2025-06-22 16:42:26 +08:00
parent 2b288fc41a
commit d74094014b
3 changed files with 93 additions and 36 deletions
--- a/test-typst/introduction.typ
+++ b/test-typst/introduction.typ
@@ -53,29 +53,24 @@ Studies in Raman scattering of 4H-SiC have been conducted since as early as 1968

 近年来，更多信息被从拉曼光谱中挖掘出来。
 LO 声子峰或 LOPC 峰已经被证明与自由载流子的类型和浓度有关，它们已经被用于估计离子注入层的厚度和 n 型 SiC 的掺杂浓度。
-部分层错的拉曼光谱也已经被研究，可以被用于检测特定结构层错的存在和位置。
-也有一些研究探讨了掺杂对拉曼光谱的影响。 // TODO: 具体是什么影响？
-然而，拉曼光谱上仍有一些不知来源的峰；同时，也缺少一些理论上预测应该存在的峰。
-此外，预测掺杂导致的新峰也没有说明原因。
+3C-SiC 的一类层错的拉曼和 EELS 光谱已经被研究，但更多类型的层错及其在 4H-SiC 中的拉曼光谱还没有被研究。
+有人提出了可能的 N 掺杂原子的拉曼峰，但并没有在实验上对比验证，同时 Al 或其它点缺陷的拉曼峰也缺少系统的研究。
+此外，拉曼光谱上仍有一些不知来源的峰；同时，也缺少一些理论上预测应该存在的峰。
+// TODO: 总结更多文献

 In recent years, increasingly rich information has been extracted from Raman spectra of 4H-SiC.
 Longitudinal optical phonon–plasmon coupling (LOPC) peek
-  has been utilized to rapidly estimate to identify doping type in different layers
-  // depth profiling xxx
-  and the doping concentration in n-type SiC.
-  // Raman scattering from anisotropic LO-phonon-plasmo
-Peeks associated with some stacking faults have also been investigated
-  and used to detect the presence and location of specific structural faults.
-  // TODO: 缺陷峰，并补充对应的文献
-Moreover, the potential effects of doping on Raman spectra have been explored.
-// TODO: 掺杂导致的本征峰的变化的文献
-However, there are still some unsolved issues.
-Certain phonon modes predicted by theory remain unobserved,
+  has been utilized to rapidly estimate the doping concentration in n-type SiC @harima_raman_1995
+    and to identify doping type in different layers @song_depth_2020,
+  while the influence of free carriers on the LO phonon peek in p-type SiC
+    has not been systematically investigated yet.
+Peeks associated with one type of stacking faults in 3C-SiC have been investigated @yan_single-defect_2021,
+  while other types of stacking faults and their Raman spectra in 4H-SiC remain unexplored.
+Peeks associated with nitrogen dopants have been proposed @_n-sic_2010
+  but have not been experimentally verified,
+  while systematic studies on the Raman spectra of aluminum or other point defects are still lacking.
+Moreover, certain phonon modes predicted by theory remain unobserved,
  while there are still some unidentified peaks in the Raman spectra.
-An A1 peek was observed in some experiment but not in others, the reason for which is still unclear.
-In addition, relation between defects and Raman peek is still not very clear,
-  potential raman peeks caused by defects and doping still need to be explored.
-// TODO: 调整语言，细化描述

 本文通过三种方式，研究 4H-SiC 中带缺陷和不带缺陷的声子。我们第一次做到了什么什么。

--- a/test-typst/main.typ
+++ b/test-typst/main.typ
@@ -24,6 +24,7 @@

 // 两端对齐
 #set par(justify: true)
+#set par(first-line-indent: (amount: 2em, all: true))

 // 中文使用思源宋体，英文使用 Times New Roman
 #set text(font: ("Times New Roman", "Source Han Serif SC"))
--- a/test-typst/ref.bib
+++ b/test-typst/ref.bib
@@ -316,23 +316,6 @@
 	file = {PDF:/home/chn/Zotero/storage/AXK4NKG7/Asada et al. - 2016 - Hall scattering factors in p-type 4H-SiC with various doping concentrations.pdf:application/pdf},
 }

-@article{yan_single-defect_2021,
-	title = {Single-defect phonons imaged by electron microscopy},
-	volume = {589},
-	issn = {0028-0836, 1476-4687},
-	url = {https://www.nature.com/articles/s41586-020-03049-y},
-	doi = {10.1038/s41586-020-03049-y},
-	language = {en},
-	number = {7840},
-	urldate = {2025-06-03},
-	journal = {Nature},
-	author = {Yan, Xingxu and Liu, Chengyan and Gadre, Chaitanya A. and Gu, Lei and Aoki, Toshihiro and Lovejoy, Tracy C. and Dellby, Niklas and Krivanek, Ondrej L. and Schlom, Darrell G. and Wu, Ruqian and Pan, Xiaoqing},
-	month = jan,
-	year = {2021},
-	pages = {65--69},
-	file = {PDF:/home/chn/Zotero/storage/MWI4MNV9/Yan et al. - 2021 - Single-defect phonons imaged by electron microscopy.pdf:application/pdf},
-}
-
@article{egoavil_atomic_2014,
 	title = {Atomic resolution mapping of phonon excitations in {STEM}-{EELS} experiments},
 	volume = {147},
@@ -478,3 +461,81 @@
 	pages = {1356--1368},
 	file = {PDF:/home/chn/Zotero/storage/7SFXQFGR/Hundhausen et al. - 2008 - Characterization of defects in silicon carbide by Raman spectroscopy.pdf:application/pdf},
 }
+
+@article{song_depth_2020,
+	title = {Depth {Profiling} of {Ion}-{Implanted} {4H}–{SiC} {Using} {Confocal} {Raman} {Spectroscopy}},
+	volume = {10},
+	copyright = {https://creativecommons.org/licenses/by/4.0/},
+	issn = {2073-4352},
+	url = {https://www.mdpi.com/2073-4352/10/2/131},
+	doi = {10.3390/cryst10020131},
+	abstract = {For silicon carbide (SiC) processed by ion-implantation, dedicated test structure fabrication or destructive sample processing on test wafers are usually required to obtain depth proﬁles of electrical characteristics such as carrier concentration. In this study, a rapid and non-destructive approach for depth proﬁling is presented that uses confocal Raman microscopy. As an example, a 4H–SiC substrate with an epitaxial layer of several micrometers thick and top layer in nanoscale that was modiﬁed by ion-implantation was characterized. From the Raman depth proﬁling, longitudinal optical (LO) mode from the epitaxial layer and longitudinal optical phonon-plasmon coupled (LOPC) mode from the substrate layer can be sensitively distinguished at the interface. The position proﬁle of the LOPC peak intensity in the depth direction was found to be eﬀective in estimating the thickness of the epitaxial layer. For three kinds of epitaxial layer with thicknesses of 5.3 µm, 6 µm, and 7.5 µm, the average deviations of the Raman depth analysis were −1.7 µm, −1.2 µm, and −1.4 µm, respectively. Moreover, when moving the focal plane from the heavily doped sample ({\textasciitilde}1018 cm−3) to the epitaxial layer ({\textasciitilde}1016 cm−3), the LOPC peak showed a blue shift. The twice travel of the photon (excitation and collection) through the ion-implanted layer with doping concentrations higher than 1 × 1018 cm−3 led to a diﬀerence in the LOPC peak position for samples with the same epitaxial layer and substrate layer. Furthermore, the inﬂuences of the setup in terms of pinhole size and numerical aperture of objective lens on the depth proﬁling results were studied. Diﬀerent from other research on Raman depth proﬁling, the 50× long working distance objective lens (50L× lens) was found more suitable than the 100× lens for the depth analysis 4H–SiC with a multi-layer structure.},
+	language = {en},
+	number = {2},
+	urldate = {2025-06-04},
+	journal = {Crystals},
+	author = {Song, Ying and Xu, Zongwei and Liu, Tao and Rommel, Mathias and Wang, Hong and Wang, Yufang and Fang, Fengzhou},
+	month = feb,
+	year = {2020},
+	pages = {131},
+	file = {PDF:/home/chn/Zotero/storage/PR6FW4VH/Song et al. - 2020 - Depth Profiling of Ion-Implanted 4H–SiC Using Confocal Raman Spectroscopy.pdf:application/pdf},
+}
+
+@article{harima_raman_1995,
+	title = {Raman scattering from anisotropic {LO}-phonon–plasmon–coupled mode in \textit{n} -type {4H}– and {6H}–{SiC}},
+	volume = {78},
+	issn = {0021-8979, 1089-7550},
+	url = {https://pubs.aip.org/jap/article/78/3/1996/489713/Raman-scattering-from-anisotropic-LO-phonon},
+	doi = {10.1063/1.360174},
+	abstract = {LO-phonon–plasmon–coupled modes in n-type 4H– and 6H–SiC single crystals with free-carrier concentrations of 1016–1018 cm−3 have been measured by Raman scattering at room temperature. The axial-type mode for which plasma oscillation and atomic displacement are parallel to the c axis, and the planar-type mode for which these oscillations lie in the c plane, have been individually observed. From a line-shape analysis of the observed spectra, the plasmon frequency, carrier damping, and phonon damping have been deduced. These quantities have large differences between the axial- and planar-type mode in 6H–SiC, indicating its large crystal anisotropy. On the contrary, 4H–SiC shows small anisotropy. The longitudinal and transverse effective mass components of the electron have been determined from the plasmon frequency using carrier densities derived from Hall measurements. The deduced values are m∥=1.4m0 and m⊥=0.35m0 for 6H–SiC, and m∥=0.48m0 and m⊥=0.30m0 for 4H–SiC. The carrier mobility obtained from the analysis is also anisotropic. This is consistent with reported electrical measurements.},
+	language = {en},
+	number = {3},
+	urldate = {2025-06-22},
+	journal = {Journal of Applied Physics},
+	author = {Harima, Hiroshi and Nakashima, Shin-ichi and Uemura, Tomoki},
+	month = aug,
+	year = {1995},
+	pages = {1996--2005},
+	file = {PDF:/home/chn/Zotero/storage/Y9PU79VE/Harima et al. - 1995 - Raman scattering from anisotropic LO-phonon–plasmon–coupled mode in n -type 4H– and 6H–SiC.pdf:application/pdf},
+}
+
+@article{yan_single-defect_2021,
+	title = {Single-defect phonons imaged by electron microscopy},
+	volume = {589},
+	issn = {0028-0836, 1476-4687},
+	url = {https://www.nature.com/articles/s41586-020-03049-y},
+	doi = {10.1038/s41586-020-03049-y},
+	language = {en},
+	number = {7840},
+	urldate = {2025-06-22},
+	journal = {Nature},
+	author = {Yan, Xingxu and Liu, Chengyan and Gadre, Chaitanya A. and Gu, Lei and Aoki, Toshihiro and Lovejoy, Tracy C. and Dellby, Niklas and Krivanek, Ondrej L. and Schlom, Darrell G. and Wu, Ruqian and Pan, Xiaoqing},
+	month = jan,
+	year = {2021},
+	pages = {65--69},
+	file = {PDF:/home/chn/Zotero/storage/K3PFH67S/Yan et al. - 2021 - Single-defect phonons imaged by electron microscopy.pdf:application/pdf},
+}
+
+@article{_n-sic_2010,
+	title = {n-{SiC拉曼散射光谱的温度特性}},
+	volume = {59},
+	issn = {1000-3290},
+	url = {https://kns.cnki.net/KCMS/detail/detail.aspx?dbcode=CJFQ&dbname=CJFD2010&filename=WLXB201006094},
+	abstract = {测量了采用离子注入法得到掺N的n-SiC晶体从100—450K的拉曼光谱.研究了SiC一级拉曼谱、电子拉曼散射谱及二级拉曼谱的温度效应.实验结果表明,大部分SiC一级拉曼峰会随温度升高向低波数方向移动,但声学模红移(峰值位置向低频方向移动)的幅度较光学模小.重掺杂4H-SiC的纵光学声子等离子体激元耦合(LOPC)模频率随温度升高表现出先蓝移(峰值位置向高频方向移动)后红移的变化趋势,表明LOPC模的温度特性不仅会受到非简谐效应的影响,还与实际已离化杂质浓度有关.电子拉曼散射峰线宽随温度升高而增大,强度随温度升高而减弱,但其峰值位置基本不变.二级拉曼谱的红移不如一级拉曼谱明显,但其峰值强度却随着温度的升高显示出明显下降的趋势.},
+	language = {zh-CN},
+	number = {6},
+	urldate = {2025-06-22},
+	journal = {物理学报},
+	author = {{韩茹} and {樊晓桠} and {杨银堂}},
+	year = {2010},
+	note = {download: 369
+album: 基础科学
+CLC: O473
+dbcode: CJFQ
+dbname: CJFD2010
+filename: WLXB201006094
+CNKICite: 6},
+	keywords = {温度, 电子拉曼散射, 碳化硅, 纵光学声子等离子体激元耦合模},
+	pages = {4261--4266},
+	file = {n-SiC拉曼散射光谱的温度特性:/home/chn/Zotero/storage/M94LRGCT/n-SiC拉曼散射光谱的温度特性.pdf:application/pdf},
+}