From 8b0611979afe889e5cb61d7a95065ccc52e982af Mon Sep 17 00:00:00 2001 From: chn Date: Fri, 4 Jul 2025 11:02:38 +0800 Subject: [PATCH] --- paper/ref.bib | 24 +++++++++++++++++ paper/result/perfect/non-polar/default.typ | 30 +++++++++++----------- paper/todo.typ | 18 ++++++++++++- 3 files changed, 56 insertions(+), 16 deletions(-) diff --git a/paper/ref.bib b/paper/ref.bib index 62ddf5f..5a8836d 100644 --- a/paper/ref.bib +++ b/paper/ref.bib @@ -683,3 +683,27 @@ CNKICite: 6}, pages = {205202}, file = {PDF:/home/chn/Zotero/storage/5U5BPLCX/Gerstmann et al. - 2003 - Formation and annealing of nitrogen-related complexes in SiC.pdf:application/pdf}, } + +@article{_n-sic_2008, + title = {n-{SiC的电子拉曼散射及二级拉曼谱研究}}, + issn = {1000-3290}, + url = {https://kns.cnki.net/KCMS/detail/detail.aspx?dbcode=CJFQ&dbname=CJFD2008&filename=WLXB200805091}, + abstract = {研究了利用离子注入法得到的掺氮n-SiC拉曼光谱.理论线形分析表明,与4H-SiC相比,6H-SiC中LO声子等离子体激元耦合模(LOPC模)拉曼位移随自由载流子浓度变化较小.514.5nm激发光下得到的电子拉曼散射光谱表明,k位处由1s(A1)到1s(E)的能谷轨道跃迁带来的拉曼谱6H-SiC中有四条,4H-SiC中有二条;高频630.3及635cm-1处观察到的谱线被认为与深能级缺陷有关.最后,利用纤锌矿型结构二级拉曼散射选择定则指认了6H-及4H-SiC二级拉曼谱.}, + language = {zh-CN}, + number = {5}, + urldate = {2025-07-04}, + journal = {物理学报}, + author = {{韩茹} and {杨银堂} and {柴常春}}, + year = {2008}, + note = {foundation: 国家部委预研资助项目(批准号:51308030201)资助的课题{\textasciitilde}{\textasciitilde}; +download: 403 +album: 基础科学 +CLC: O472 +dbcode: CJFQ +dbname: CJFD2008 +filename: WLXB200805091 +CNKICite: 6}, + keywords = {倍频谱, 电子拉曼散射, 碳化硅, 轨道能谷分裂}, + pages = {3182--3187}, + file = {n-SiC的电子拉曼散射及二级拉曼谱研究:/home/chn/Zotero/storage/2PYQG2SP/n-SiC的电子拉曼散射及二级拉曼谱研究.pdf:application/pdf}, +} diff --git a/paper/result/perfect/non-polar/default.typ b/paper/result/perfect/non-polar/default.typ index 1b15baa..cfde06e 100644 --- a/paper/result/perfect/non-polar/default.typ +++ b/paper/result/perfect/non-polar/default.typ @@ -1,24 +1,24 @@ === Phonons with Negligible Polarities -我们用 gamma 点的声子来近似弱极性的声子。 +用 gamma 点的声子来近似。 -Gamma 点的声子被用于 +Gamma 点的声子被用于近似参与拉曼散射的弱极性声子,无论入射配置。 +这个近似是因为这些声子的色散曲线在 Gamma 点附近连续且非常接近 Gamma 点,并且已经被广泛使用。 -// We investigate phonons at Gamma instead of the exact location near Gamma. -Phonons at the #sym.Gamma point were used - to approximate negligible-polar phonons that participating in Raman processes +Phonons at the #sym.Gamma point were used to approximate negligible-polar phonons, regardless of the wavevector of the incident and scattered light. -This approximation is widely adopted (cite) and justified by the fact that, - although the phonons participating in Raman processes are not these strictly located at the #sym.Gamma point, - they are very close to the #sym.Gamma point in reciprocal space - (about 0.01 nm#super[-1] in back-scattering configurations with 532 nm laser light, - which corresponds to only 1% of the smallest reciprocal lattice vector of 4H-SiC, - see orange dotted line in @figure-discont), - and their dispersion at #sym.Gamma point is continuous with vanishing derivatives. -Therefore, negligible-polar phonons involved in Raman processes - have nearly indistinguishable properties from those at the #sym.Gamma point. +This approximation is based on the fact that + the dispersion of these phonons is continuous and very close to the #sym.Gamma point, + and has been widely adopted in the literature @_n-sic_2008. -gamma 点处 18 个声子的表示。它们的拉曼张量的形状可以确定,但大小无法确定。 +18 个声子属于 12 个表示。拉曼张量的形状可以确定,大小不能。 + +这些声子的拉曼张量的形状可以通过对称性分析来确定。 +Gamma 点声子满足 C#sub[6v] 点群对称性,18 个模式包含了 2A#sub[1] + 4B#sub[1] + 2E#sub[1] + 4E#sub[2] 共 12 个表示; + 其中简并表示(E1 和 E2)的拉曼张量的形状可以通过进一步考虑在 C#sub[2v] 点群中的表示来确定,如表所示。 +其中,B#sub[1] 模式具有零拉曼张量,不参与拉曼散射; + 其它表示的模式具有非零拉曼张量分量,可能可以在适当的偏振配置下在拉曼实验中观察到。 +然而,模式是否足够强以在实验中可见取决于其拉曼张量分量的大小,而仅通过对称性分析无法确定这些大小。 // Representation of these 18 phonons, and the shape of their Raman tensors could be determined in advance.) Phonons at the #sym.Gamma point satisfy the C#sub[6v] point group symmetry, diff --git a/paper/todo.typ b/paper/todo.typ index b0625b6..2f283fe 100644 --- a/paper/todo.typ +++ b/paper/todo.typ @@ -43,7 +43,23 @@ - [x] 中文 - [x] 英文 - [x] 调整语言 - - [ ] 弱极性 + - [/] 弱极性 + - [x] Gamma 近似 + - [x] 中文 + - [x] 英文 + - [ ] 调整语言 + - [ ] 表示 + - [ ] 中文 + - [ ] 英文 + - [ ] 调整语言 + - [ ] 估算拉曼张量 + - [ ] 中文 + - [ ] 英文 + - [ ] 调整语言 + - [ ] 第一性原理计算 + - [ ] 中文 + - [ ] 英文 + - [ ] 调整语言 - [ ] 杂项 - [ ] N#sub[C]C#sub[Si] 有什么好处? - [ ] 是否有其它需要研究的点缺陷?