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@@ -683,3 +683,27 @@ CNKICite: 6},
pages = {205202},
file = {PDF:/home/chn/Zotero/storage/5U5BPLCX/Gerstmann et al. - 2003 - Formation and annealing of nitrogen-related complexes in SiC.pdf:application/pdf},
}
@article{_n-sic_2008,
title = {n-{SiC的电子拉曼散射及二级拉曼谱研究}},
issn = {1000-3290},
url = {https://kns.cnki.net/KCMS/detail/detail.aspx?dbcode=CJFQ&dbname=CJFD2008&filename=WLXB200805091},
abstract = {研究了利用离子注入法得到的掺氮n-SiC拉曼光谱.理论线形分析表明,与4H-SiC相比,6H-SiC中LO声子等离子体激元耦合模(LOPC模)拉曼位移随自由载流子浓度变化较小.514.5nm激发光下得到的电子拉曼散射光谱表明,k位处由1s(A1)到1s(E)的能谷轨道跃迁带来的拉曼谱6H-SiC中有四条,4H-SiC中有二条;高频630.3及635cm-1处观察到的谱线被认为与深能级缺陷有关.最后,利用纤锌矿型结构二级拉曼散射选择定则指认了6H-及4H-SiC二级拉曼谱.},
language = {zh-CN},
number = {5},
urldate = {2025-07-04},
journal = {物理学报},
author = {{韩茹} and {杨银堂} and {柴常春}},
year = {2008},
note = {foundation: 国家部委预研资助项目(批准号:51308030201)资助的课题{\textasciitilde}{\textasciitilde}
download: 403
album: 基础科学
CLC: O472
dbcode: CJFQ
dbname: CJFD2008
filename: WLXB200805091
CNKICite: 6},
keywords = {倍频谱, 电子拉曼散射, 碳化硅, 轨道能谷分裂},
pages = {3182--3187},
file = {n-SiC的电子拉曼散射及二级拉曼谱研究:/home/chn/Zotero/storage/2PYQG2SP/n-SiC的电子拉曼散射及二级拉曼谱研究.pdf:application/pdf},
}

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@@ -1,24 +1,24 @@
=== Phonons with Negligible Polarities
我们 gamma 点的声子来近似弱极性的声子
gamma 点的声子来近似。
Gamma 点的声子被用于
Gamma 点的声子被用于近似参与拉曼散射的弱极性声子,无论入射配置。
这个近似是因为这些声子的色散曲线在 Gamma 点附近连续且非常接近 Gamma 点,并且已经被广泛使用。
// We investigate phonons at Gamma instead of the exact location near Gamma.
Phonons at the #sym.Gamma point were used
to approximate negligible-polar phonons that participating in Raman processes
Phonons at the #sym.Gamma point were used to approximate negligible-polar phonons,
regardless of the wavevector of the incident and scattered light.
This approximation is widely adopted (cite) and justified by the fact that,
although the phonons participating in Raman processes are not these strictly located at the #sym.Gamma point,
they are very close to the #sym.Gamma point in reciprocal space
(about 0.01 nm#super[-1] in back-scattering configurations with 532 nm laser light,
which corresponds to only 1% of the smallest reciprocal lattice vector of 4H-SiC,
see orange dotted line in @figure-discont),
and their dispersion at #sym.Gamma point is continuous with vanishing derivatives.
Therefore, negligible-polar phonons involved in Raman processes
have nearly indistinguishable properties from those at the #sym.Gamma point.
This approximation is based on the fact that
the dispersion of these phonons is continuous and very close to the #sym.Gamma point,
and has been widely adopted in the literature @_n-sic_2008.
gamma 点处 18 声子的表示。它们的拉曼张量的形状可以确定,大小无法确定
18 个声子属于 12 表示。拉曼张量的形状可以确定,大小不能
这些声子的拉曼张量的形状可以通过对称性分析来确定。
Gamma 点声子满足 C#sub[6v] 点群对称性18 个模式包含了 2A#sub[1] + 4B#sub[1] + 2E#sub[1] + 4E#sub[2] 12 个表示;
其中简并表示E1 E2的拉曼张量的形状可以通过进一步考虑在 C#sub[2v] 点群中的表示来确定,如表所示。
其中B#sub[1] 模式具有零拉曼张量,不参与拉曼散射;
其它表示的模式具有非零拉曼张量分量,可能可以在适当的偏振配置下在拉曼实验中观察到。
然而,模式是否足够强以在实验中可见取决于其拉曼张量分量的大小,而仅通过对称性分析无法确定这些大小。
// Representation of these 18 phonons, and the shape of their Raman tensors could be determined in advance.)
Phonons at the #sym.Gamma point satisfy the C#sub[6v] point group symmetry,

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@@ -43,7 +43,23 @@
- [x] 中文
- [x] 英文
- [x] 调整语言
- [ ] 弱极性
- [/] 弱极性
- [x] Gamma 近似
- [x] 中文
- [x] 英文
- [ ] 调整语言
- [ ] 表示
- [ ] 中文
- [ ] 英文
- [ ] 调整语言
- [ ] 估算拉曼张量
- [ ] 中文
- [ ] 英文
- [ ] 调整语言
- [ ] 第一性原理计算
- [ ] 中文
- [ ] 英文
- [ ] 调整语言
- [ ] 杂项
- [ ] N#sub[C]C#sub[Si] 有什么好处?
- [ ] 是否有其它需要研究的点缺陷?