstract = {This paper reports recent advances in high-quality 4H-SiC epitaxial growth. The modern 4H-SiC epitaxial reactors, techniques to improve growth rates and large-diameter uniformity and reduce defect densities are discussed. A single-wafer vertical-type epitaxial reactor is newly developed and employed to grow 150 mm-diameter 4H-SiC epilayers. Using the reactor, high-speed wafer rotation is confirmed effective, both for enhancing growth rates and improving thickness and doping uniformities. Current levels of reducing particle-induced defects, in-grown stacking faults and basal plane dislocations and controlling carrier lifetimes are also reviewed.},
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language = {en},
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urldate = {2022-10-06},
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journal = {Materials Science in Semiconductor Processing},
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author = {Tsuchida, Hidekazu and Kamata, Isaho and Miyazawa, Tetsuya and Ito, Masahiko and Zhang, Xuan and Nagano, Masahiro},
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month = may,
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year = {2018},
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pages = {2--12},
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file = {Tsuchida 等。 - 2018 - Recent advances in 4H-SiC epitaxy for high-voltage.pdf:/home/chn/Zotero/storage/S596D8SX/Tsuchida 等。 - 2018 - Recent advances in 4H-SiC epitaxy for high-voltage.pdf:application/pdf},
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}
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@article{sun_selection_2022,
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title = {Selection of growth monomers on the {4H}-{SiC} (0001) atomic step surfaces: from the first-principles calculations to homo-epitaxy verification},
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volume = {606},
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issn = {01694332},
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shorttitle = {Selection of growth monomers on the {4H}-{SiC} (0001) atomic step surfaces},
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url = {https://linkinghub.elsevier.com/retrieve/pii/S0169433222024771},
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doi = {10.1016/j.apsusc.2022.154949},
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abstract = {Silicon carbide (SiC) has gained increased interest due to industry demand, especially for the 4H-SiC. Never theless, the ‘structural mutation’ in the 4H-SiC epitaxy is in urgent need of investigation and proper solution as the epitaxial thickness/wafer size increases. In this study, growth monomers in the step-flow mode were firstly investigated by the first-principles calculations for their dynamic and kinetic behaviours from an atomic level. The stability (by the comprehensive analyses of total energies, chemical potentials, and formation enthalpies) and the location of adsorptions were studied to reveal the dynamics. Meanwhile, the potential barrier of Si-Si interaction and phonon spectra were determined to understand the kinetics. We found monomers could be selected by controlling chemical potentials to make ordering growth. Secondly, two methods were thus inferred to select monomers to adsorb on atomic step surfaces in an orderly fashion and were verified in a six-inch epitaxy. Thirdly, a protocol was designed to restrict the extension of basal plane dislocation (BPD) from sub strates, a reduction greater than five orders of magnitude was gained but without time compromise in the thickfilm epitaxy. This study provided new insights into growth on the 4H-SiC (0001) atomic step surfaces and a new way of 4H-SiC homo-epitaxy.},
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language = {en},
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urldate = {2022-10-06},
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journal = {Applied Surface Science},
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author = {Sun, Yongqiang and Kang, Wenyu and Chen, Haonan and Chen, Xinlu and Dong, Yue and Lin, Wei and Kang, Junyong},
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month = dec,
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year = {2022},
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pages = {154949},
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file = {Sun et al. - 2022 - Selection of growth monomers on the 4H-SiC (0001) .pdf:/home/chn/Zotero/storage/VTGL4G53/Sun et al. - 2022 - Selection of growth monomers on the 4H-SiC (0001) .pdf:application/pdf},
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}
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@article{harada_suppression_2022,
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title = {Suppression of stacking fault expansion in a {4H}-{SiC} epitaxial layer by proton irradiation},
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volume = {12},
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issn = {2045-2322},
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doi = {10.1038/s41598-022-17060-y},
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abstract = {SiC bipolar degradation, which is caused by stacking fault expansion from basal plane dislocations in a SiC epitaxial layer or near the interface between the epitaxial layer and the substrate, is one of the critical problems inhibiting widespread usage of high-voltage SiC bipolar devices. In the present study, we investigated the stacking fault expansion behavior under UV illumination in a 4H-SiC epitaxial layer subjected to proton irradiation. X-ray topography observations revealed that proton irradiation suppressed stacking fault expansion. Excess carrier lifetime measurements showed that stacking fault expansion was suppressed in 4H-SiC epitaxial layers with proton irradiation at a fluence of 1 × 1011cm−2without evident reduction of the excess carrier lifetime. Furthermore, stacking fault expansion was also suppressed even after high-temperature annealing to recover the excess carrier lifetime. These results implied that passivation of dislocation cores by protons hinders recombination-enhanced dislocation glide motion under UV illumination.},
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language = {en},
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number = {1},
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urldate = {2022-10-06},
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journal = {Scientific Reports},
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author = {Harada, Shunta and Mii, Toshiki and Sakane, Hitoshi and Kato, Masashi},
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month = aug,
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year = {2022},
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pages = {13542},
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file = {Harada et al. - 2022 - Suppression of stacking fault expansion in a 4H-Si.pdf:/home/chn/Zotero/storage/VJ7H4G59/Harada et al. - 2022 - Suppression of stacking fault expansion in a 4H-Si.pdf:application/pdf},
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}
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@article{harada_observation_2022,
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title = {Observation of in-plane shear stress fields in off-axis {SiC} wafers by birefringence imaging},
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volume = {55},
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issn = {1600-5767},
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url = {https://scripts.iucr.org/cgi-bin/paper?S1600576722006483},
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doi = {10.1107/S1600576722006483},
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abstract = {For the nondestructive characterization of SiC wafers for power device application, birefringence imaging is one of the promising methods. In the present study, it is demonstrated that birefringence image contrast variation in off-axis SiC wafers corresponds to the in-plane shear stress under conditions slightly deviating from crossed Nicols according to both theoretical consideration and experimental observation. The current results indicate that the characterization of defects in SiC wafers is possible to achieve by birefringence imaging.},
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language = {en},
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number = {4},
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urldate = {2023-06-14},
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journal = {Journal of Applied Crystallography},
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author = {Harada, Shunta and Murayama, Kenta},
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month = aug,
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year = {2022},
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pages = {1029--1032},
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file = {Harada and Murayama - 2022 - Observation of in-plane shear stress fields in off.pdf:/home/chn/Zotero/storage/X6LVEJRU/Harada and Murayama - 2022 - Observation of in-plane shear stress fields in off.pdf:application/pdf},
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}
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@article{kudriavtsev_quantitative_2003,
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title = {Quantitative {SIMS} analysis of {SiC}},
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volume = {35},
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copyright = {http://onlinelibrary.wiley.com/termsAndConditions\#vor},
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issn = {0142-2421, 1096-9918},
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url = {https://analyticalsciencejournals.onlinelibrary.wiley.com/doi/10.1002/sia.1561},
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doi = {10.1002/sia.1561},
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abstract = {Abstract
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We performed a systematic study of ion‐implanted 6H‐SiC standards to find the optimal regimes for SIMS analysis. Relative sensitivity factors (RSFs) were acquired for operating conditions typical of practical SIMS applications. The experimental SiC RSFs were compared with those found for silicon:
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1
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the matrix effect was insignificant in most cases. It was found that the SiO
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−
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cluster ion cannot represent correctly the real oxygen distribution in SiC. The physics of the effect is discussed. Copyright © 2003 John Wiley \& Sons, Ltd.},
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language = {en},
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number = {6},
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urldate = {2025-06-03},
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journal = {Surface and Interface Analysis},
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author = {Kudriavtsev, Yu. and Villegas, A. and Godines, A. and Asomoza, R. and Usov, I.},
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month = jun,
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year = {2003},
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pages = {491--495},
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file = {PDF:/home/chn/Zotero/storage/GNZIFH2D/Kudriavtsev et al. - 2003 - Quantitative SIMS analysis of SiC.pdf:application/pdf},
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}
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@article{kim_characteristics_2024,
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title = {Characteristics of the {Discoloration} {Switching} {Phenomenon} of {4H}-{SiC} {Single} {Crystals} {Grown} by {PVT} {Method} {Using} {ToF}-{SIMS} and {Micro}-{Raman} {Analysis}},
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volume = {17},
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copyright = {https://creativecommons.org/licenses/by/4.0/},
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issn = {1996-1944},
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url = {https://www.mdpi.com/1996-1944/17/5/1005},
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doi = {10.3390/ma17051005},
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abstract = {The discoloration switching appearing in the initial and final growth stages of 4H-silicon carbide (4H-SiC) single crystals grown using the physical vapor transport (PVT) technique was investigated. This phenomenon was studied, investigating the correlation with linear-type micropipe defects on the surface of 4H-SiC single crystals. Based on the experimental results obtained using time-of-flight secondary ion mass spectrometry (ToF-SIMS) and micro-Raman analysis, it was deduced that the orientation of the 4H-SiC c-axis causes an axial change that correlates with low levels of carbon. In addition, it was confirmed that the incorporation of additional elements and the concentrations of these doped impurity elements were the main causes of discoloration and changes in growth orientation. Overall, this work provides guidelines for evaluating the discoloration switching in 4H-SiC single crystals and contributes to a greater understanding of this phenomenon.},
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language = {en},
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number = {5},
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urldate = {2025-06-03},
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journal = {Materials},
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author = {Kim, Seul-Ki and Kim, Hajun and Kim, Hyun Sik and Hong, Tae Eun and Lee, Younki and Jung, Eun Young},
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month = feb,
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year = {2024},
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pages = {1005},
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file = {PDF:/home/chn/Zotero/storage/JXDKH48U/Kim et al. - 2024 - Characteristics of the Discoloration Switching Phenomenon of 4H-SiC Single Crystals Grown by PVT Met.pdf:application/pdf},
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}
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@article{noguchi_comparative_2021,
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title = {Comparative {Study} of {Hall} {Effect} {Mobility} in {Inversion} {Layer} of {4H}-{SiC} {MOSFETs} {With} {Nitrided} and {Phosphorus}-{Doped} {Gate} {Oxides}},
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volume = {68},
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copyright = {https://ieeexplore.ieee.org/Xplorehelp/downloads/license-information/IEEE.html},
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issn = {0018-9383, 1557-9646},
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url = {https://ieeexplore.ieee.org/document/9632361/},
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doi = {10.1109/TED.2021.3125284},
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abstract = {In this study, the inversion layer mobility characteristics in Si-face 4H silicon carbide (SiC) metaloxide-semiconductor field-effect transistors (MOSFETs) with nitrided and phosphorus-doped gate oxides were compared using Hall effect measurements. The inversion layer mobility was evaluated by applying a body bias and changing the temperature. The carrier scattering properties were determined for elevated temperatures (i.e., 473 K), at which point the impact of Coulomb scattering decreases and that of phonon scattering increases. The phonon-limited mobility of these MOSFETs was almost the same when plotted as a function of the effective normal electric field in the inversion layer, possibly representing the nature of the thermally grown SiO2/SiC interface. On the basis of this finding, the effect of phonon scattering was separated from the inversion layer mobility. The MOSFETs exhibited a remarkable difference in Coulomb scattering: the MOSFETs with phosphorus-doped gate oxide exhibited a more rapid increase in Coulomb-limited mobility with increasing surface carrier density than did the MOSFETs with nitride gate oxide. This resulted from the effective suppression of Coulomb scattering in the inversion layer, which is one of the reasons why phosphorus-doped gate oxide achieves higher inversion layer mobility than nitrided gate oxide. These results show that the inversion layer mobility of SiC MOSFETs can be modeled using a conventional framework of phonon, Coulomb, and surface roughness scattering. Therefore, the suppression of Coulomb scattering is key to further improving the inversion layer mobility of SiC MOSFETs.},
|
||
language = {en},
|
||
number = {12},
|
||
urldate = {2025-06-03},
|
||
journal = {IEEE Transactions on Electron Devices},
|
||
author = {Noguchi, Munetaka and Watanabe, Tomokatsu and Watanabe, Hiroshi and Kita, Koji and Miura, Naruhisa},
|
||
month = dec,
|
||
year = {2021},
|
||
pages = {6321--6329},
|
||
file = {PDF:/home/chn/Zotero/storage/WGL6FA4D/Noguchi et al. - 2021 - Comparative Study of Hall Effect Mobility in Inversion Layer of 4H-SiC MOSFETs With Nitrided and Pho.pdf:application/pdf},
|
||
}
|
||
|
||
@article{asada_hall_2016,
|
||
title = {Hall scattering factors in p-type {4H}-{SiC} with various doping concentrations},
|
||
volume = {9},
|
||
issn = {1882-0778, 1882-0786},
|
||
url = {https://iopscience.iop.org/article/10.7567/APEX.9.041301},
|
||
doi = {10.7567/APEX.9.041301},
|
||
abstract = {Abstract The Hall scattering factor (γ H ) in p-type 4H-SiC with various aluminum doping concentrations of 5.8 × 10 14 –7.1 × 10 18 cm −3 was investigated from 300 to 900 K. γ H was determined by comparing the Hall coefficient with the theoretical carrier concentration derived from acceptor and donor concentrations obtained from secondary ion mass spectrometry and capacitance–voltage measurements. γ H decreased with increasing temperature or doping concentration; γ H = 1–0.4 for the doping concentration of 5.8 × 10 14 cm −3 and γ H = 0.5–0.2 for the doping concentration of 7.1 × 10 18 cm −3 . The dependence might be caused by the anisotropic and nonparabolic valence band structure of 4H-SiC.},
|
||
language = {en},
|
||
number = {4},
|
||
urldate = {2025-06-03},
|
||
journal = {Applied Physics Express},
|
||
author = {Asada, Satoshi and Okuda, Takafumi and Kimoto, Tsunenobu and Suda, Jun},
|
||
month = apr,
|
||
year = {2016},
|
||
pages = {041301},
|
||
file = {PDF:/home/chn/Zotero/storage/AXK4NKG7/Asada et al. - 2016 - Hall scattering factors in p-type 4H-SiC with various doping concentrations.pdf:application/pdf},
|
||
}
|
||
|
||
@article{egoavil_atomic_2014,
|
||
title = {Atomic resolution mapping of phonon excitations in {STEM}-{EELS} experiments},
|
||
volume = {147},
|
||
issn = {03043991},
|
||
url = {https://linkinghub.elsevier.com/retrieve/pii/S0304399114000904},
|
||
doi = {10.1016/j.ultramic.2014.04.011},
|
||
abstract = {Atomically resolved electron energy-loss spectroscopy experiments are commonplace in modern aberration-corrected transmission electron microscopes. Energy resolution has also been increasing steadily with the continuous improvement of electron monochromators. Electronic excitations however are known to be delocalized due to the long range interaction of the charged accelerated electrons with the electrons in a sample. This has made several scientists question the value of combined high spatial and energy resolution for mapping interband transitions and possibly phonon excitation in crystals. In this paper we demonstrate experimentally that atomic resolution information is indeed available at very low energy losses around 100 meV expressed as a modulation of the broadening of the zero loss peak. Careful data analysis allows us to get a glimpse of what are likely phonon excitations with both an energy loss and gain part. These experiments confirm recent theoretical predictions on the strong localization of phonon excitations as opposed to electronic excitations and show that a combination of atomic resolution and recent developments in increased energy resolution will offer great benefit for mapping phonon modes in real space.},
|
||
language = {en},
|
||
urldate = {2025-06-03},
|
||
journal = {Ultramicroscopy},
|
||
author = {Egoavil, R. and Gauquelin, N. and Martinez, G.T. and Van Aert, S. and Van Tendeloo, G. and Verbeeck, J.},
|
||
month = dec,
|
||
year = {2014},
|
||
pages = {1--7},
|
||
file = {PDF:/home/chn/Zotero/storage/5YTDSVNA/Egoavil et al. - 2014 - Atomic resolution mapping of phonon excitations in STEM-EELS experiments.pdf:application/pdf},
|
||
}
|
||
|
||
@article{tong_temperature-dependent_2018,
|
||
title = {Temperature-dependent infrared optical properties of {3C}-, {4H}- and {6H}-{SiC}},
|
||
volume = {537},
|
||
issn = {09214526},
|
||
url = {https://linkinghub.elsevier.com/retrieve/pii/S092145261830142X},
|
||
doi = {10.1016/j.physb.2018.02.023},
|
||
abstract = {The temperature-dependent optical properties of cubic (3C) and hexagonal (4H and 6H) silicon carbide are investigated in the infrared range of 2–16 μm both by experimental measurements and numerical simulations. The temperature in experimental measurement is up to 593 K, while the numerical method can predict the optical properties at elevated temperatures. To investigate the temperature effect, the temperature-dependent damping parameter in the Lorentz model is calculated based on anharmonic lattice dynamics method, in which the harmonic and anharmonic interatomic force constants are determined from first-principles calculations. The infrared phonon modes of silicon carbide are determined from first-principles calculations. Based on first-principles calculations, the Lorentz model is parameterized without any experimental fitting data and the temperature effect is considered. In our investigations, we find that the increasing temperature induces a small reduction of the reflectivity in the range of 10–13 μm. More importantly, it also shows that our first-principles calculations can predict the infrared optical properties at high-temperature effectively which is not easy to be obtained through experimental measurements.},
|
||
language = {en},
|
||
urldate = {2025-06-03},
|
||
journal = {Physica B: Condensed Matter},
|
||
author = {Tong, Zhen and Liu, Linhua and Li, Liangsheng and Bao, Hua},
|
||
month = may,
|
||
year = {2018},
|
||
pages = {194--201},
|
||
file = {PDF:/home/chn/Zotero/storage/RISQQUQJ/Tong et al. - 2018 - Temperature-dependent infrared optical properties of 3C-, 4H- and 6H-SiC.pdf:application/pdf},
|
||
}
|
||
|
||
@article{pluchery_infrared_2012,
|
||
title = {Infrared spectroscopy characterization of {3C}–{SiC} epitaxial layers on silicon},
|
||
volume = {45},
|
||
issn = {0022-3727, 1361-6463},
|
||
url = {https://iopscience.iop.org/article/10.1088/0022-3727/45/49/495101},
|
||
doi = {10.1088/0022-3727/45/49/495101},
|
||
abstract = {We have measured the transmission Fourier transform infrared spectra of cubic silicon carbide (3C–SiC polytype) epitaxial layer with a 20 µm thickness on a 200 µm thick silicon substrate. Spectra were recorded in the 400–4000 cm−1 wavenumber range. A novel approach of IR spectra computations based on the recursion capability of the C programming language is presented on the basis of polarized light propagation in layered media using generalized Fresnel’s equations. The complex refractive indices are the only input parameters. A remarkable agreement is found between all of the experimental SiC and Si spectral features and the calculated spectra. A comprehensive assignment of (i) the two fundamental transverse optical (TO) (790 cm−1) and longitudinal optical (LO) (970 cm−1) phonon modes of 3C–SiC, (ii) with their overtones (1522–1627 cm−1) and (iii) the two-phonon optical-acoustical summation bands (1311–1409 cm−1) is achieved on the basis of available literature data. This approach allows sorting out the respective contributions of the Si substrate and SiC upper layer. Such calculations can be applied to any medium, provided that the complex refractive index data are known.},
|
||
language = {en},
|
||
number = {49},
|
||
urldate = {2025-06-03},
|
||
journal = {Journal of Physics D: Applied Physics},
|
||
author = {Pluchery, Olivier and Costantini, Jean-Marc},
|
||
month = dec,
|
||
year = {2012},
|
||
pages = {495101},
|
||
file = {PDF:/home/chn/Zotero/storage/MV3Y48T4/Pluchery and Costantini - 2012 - Infrared spectroscopy characterization of 3C–SiC epitaxial layers on silicon.pdf:application/pdf},
|
||
}
|
||
|
||
@article{feldman_phonon_1968,
|
||
title = {Phonon {Dispersion} {Curves} by {Raman} {Scattering} in {SiC}, {Polytypes} 3 {C} , 4 {H} , 6 {H} , 1 5 {R} , and 2 1 {R}},
|
||
volume = {173},
|
||
copyright = {http://link.aps.org/licenses/aps-default-license},
|
||
issn = {0031-899X},
|
||
url = {https://link.aps.org/doi/10.1103/PhysRev.173.787},
|
||
doi = {10.1103/PhysRev.173.787},
|
||
language = {en},
|
||
number = {3},
|
||
urldate = {2025-06-03},
|
||
journal = {Physical Review},
|
||
author = {Feldman, D. W. and Parker, James H. and Choyke, W. J. and Patrick, Lyle},
|
||
month = sep,
|
||
year = {1968},
|
||
pages = {787--793},
|
||
file = {PDF:/home/chn/Zotero/storage/AYLRJSTD/Feldman et al. - 1968 - Phonon Dispersion Curves by Raman Scattering in SiC, Polytypes 3 C , 4 H , 6 H , 1 5 R , and 2 1 R.pdf:application/pdf},
|
||
}
|
||
|
||
@article{nakashima_raman_2013,
|
||
title = {Raman intensity profiles of zone-folded modes in {SiC}: {Identification} of stacking sequence of {10H}-{SiC}},
|
||
volume = {114},
|
||
issn = {0021-8979, 1089-7550},
|
||
shorttitle = {Raman intensity profiles of zone-folded modes in {SiC}},
|
||
url = {https://pubs.aip.org/jap/article/114/19/193510/992087/Raman-intensity-profiles-of-zone-folded-modes-in},
|
||
doi = {10.1063/1.4828996},
|
||
abstract = {Raman intensity profiles are measured for 10H-SiC crystals, for which various zone-folded phonon modes are observed. Raman intensity profiles are calculated based on a bond polarizability model assuming several stacking sequences for the 10H polytype using a linear chain model. Among several candidates for the stacking sequences, the 3322 stacking structure provides the best-fit profile for experimental spectral profiles. The hexagonality value of 0.4 predicted from the stacking sequence of this polytype is consistent with that derived from the frequency splitting between the experimental A1 and E-type transverse optical modes. This fact is consistent with an empirical rule that the value of the reduced wavevector for the strongest folded transverse acoustic and optical modes are equal to the hexagonality of the polytype. In the present analysis of the Raman intensity profiles, the calculated intensity profiles for specified folded transverse optical modes are found to be relatively strong and strikingly dependent on force-field parameters in α-SiC that consists of the mixture of the cubic and hexagonal stacking structures. These force-field parameters can reproduce well the experimental Raman intensity profiles of various SiC polytypes including 10H-SiC.},
|
||
language = {en},
|
||
number = {19},
|
||
urldate = {2025-06-03},
|
||
journal = {Journal of Applied Physics},
|
||
author = {Nakashima, S. and Tomita, T. and Kuwahara, N. and Mitani, T. and Tomobe, M. and Nishizawa, S. and Okumura, H.},
|
||
month = nov,
|
||
year = {2013},
|
||
pages = {193510},
|
||
file = {PDF:/home/chn/Zotero/storage/PAGC4NNX/Nakashima et al. - 2013 - Raman intensity profiles of zone-folded modes in SiC Identification of stacking sequence of 10H-SiC.pdf:application/pdf},
|
||
}
|
||
|
||
@article{guo_characterization_2012,
|
||
title = {Characterization of {Polytype} {Distributions} in {Nitrogen}-doped {6H}-{SiC} {Single} {Crystal} by {Raman} {Mapping}: {Characterization} of {Polytype} {Distributions} in {Nitrogen}-doped {6H}-{SiC} {Single} {Crystal} by {Raman} {Mapping}},
|
||
volume = {27},
|
||
issn = {1000-324X},
|
||
shorttitle = {Characterization of {Polytype} {Distributions} in {Nitrogen}-doped {6H}-{SiC} {Single} {Crystal} by {Raman} {Mapping}},
|
||
url = {http://pub.chinasciencejournal.com/article/getArticleRedirect.action?doiCode=10.3724/SP.J.1077.2012.00609},
|
||
doi = {10.3724/SP.J.1077.2012.00609},
|
||
abstract = {Nitrogen-doped 6H-SiC crystal with the diameter of 2-inch was grown along [0001] direction by physical vapor transport method. The spatial distribution of different polytypes such as 6H-SiC, 4H-SiC and 15R-SiC was characterized by mapping Raman spectra. The formation and evolution of different polytypes were investigated during the growth progress. 15R-SiC and 4H-SiC were observed in the as-grown 6H-SiC single crystal. Two different polytype regions are observed from the spatial distribution of different polytypes. One region originates from the growth interface of different polytypes. This region has higher nitrogen doping level and carrier concentration, and the area can become large during the growth process. The other region is dominated by 15R-SiC which appears in the main 6H-SiC due to the perturbation in growth temperature, pressure, etc. This region has less effect on the crystal quality, which could be inhibited by increasing the growth temperature.},
|
||
language = {zh},
|
||
number = {6},
|
||
urldate = {2025-06-03},
|
||
journal = {Journal of Inorganic Materials},
|
||
author = {Guo, Xiao and Liu, Xue-Chao and Xin, Jun and Yang, Jian-Hua and Shi, Er-Wei},
|
||
month = aug,
|
||
year = {2012},
|
||
pages = {609--614},
|
||
file = {PDF:/home/chn/Zotero/storage/UD55XBUQ/Guo et al. - 2012 - Characterization of Polytype Distributions in Nitrogen-doped 6H-SiC Single Crystal by Raman Mapping.pdf:application/pdf},
|
||
}
|
||
|
||
@inproceedings{yan_study_2016,
|
||
address = {Beijing},
|
||
title = {Study of morphology defects in {4H}-{SiC} thick epitaxial layers grown on 4° off-axis {Si}-face substrates},
|
||
isbn = {978-1-5090-4613-3},
|
||
url = {https://ieeexplore.ieee.org/document/7803743/},
|
||
doi = {10.1109/IFWS.2016.7803743},
|
||
abstract = {The crystallographic structure and origins of morphology defects observed in 4°off-axis Si-face thick 4H-SiC epitaxial layers were investigated by Nomarski microscope and Raman spectroscopy. The growth direction of these morphology defects is consistent with the step-flow direction, all of the defect include a certain core, which indicates that the defects were originated from certain cores. These cores of the morphology defects contain 3C poly-crystalline grains based on the Raman spectroscopy characterization. The head part of the defect formed during epitaxial layers growth and their formation is attributed to the foreign particles. The formation mechanisms of these obtuse morphology defects are discussed based on our model. It can be concluded that foreign particles fall down on the surface during the 4H-SiC epitaxy that disturb the normal step flow mode and lead to the 3C-SiC nucleation, which is the origination of the morphology defects.},
|
||
language = {en},
|
||
urldate = {2025-06-03},
|
||
booktitle = {2016 13th {China} {International} {Forum} on {Solid} {State} {Lighting}: {International} {Forum} on {Wide} {Bandgap} {Semiconductors} {China} ({SSLChina}: {IFWS})},
|
||
publisher = {IEEE},
|
||
author = {Yan, Guoguo and Zhang, Feng and Liu, Xingfang and Wang, Lei and Zhao, Wanshun and Sun, Guosheng and Zeng Key, Yiping},
|
||
month = nov,
|
||
year = {2016},
|
||
pages = {6--10},
|
||
file = {PDF:/home/chn/Zotero/storage/82RJ3M4G/Yan et al. - 2016 - Study of morphology defects in 4H-SiC thick epitaxial layers grown on 4° off-axis Si-face substrates.pdf:application/pdf},
|
||
}
|
||
|
||
@article{hundhausen_characterization_2008,
|
||
title = {Characterization of defects in silicon carbide by {Raman} spectroscopy},
|
||
volume = {245},
|
||
copyright = {http://onlinelibrary.wiley.com/termsAndConditions\#vor},
|
||
issn = {0370-1972, 1521-3951},
|
||
url = {https://onlinelibrary.wiley.com/doi/10.1002/pssb.200844052},
|
||
doi = {10.1002/pssb.200844052},
|
||
abstract = {Abstract
|
||
We demonstrate the application of Raman spectroscopy as an optical non‐contact method for the characterization of silicon carbide (SiC). The Raman spectra provide information about the polytype and thus can give direct information about microscopic inclusions of hexagonal polytypes in 3C‐SiC grown by chemical vapor deposition (CVD) after annealing at elevated temperatures. Polytype conversion sets in at a about 1700 °C and at higher temperatures eventually results in larger domains of 6H‐SiC where twin boundaries act as barriers against a complete polytype conversion. We study shallow donor states of phosphorus‐ and nitrogen‐doped SiC using low temperature electronic Raman spectroscopy. The various low frequency transitions observed in nitrogen doped SiC are assigned to the valley‐orbit transitions of electrons in the 1s‐ground states of donors that occupy inequivalent lattice sites. During vacuum annealing at elevated temperature graphitization of the SiC surface occurs. Raman spectroscopy is used to verify that under well controlled conditions a monoatomic graphene layer exists. We observe a phonon hardening of that layer compared to free standing graphene that we ascribe mainly to strain induced by different thermal expansion coefficients of graphite and SiC. (© 2008 WILEY‐VCH Verlag GmbH \& Co. KGaA, Weinheim)},
|
||
language = {en},
|
||
number = {7},
|
||
urldate = {2025-06-03},
|
||
journal = {physica status solidi (b)},
|
||
author = {Hundhausen, M. and Püsche, R. and Röhrl, J. and Ley, L.},
|
||
month = jul,
|
||
year = {2008},
|
||
pages = {1356--1368},
|
||
file = {PDF:/home/chn/Zotero/storage/7SFXQFGR/Hundhausen et al. - 2008 - Characterization of defects in silicon carbide by Raman spectroscopy.pdf:application/pdf},
|
||
}
|
||
|
||
@article{song_depth_2020,
|
||
title = {Depth {Profiling} of {Ion}-{Implanted} {4H}–{SiC} {Using} {Confocal} {Raman} {Spectroscopy}},
|
||
volume = {10},
|
||
copyright = {https://creativecommons.org/licenses/by/4.0/},
|
||
issn = {2073-4352},
|
||
url = {https://www.mdpi.com/2073-4352/10/2/131},
|
||
doi = {10.3390/cryst10020131},
|
||
abstract = {For silicon carbide (SiC) processed by ion-implantation, dedicated test structure fabrication or destructive sample processing on test wafers are usually required to obtain depth profiles of electrical characteristics such as carrier concentration. In this study, a rapid and non-destructive approach for depth profiling is presented that uses confocal Raman microscopy. As an example, a 4H–SiC substrate with an epitaxial layer of several micrometers thick and top layer in nanoscale that was modified by ion-implantation was characterized. From the Raman depth profiling, longitudinal optical (LO) mode from the epitaxial layer and longitudinal optical phonon-plasmon coupled (LOPC) mode from the substrate layer can be sensitively distinguished at the interface. The position profile of the LOPC peak intensity in the depth direction was found to be effective in estimating the thickness of the epitaxial layer. For three kinds of epitaxial layer with thicknesses of 5.3 µm, 6 µm, and 7.5 µm, the average deviations of the Raman depth analysis were −1.7 µm, −1.2 µm, and −1.4 µm, respectively. Moreover, when moving the focal plane from the heavily doped sample ({\textasciitilde}1018 cm−3) to the epitaxial layer ({\textasciitilde}1016 cm−3), the LOPC peak showed a blue shift. The twice travel of the photon (excitation and collection) through the ion-implanted layer with doping concentrations higher than 1 × 1018 cm−3 led to a difference in the LOPC peak position for samples with the same epitaxial layer and substrate layer. Furthermore, the influences of the setup in terms of pinhole size and numerical aperture of objective lens on the depth profiling results were studied. Different from other research on Raman depth profiling, the 50× long working distance objective lens (50L× lens) was found more suitable than the 100× lens for the depth analysis 4H–SiC with a multi-layer structure.},
|
||
language = {en},
|
||
number = {2},
|
||
urldate = {2025-06-04},
|
||
journal = {Crystals},
|
||
author = {Song, Ying and Xu, Zongwei and Liu, Tao and Rommel, Mathias and Wang, Hong and Wang, Yufang and Fang, Fengzhou},
|
||
month = feb,
|
||
year = {2020},
|
||
pages = {131},
|
||
file = {PDF:/home/chn/Zotero/storage/PR6FW4VH/Song et al. - 2020 - Depth Profiling of Ion-Implanted 4H–SiC Using Confocal Raman Spectroscopy.pdf:application/pdf},
|
||
}
|
||
|
||
@article{harima_raman_1995,
|
||
title = {Raman scattering from anisotropic {LO}-phonon–plasmon–coupled mode in \textit{n} -type {4H}– and {6H}–{SiC}},
|
||
volume = {78},
|
||
issn = {0021-8979, 1089-7550},
|
||
url = {https://pubs.aip.org/jap/article/78/3/1996/489713/Raman-scattering-from-anisotropic-LO-phonon},
|
||
doi = {10.1063/1.360174},
|
||
abstract = {LO-phonon–plasmon–coupled modes in n-type 4H– and 6H–SiC single crystals with free-carrier concentrations of 1016–1018 cm−3 have been measured by Raman scattering at room temperature. The axial-type mode for which plasma oscillation and atomic displacement are parallel to the c axis, and the planar-type mode for which these oscillations lie in the c plane, have been individually observed. From a line-shape analysis of the observed spectra, the plasmon frequency, carrier damping, and phonon damping have been deduced. These quantities have large differences between the axial- and planar-type mode in 6H–SiC, indicating its large crystal anisotropy. On the contrary, 4H–SiC shows small anisotropy. The longitudinal and transverse effective mass components of the electron have been determined from the plasmon frequency using carrier densities derived from Hall measurements. The deduced values are m∥=1.4m0 and m⊥=0.35m0 for 6H–SiC, and m∥=0.48m0 and m⊥=0.30m0 for 4H–SiC. The carrier mobility obtained from the analysis is also anisotropic. This is consistent with reported electrical measurements.},
|
||
language = {en},
|
||
number = {3},
|
||
urldate = {2025-06-22},
|
||
journal = {Journal of Applied Physics},
|
||
author = {Harima, Hiroshi and Nakashima, Shin-ichi and Uemura, Tomoki},
|
||
month = aug,
|
||
year = {1995},
|
||
pages = {1996--2005},
|
||
file = {PDF:/home/chn/Zotero/storage/Y9PU79VE/Harima et al. - 1995 - Raman scattering from anisotropic LO-phonon–plasmon–coupled mode in n -type 4H– and 6H–SiC.pdf:application/pdf},
|
||
}
|
||
|
||
@article{yan_single-defect_2021,
|
||
title = {Single-defect phonons imaged by electron microscopy},
|
||
volume = {589},
|
||
issn = {0028-0836, 1476-4687},
|
||
url = {https://www.nature.com/articles/s41586-020-03049-y},
|
||
doi = {10.1038/s41586-020-03049-y},
|
||
language = {en},
|
||
number = {7840},
|
||
urldate = {2025-06-22},
|
||
journal = {Nature},
|
||
author = {Yan, Xingxu and Liu, Chengyan and Gadre, Chaitanya A. and Gu, Lei and Aoki, Toshihiro and Lovejoy, Tracy C. and Dellby, Niklas and Krivanek, Ondrej L. and Schlom, Darrell G. and Wu, Ruqian and Pan, Xiaoqing},
|
||
month = jan,
|
||
year = {2021},
|
||
pages = {65--69},
|
||
file = {PDF:/home/chn/Zotero/storage/K3PFH67S/Yan et al. - 2021 - Single-defect phonons imaged by electron microscopy.pdf:application/pdf},
|
||
}
|
||
|
||
@article{_n-sic_2010,
|
||
title = {n-{SiC拉曼散射光谱的温度特性}},
|
||
volume = {59},
|
||
issn = {1000-3290},
|
||
url = {https://kns.cnki.net/KCMS/detail/detail.aspx?dbcode=CJFQ&dbname=CJFD2010&filename=WLXB201006094},
|
||
abstract = {测量了采用离子注入法得到掺N的n-SiC晶体从100—450K的拉曼光谱.研究了SiC一级拉曼谱、电子拉曼散射谱及二级拉曼谱的温度效应.实验结果表明,大部分SiC一级拉曼峰会随温度升高向低波数方向移动,但声学模红移(峰值位置向低频方向移动)的幅度较光学模小.重掺杂4H-SiC的纵光学声子等离子体激元耦合(LOPC)模频率随温度升高表现出先蓝移(峰值位置向高频方向移动)后红移的变化趋势,表明LOPC模的温度特性不仅会受到非简谐效应的影响,还与实际已离化杂质浓度有关.电子拉曼散射峰线宽随温度升高而增大,强度随温度升高而减弱,但其峰值位置基本不变.二级拉曼谱的红移不如一级拉曼谱明显,但其峰值强度却随着温度的升高显示出明显下降的趋势.},
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language = {zh-CN},
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number = {6},
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urldate = {2025-06-22},
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journal = {物理学报},
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author = {{韩茹} and {樊晓桠} and {杨银堂}},
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year = {2010},
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note = {download: 369
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album: 基础科学
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CLC: O473
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dbcode: CJFQ
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dbname: CJFD2010
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||
filename: WLXB201006094
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CNKICite: 6},
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keywords = {温度, 电子拉曼散射, 碳化硅, 纵光学声子等离子体激元耦合模},
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pages = {4261--4266},
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file = {n-SiC拉曼散射光谱的温度特性:/home/chn/Zotero/storage/M94LRGCT/n-SiC拉曼散射光谱的温度特性.pdf:application/pdf},
|
||
}
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