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#set heading(numbering: "1.")
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#include "introduction.typ"
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#include "method.typ"
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#include "method/default.typ"
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#include "result/default.typ"
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#include "appendix/default.typ"
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#include "others/default.typ"
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@@ -1,21 +0,0 @@
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= Method
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== Experiment details
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外延片的厚度、掺杂浓度、生长 C/Si 比。
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拉曼设备的型号。激光的波长，背散射。共焦针孔。对焦时向上或向下调整的距离。
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画个图，表示正入射、掠入射和肩入射的角度关系。
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Only back-scattering configurations were considered in this study.
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== Simulation details
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无缺陷的模型大小。带缺陷的情况下，模型大小，每个模型的代号和缺陷结构。
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第一性原理计算使用 VASP，使用 PBE PAW，平面波截断能，K 点网格，涂抹，自洽和弛豫的 threshold。
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声子计算使用 phonopy phono3py ufo，BEC 修正的算法。
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// 在略入射的过程中，角度的关系不大（即使是 60 度入射，和 90 度入射差别也不大）。因此我们按照折射角 20 度的结果计算。
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// 考虑到斜切，则大约是 24 度。
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51
paper/method/default.typ
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51
paper/method/default.typ
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= Method
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== Experiment details
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外延片的厚度、掺杂浓度、生长 C/Si 比，斜切角度。
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5 个 6 寸的 p 型外延片被使用，我们将它们称为 W#sub[i]。
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使用的衬底都是 n 型，前四个外延片的厚度为 1 微米，第五个外延片的厚度为 2 微米。
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外延层的 Al 掺杂浓度分别为 0.1 3.8 5.1 6.4 10 E18 cm#super[-3]，使用 SIMS 测试。
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生长时 Si/C 比分别为 0.7 1.2 1.6 2.4 2.0。、
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所有外延片都有 4 度斜切。
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Five 6-inch p-type epitaxial wafers on n-type substrates were used, denoted as W#sub[1]-W#sub[5].
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All epitaxial layers were grown using step-flow method with a 4° offcut angle.
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The Al doping concentrations in the epitaxial layers
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were 0.1, 3.8, 5.1, 6.4, and 10 #sym.times 10 cm#super[-3] (measured using SIMS)
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with W#sub[1]-W#sub[4] having a thickness of 1 μm and W#sub[5] having a thickness of 2 μm, respectively.
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The Si/C ratios of the five wafers during growth were 0.7, 1.2, 1.6, 2.4, and 2.0, respectively.
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拉曼设备的型号。激光的波长，背散射。共焦针孔。
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拉曼设备的型号是 LabRAM HR Evolution，使用背散射。
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大部分实验中，我们使用 532 nm 的激光，少部分实验中使用 325 nm 的激光以观测紫外拉曼。
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有三个不同的入射配置，包括正入射、掠入射、边入射。
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考虑到 4 度斜切和 4H-SiC 几乎各向同性的折射率（） @shaffer_refractive_1971 ，
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在正散射过程中，我们使用 100 微米的共焦针孔，以尽可能提高 z 方向的分辨率 @song_depth_2020。
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All our Raman experiments were performed using a LabRAM HR Evolution system with back-scattering configuration,
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where collected scattered light has a reversed wavevector direction compared to the incident light.
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A 532 nm laser was used in most experiments,
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while a 325 nm laser was used to observe Raman signals under ultraviolet excitation.
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Three different incidece configurations were used, as shown in @figure-incidence:
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normal incidence, where the laser beam is perpendicular to the epitaxial surface;
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grazing incidence, where the laser beam is nearly parallel to the epitaxial surface;
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and edge incidence, where the laser beam is incident at the edge of the wafer, instead of the epitaxial surface.
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Taking the
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During the experiments, a 100 μm confocal pinhole was used to improve the z-direction resolution @song_depth_2020.
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and the refracted light propagates with about 25 #sym.degree to the c axis;
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#include "figure-incidence.typ"
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== Simulation details
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无缺陷的模型大小。带缺陷的情况下，模型大小，每个模型的代号和缺陷结构。
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第一性原理计算使用 VASP，使用 PBE PAW，平面波截断能，K 点网格，涂抹，自洽和弛豫的 threshold。
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声子计算使用 phonopy phono3py ufo，BEC 修正的算法。
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// 在略入射的过程中，角度的关系不大（即使是 60 度入射，和 90 度入射差别也不大）。因此我们按照折射角 20 度的结果计算。
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// 考虑到斜切，则大约是 24 度。
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5
paper/method/figure-incidence.typ
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5
paper/method/figure-incidence.typ
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#figure(
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image("/画图/入射方向/main.svg"),
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caption: [Light incidence configurations in our Raman experiments.],
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placement: none,
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)<figure-incidence>
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@@ -535,7 +535,25 @@ dbcode: CJFQ
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dbname: CJFD2010
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filename: WLXB201006094
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CNKICite: 6},
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keywords = {温度, 电子拉曼散射, 碳化硅, 纵光学声子等离子体激元耦合模},
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keywords = {碳化硅, 温度, 电子拉曼散射, 纵光学声子等离子体激元耦合模},
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pages = {4261--4266},
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file = {n-SiC拉曼散射光谱的温度特性:/home/chn/Zotero/storage/M94LRGCT/n-SiC拉曼散射光谱的温度特性.pdf:application/pdf},
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}
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@article{shaffer_refractive_1971,
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title = {Refractive {Index}, {Dispersion}, and {Birefringence} of {Silicon} {Carbide} {Polytypes}},
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volume = {10},
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copyright = {https://doi.org/10.1364/OA\_License\_v1\#VOR},
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issn = {0003-6935, 1539-4522},
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url = {https://opg.optica.org/abstract.cfm?URI=ao-10-5-1034},
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doi = {10.1364/AO.10.001034},
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language = {en},
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number = {5},
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urldate = {2025-06-23},
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journal = {Applied Optics},
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author = {Shaffer, P. T. B.},
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month = may,
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year = {1971},
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pages = {1034},
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file = {PDF:/home/chn/Zotero/storage/YJD5HYLD/Shaffer - 1971 - Refractive Index, Dispersion, and Birefringence of Silicon Carbide Polytypes.pdf:application/pdf},
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}
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