diff --git a/paper/main.typ b/paper/main.typ
index 79770be..5df2f11 100644
--- a/paper/main.typ
+++ b/paper/main.typ
@@ -47,7 +47,7 @@
 #set heading(numbering: "1.")
 
 #include "introduction.typ"
-#include "method.typ"
+#include "method/default.typ"
 #include "result/default.typ"
 #include "appendix/default.typ"
 #include "others/default.typ"
diff --git a/paper/method.typ b/paper/method.typ
deleted file mode 100644
index 61ae3a8..0000000
--- a/paper/method.typ
+++ /dev/null
@@ -1,21 +0,0 @@
-= Method
-
-== Experiment details
-
-外延片的厚度、掺杂浓度、生长 C/Si 比。
-
-拉曼设备的型号。激光的波长，背散射。共焦针孔。对焦时向上或向下调整的距离。
-
-画个图，表示正入射、掠入射和肩入射的角度关系。
-
-Only back-scattering configurations were considered in this study.
-
-== Simulation details
-
-无缺陷的模型大小。带缺陷的情况下，模型大小，每个模型的代号和缺陷结构。
-
-第一性原理计算使用 VASP，使用 PBE PAW，平面波截断能，K 点网格，涂抹，自洽和弛豫的 threshold。
-声子计算使用 phonopy phono3py ufo，BEC 修正的算法。
-
-// 在略入射的过程中，角度的关系不大（即使是 60 度入射，和 90 度入射差别也不大）。因此我们按照折射角 20 度的结果计算。
-// 考虑到斜切，则大约是 24 度。
diff --git a/paper/method/default.typ b/paper/method/default.typ
new file mode 100644
index 0000000..d66f506
--- /dev/null
+++ b/paper/method/default.typ
@@ -0,0 +1,51 @@
+= Method
+
+== Experiment details
+
+外延片的厚度、掺杂浓度、生长 C/Si 比，斜切角度。
+
+5 个 6 寸的 p 型外延片被使用，我们将它们称为 W#sub[i]。
+使用的衬底都是 n 型，前四个外延片的厚度为 1 微米，第五个外延片的厚度为 2 微米。
+外延层的 Al 掺杂浓度分别为 0.1 3.8 5.1 6.4 10 E18 cm#super[-3]，使用 SIMS 测试。
+生长时 Si/C 比分别为 0.7 1.2 1.6 2.4 2.0。、
+所有外延片都有 4 度斜切。
+
+Five 6-inch p-type epitaxial wafers on n-type substrates were used, denoted as W#sub[1]-W#sub[5].
+All epitaxial layers were grown using step-flow method with a 4° offcut angle.
+The Al doping concentrations in the epitaxial layers
+  were 0.1, 3.8, 5.1, 6.4, and 10 #sym.times 10 cm#super[-3] (measured using SIMS)
+  with W#sub[1]-W#sub[4] having a thickness of 1 μm and W#sub[5] having a thickness of 2 μm, respectively.
+The Si/C ratios of the five wafers during growth were 0.7, 1.2, 1.6, 2.4, and 2.0, respectively.
+
+拉曼设备的型号。激光的波长，背散射。共焦针孔。
+
+拉曼设备的型号是 LabRAM HR Evolution，使用背散射。
+大部分实验中，我们使用 532 nm 的激光，少部分实验中使用 325 nm 的激光以观测紫外拉曼。
+有三个不同的入射配置，包括正入射、掠入射、边入射。
+考虑到 4 度斜切和 4H-SiC 几乎各向同性的折射率（） @shaffer_refractive_1971 ，
+在正散射过程中，我们使用 100 微米的共焦针孔，以尽可能提高 z 方向的分辨率 @song_depth_2020。
+
+All our Raman experiments were performed using a LabRAM HR Evolution system with back-scattering configuration,
+  where collected scattered light has a reversed wavevector direction compared to the incident light.
+A 532 nm laser was used in most experiments,
+  while a 325 nm laser was used to observe Raman signals under ultraviolet excitation.
+Three different incidece configurations were used, as shown in @figure-incidence:
+  normal incidence, where the laser beam is perpendicular to the epitaxial surface;
+  grazing incidence, where the laser beam is nearly parallel to the epitaxial surface;
+  and edge incidence, where the laser beam is incident at the edge of the wafer, instead of the epitaxial surface.
+Taking the 
+During the experiments, a 100 μm confocal pinhole was used to improve the z-direction resolution @song_depth_2020.
+
+    and the refracted light propagates with about 25 #sym.degree to the c axis;
+
+#include "figure-incidence.typ"
+
+== Simulation details
+
+无缺陷的模型大小。带缺陷的情况下，模型大小，每个模型的代号和缺陷结构。
+
+第一性原理计算使用 VASP，使用 PBE PAW，平面波截断能，K 点网格，涂抹，自洽和弛豫的 threshold。
+声子计算使用 phonopy phono3py ufo，BEC 修正的算法。
+
+// 在略入射的过程中，角度的关系不大（即使是 60 度入射，和 90 度入射差别也不大）。因此我们按照折射角 20 度的结果计算。
+// 考虑到斜切，则大约是 24 度。
diff --git a/paper/method/figure-incidence.typ b/paper/method/figure-incidence.typ
new file mode 100644
index 0000000..851fec8
--- /dev/null
+++ b/paper/method/figure-incidence.typ
@@ -0,0 +1,5 @@
+#figure(
+  image("/画图/入射方向/main.svg"),
+  caption: [Light incidence configurations in our Raman experiments.],
+  placement: none,
+)<figure-incidence>
diff --git a/paper/ref.bib b/paper/ref.bib
index e8c1a7b..26a73c5 100644
--- a/paper/ref.bib
+++ b/paper/ref.bib
@@ -535,7 +535,25 @@ dbcode: CJFQ
 dbname: CJFD2010
 filename: WLXB201006094
 CNKICite: 6},
-	keywords = {温度, 电子拉曼散射, 碳化硅, 纵光学声子等离子体激元耦合模},
+	keywords = {碳化硅, 温度, 电子拉曼散射, 纵光学声子等离子体激元耦合模},
 	pages = {4261--4266},
 	file = {n-SiC拉曼散射光谱的温度特性:/home/chn/Zotero/storage/M94LRGCT/n-SiC拉曼散射光谱的温度特性.pdf:application/pdf},
 }
+
+@article{shaffer_refractive_1971,
+	title = {Refractive {Index}, {Dispersion}, and {Birefringence} of {Silicon} {Carbide} {Polytypes}},
+	volume = {10},
+	copyright = {https://doi.org/10.1364/OA\_License\_v1\#VOR},
+	issn = {0003-6935, 1539-4522},
+	url = {https://opg.optica.org/abstract.cfm?URI=ao-10-5-1034},
+	doi = {10.1364/AO.10.001034},
+	language = {en},
+	number = {5},
+	urldate = {2025-06-23},
+	journal = {Applied Optics},
+	author = {Shaffer, P. T. B.},
+	month = may,
+	year = {1971},
+	pages = {1034},
+	file = {PDF:/home/chn/Zotero/storage/YJD5HYLD/Shaffer - 1971 - Refractive Index, Dispersion, and Birefringence of Silicon Carbide Polytypes.pdf:application/pdf},
+}
diff --git a/画图/入射方向/main.svg b/画图/入射方向/main.svg
new file mode 100644
index 0000000..797d1b3
--- /dev/null
+++ b/画图/入射方向/main.svg
@@ -0,0 +1,3 @@
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