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@@ -683,3 +683,27 @@ CNKICite: 6},
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pages = {205202},
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file = {PDF:/home/chn/Zotero/storage/5U5BPLCX/Gerstmann et al. - 2003 - Formation and annealing of nitrogen-related complexes in SiC.pdf:application/pdf},
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}
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@article{_n-sic_2008,
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title = {n-{SiC的电子拉曼散射及二级拉曼谱研究}},
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issn = {1000-3290},
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url = {https://kns.cnki.net/KCMS/detail/detail.aspx?dbcode=CJFQ&dbname=CJFD2008&filename=WLXB200805091},
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abstract = {研究了利用离子注入法得到的掺氮n-SiC拉曼光谱.理论线形分析表明,与4H-SiC相比,6H-SiC中LO声子等离子体激元耦合模(LOPC模)拉曼位移随自由载流子浓度变化较小.514.5nm激发光下得到的电子拉曼散射光谱表明,k位处由1s(A1)到1s(E)的能谷轨道跃迁带来的拉曼谱6H-SiC中有四条,4H-SiC中有二条;高频630.3及635cm-1处观察到的谱线被认为与深能级缺陷有关.最后,利用纤锌矿型结构二级拉曼散射选择定则指认了6H-及4H-SiC二级拉曼谱.},
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language = {zh-CN},
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number = {5},
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urldate = {2025-07-04},
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journal = {物理学报},
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author = {{韩茹} and {杨银堂} and {柴常春}},
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year = {2008},
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note = {foundation: 国家部委预研资助项目(批准号:51308030201)资助的课题{\textasciitilde}{\textasciitilde};
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download: 403
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album: 基础科学
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CLC: O472
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dbcode: CJFQ
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dbname: CJFD2008
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filename: WLXB200805091
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CNKICite: 6},
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keywords = {倍频谱, 电子拉曼散射, 碳化硅, 轨道能谷分裂},
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pages = {3182--3187},
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file = {n-SiC的电子拉曼散射及二级拉曼谱研究:/home/chn/Zotero/storage/2PYQG2SP/n-SiC的电子拉曼散射及二级拉曼谱研究.pdf:application/pdf},
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}
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@@ -1,24 +1,24 @@
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=== Phonons with Negligible Polarities
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我们用 gamma 点的声子来近似弱极性的声子。
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用 gamma 点的声子来近似。
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Gamma 点的声子被用于
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Gamma 点的声子被用于近似参与拉曼散射的弱极性声子,无论入射配置。
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这个近似是因为这些声子的色散曲线在 Gamma 点附近连续且非常接近 Gamma 点,并且已经被广泛使用。
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// We investigate phonons at Gamma instead of the exact location near Gamma.
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Phonons at the #sym.Gamma point were used
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to approximate negligible-polar phonons that participating in Raman processes
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Phonons at the #sym.Gamma point were used to approximate negligible-polar phonons,
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regardless of the wavevector of the incident and scattered light.
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This approximation is widely adopted (cite) and justified by the fact that,
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although the phonons participating in Raman processes are not these strictly located at the #sym.Gamma point,
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they are very close to the #sym.Gamma point in reciprocal space
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(about 0.01 nm#super[-1] in back-scattering configurations with 532 nm laser light,
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which corresponds to only 1% of the smallest reciprocal lattice vector of 4H-SiC,
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see orange dotted line in @figure-discont),
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and their dispersion at #sym.Gamma point is continuous with vanishing derivatives.
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Therefore, negligible-polar phonons involved in Raman processes
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have nearly indistinguishable properties from those at the #sym.Gamma point.
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This approximation is based on the fact that
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the dispersion of these phonons is continuous and very close to the #sym.Gamma point,
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and has been widely adopted in the literature @_n-sic_2008.
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gamma 点处 18 个声子的表示。它们的拉曼张量的形状可以确定,但大小无法确定。
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18 个声子属于 12 个表示。拉曼张量的形状可以确定,大小不能。
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这些声子的拉曼张量的形状可以通过对称性分析来确定。
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Gamma 点声子满足 C#sub[6v] 点群对称性,18 个模式包含了 2A#sub[1] + 4B#sub[1] + 2E#sub[1] + 4E#sub[2] 共 12 个表示;
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其中简并表示(E1 和 E2)的拉曼张量的形状可以通过进一步考虑在 C#sub[2v] 点群中的表示来确定,如表所示。
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其中,B#sub[1] 模式具有零拉曼张量,不参与拉曼散射;
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其它表示的模式具有非零拉曼张量分量,可能可以在适当的偏振配置下在拉曼实验中观察到。
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然而,模式是否足够强以在实验中可见取决于其拉曼张量分量的大小,而仅通过对称性分析无法确定这些大小。
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// Representation of these 18 phonons, and the shape of their Raman tensors could be determined in advance.)
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Phonons at the #sym.Gamma point satisfy the C#sub[6v] point group symmetry,
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@@ -43,7 +43,23 @@
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- [x] 中文
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- [x] 英文
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- [x] 调整语言
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- [ ] 弱极性
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- [/] 弱极性
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- [x] Gamma 近似
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- [x] 中文
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- [x] 英文
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- [ ] 调整语言
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- [ ] 表示
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- [ ] 中文
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- [ ] 英文
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- [ ] 调整语言
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- [ ] 估算拉曼张量
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- [ ] 中文
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- [ ] 英文
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- [ ] 调整语言
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- [ ] 第一性原理计算
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- [ ] 中文
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- [ ] 英文
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- [ ] 调整语言
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- [ ] 杂项
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- [ ] N#sub[C]C#sub[Si] 有什么好处?
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- [ ] 是否有其它需要研究的点缺陷?
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