test-typst/ref.bib

@@ -234,3 +234,110 @@
 	pages = {1029--1032},
 	file = {Harada and Murayama - 2022 - Observation of in-plane shear stress fields in off.pdf:/home/chn/Zotero/storage/X6LVEJRU/Harada and Murayama - 2022 - Observation of in-plane shear stress fields in off.pdf:application/pdf},
 }
+
+@article{kudriavtsev_quantitative_2003,
+	title = {Quantitative {SIMS} analysis of {SiC}},
+	volume = {35},
+	copyright = {http://onlinelibrary.wiley.com/termsAndConditions\#vor},
+	issn = {0142-2421, 1096-9918},
+	url = {https://analyticalsciencejournals.onlinelibrary.wiley.com/doi/10.1002/sia.1561},
+	doi = {10.1002/sia.1561},
+	abstract = {Abstract
+            
+              We performed a systematic study of ion‐implanted 6H‐SiC standards to find the optimal regimes for SIMS analysis. Relative sensitivity factors (RSFs) were acquired for operating conditions typical of practical SIMS applications. The experimental SiC RSFs were compared with those found for silicon:
+              1
+              the matrix effect was insignificant in most cases. It was found that the SiO
+              −
+              cluster ion cannot represent correctly the real oxygen distribution in SiC. The physics of the effect is discussed. Copyright © 2003 John Wiley \& Sons, Ltd.},
+	language = {en},
+	number = {6},
+	urldate = {2025-06-03},
+	journal = {Surface and Interface Analysis},
+	author = {Kudriavtsev, Yu. and Villegas, A. and Godines, A. and Asomoza, R. and Usov, I.},
+	month = jun,
+	year = {2003},
+	pages = {491--495},
+	file = {PDF:/home/chn/Zotero/storage/GNZIFH2D/Kudriavtsev et al. - 2003 - Quantitative SIMS analysis of SiC.pdf:application/pdf},
+}
+
+@article{kim_characteristics_2024,
+	title = {Characteristics of the {Discoloration} {Switching} {Phenomenon} of {4H}-{SiC} {Single} {Crystals} {Grown} by {PVT} {Method} {Using} {ToF}-{SIMS} and {Micro}-{Raman} {Analysis}},
+	volume = {17},
+	copyright = {https://creativecommons.org/licenses/by/4.0/},
+	issn = {1996-1944},
+	url = {https://www.mdpi.com/1996-1944/17/5/1005},
+	doi = {10.3390/ma17051005},
+	abstract = {The discoloration switching appearing in the initial and final growth stages of 4H-silicon carbide (4H-SiC) single crystals grown using the physical vapor transport (PVT) technique was investigated. This phenomenon was studied, investigating the correlation with linear-type micropipe defects on the surface of 4H-SiC single crystals. Based on the experimental results obtained using time-of-flight secondary ion mass spectrometry (ToF-SIMS) and micro-Raman analysis, it was deduced that the orientation of the 4H-SiC c-axis causes an axial change that correlates with low levels of carbon. In addition, it was confirmed that the incorporation of additional elements and the concentrations of these doped impurity elements were the main causes of discoloration and changes in growth orientation. Overall, this work provides guidelines for evaluating the discoloration switching in 4H-SiC single crystals and contributes to a greater understanding of this phenomenon.},
+	language = {en},
+	number = {5},
+	urldate = {2025-06-03},
+	journal = {Materials},
+	author = {Kim, Seul-Ki and Kim, Hajun and Kim, Hyun Sik and Hong, Tae Eun and Lee, Younki and Jung, Eun Young},
+	month = feb,
+	year = {2024},
+	pages = {1005},
+	file = {PDF:/home/chn/Zotero/storage/JXDKH48U/Kim et al. - 2024 - Characteristics of the Discoloration Switching Phenomenon of 4H-SiC Single Crystals Grown by PVT Met.pdf:application/pdf},
+}
+
+@article{noguchi_comparative_2021,
+	title = {Comparative {Study} of {Hall} {Effect} {Mobility} in {Inversion} {Layer} of {4H}-{SiC} {MOSFETs} {With} {Nitrided} and {Phosphorus}-{Doped} {Gate} {Oxides}},
+	volume = {68},
+	copyright = {https://ieeexplore.ieee.org/Xplorehelp/downloads/license-information/IEEE.html},
+	issn = {0018-9383, 1557-9646},
+	url = {https://ieeexplore.ieee.org/document/9632361/},
+	doi = {10.1109/TED.2021.3125284},
+	abstract = {In this study, the inversion layer mobility characteristics in Si-face 4H silicon carbide (SiC) metaloxide-semiconductor field-effect transistors (MOSFETs) with nitrided and phosphorus-doped gate oxides were compared using Hall effect measurements. The inversion layer mobility was evaluated by applying a body bias and changing the temperature. The carrier scattering properties were determined for elevated temperatures (i.e., 473 K), at which point the impact of Coulomb scattering decreases and that of phonon scattering increases. The phonon-limited mobility of these MOSFETs was almost the same when plotted as a function of the effective normal electric field in the inversion layer, possibly representing the nature of the thermally grown SiO2/SiC interface. On the basis of this finding, the effect of phonon scattering was separated from the inversion layer mobility. The MOSFETs exhibited a remarkable difference in Coulomb scattering: the MOSFETs with phosphorus-doped gate oxide exhibited a more rapid increase in Coulomb-limited mobility with increasing surface carrier density than did the MOSFETs with nitride gate oxide. This resulted from the effective suppression of Coulomb scattering in the inversion layer, which is one of the reasons why phosphorus-doped gate oxide achieves higher inversion layer mobility than nitrided gate oxide. These results show that the inversion layer mobility of SiC MOSFETs can be modeled using a conventional framework of phonon, Coulomb, and surface roughness scattering. Therefore, the suppression of Coulomb scattering is key to further improving the inversion layer mobility of SiC MOSFETs.},
+	language = {en},
+	number = {12},
+	urldate = {2025-06-03},
+	journal = {IEEE Transactions on Electron Devices},
+	author = {Noguchi, Munetaka and Watanabe, Tomokatsu and Watanabe, Hiroshi and Kita, Koji and Miura, Naruhisa},
+	month = dec,
+	year = {2021},
+	pages = {6321--6329},
+	file = {PDF:/home/chn/Zotero/storage/WGL6FA4D/Noguchi et al. - 2021 - Comparative Study of Hall Effect Mobility in Inversion Layer of 4H-SiC MOSFETs With Nitrided and Pho.pdf:application/pdf},
+}
+
+@article{asada_hall_2016,
+	title = {Hall scattering factors in p-type {4H}-{SiC} with various doping concentrations},
+	volume = {9},
+	issn = {1882-0778, 1882-0786},
+	url = {https://iopscience.iop.org/article/10.7567/APEX.9.041301},
+	doi = {10.7567/APEX.9.041301},
+	abstract = {Abstract
+            
+              The Hall scattering factor (γ
+              H
+              ) in p-type 4H-SiC with various aluminum doping concentrations of 5.8 × 10
+              14
+              –7.1 × 10
+              18
+              cm
+              −3
+              was investigated from 300 to 900 K. γ
+              H
+              was determined by comparing the Hall coefficient with the theoretical carrier concentration derived from acceptor and donor concentrations obtained from secondary ion mass spectrometry and capacitance–voltage measurements. γ
+              H
+              decreased with increasing temperature or doping concentration; γ
+              H
+              = 1–0.4 for the doping concentration of 5.8 × 10
+              14
+              cm
+              −3
+              and γ
+              H
+              = 0.5–0.2 for the doping concentration of 7.1 × 10
+              18
+              cm
+              −3
+              . The dependence might be caused by the anisotropic and nonparabolic valence band structure of 4H-SiC.},
+	language = {en},
+	number = {4},
+	urldate = {2025-06-03},
+	journal = {Applied Physics Express},
+	author = {Asada, Satoshi and Okuda, Takafumi and Kimoto, Tsunenobu and Suda, Jun},
+	month = apr,
+	year = {2016},
+	pages = {041301},
+	file = {PDF:/home/chn/Zotero/storage/AXK4NKG7/Asada et al. - 2016 - Hall scattering factors in p-type 4H-SiC with various doping concentrations.pdf:application/pdf},
+}

test-typst/section/introduction.typ

@@ -15,7 +15,8 @@ However, the performance of 4H-SiC devices remains constrained by the presence o
     @miyanagi_annealing_2006 @iijima_correlation_2017.
 Furthermore,
   conventional methods for characterizing the doping properties of SiC
-    (such as secondary ion mass spectrometry (SIMS) and Hall effect measurements),
+    (such as secondary ion mass spectrometry (SIMS) @kudriavtsev_quantitative_2003 @kim_characteristics_2024
+    and Hall effect measurements @noguchi_comparative_2021 @asada_hall_2016),
   are destructive and time-consuming.
 Therefore, there is a pressing need to develop an in-situ and non-destructive characterization techniques.