344 lines
23 KiB
BibTeX
344 lines
23 KiB
BibTeX
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@article{demenet_tem_2005,
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title = {{TEM} observations of the coexistence of perfect and dissociated dislocations in {SiC} under high stress},
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volume = {2},
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issn = {1610-1634},
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url = {https://onlinelibrary.wiley.com/doi/10.1002/pssc.200460541},
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doi = {10.1002/pssc.200460541},
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language = {en},
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number = {6},
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urldate = {2022-07-04},
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journal = {Physica Status Solidi C: Current Topics in Solid State Physics},
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author = {Demenet, J. L. and Milhet, X. and Rabier, J.},
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month = apr,
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year = {2005},
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pages = {1987--1991},
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file = {Demenet 等。 - 2005 - TEM observations of the coexistence of perfect and.pdf:/home/chn/Zotero/storage/NHRXJKCK/Demenet 等。 - 2005 - TEM observations of the coexistence of perfect and.pdf:application/pdf},
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}
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@article{caldwell_driving_2010,
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title = {On the driving force for recombination-induced stacking fault motion in {4H}-{SiC}},
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volume = {108},
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issn = {0021-8979, 1089-7550},
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url = {http://aip.scitation.org/doi/10.1063/1.3467793},
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doi = {10.1063/1.3467793},
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language = {en},
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number = {4},
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urldate = {2022-09-20},
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journal = {Journal of Applied Physics},
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author = {Caldwell, Joshua D. and Stahlbush, Robert E. and Ancona, Mario G. and Glembocki, Orest J. and Hobart, Karl D.},
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month = aug,
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year = {2010},
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pages = {044503},
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file = {Caldwell 等。 - 2010 - On the driving force for recombination-induced sta.pdf:/home/chn/Zotero/storage/BRT4UJBM/Caldwell 等。 - 2010 - On the driving force for recombination-induced sta.pdf:application/pdf},
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}
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@article{iwahashi_extension_2017,
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title = {Extension of {Stacking} {Faults} in {4H}-{SiC} pn {Diodes} under a {High} {Current} {Pulse} {Stress}},
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volume = {897},
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issn = {1662-9752},
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url = {https://www.scientific.net/MSF.897.218},
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doi = {10.4028/www.scientific.net/MSF.897.218},
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abstract = {We investigated the expansion of stacking faults (SFs) under a high current pulse stress in detail. In situ observations showed bar-shaped SFs and two types of triangle SFs with different nucleation sites. The calculated partial dislocation velocity of the bar-shaped SFs was four times faster than that of the triangle SFs. The temperature dependence of the partial dislocation velocity was used to estimate activation energies of 0.23±0.02 eV for bar-shaped SFs and 0.27±0.05 eV for triangle SFs. We also compared the electrical characteristics before and after the stress. The forward voltage drop slightly increased by 0.05 V, and the leakage current did not increase.},
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language = {en},
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urldate = {2022-09-22},
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journal = {Materials Science Forum},
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author = {Iwahashi, Yohei and Miyazato, Masaki and Miyajima, Masaaki and Yonezawa, Yoshiyuki and Kato, Tomohisa and Fujiwara, Hirokazu and Hamada, Kimimori and Otsuki, Akihiro and Okumura, Hajime},
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month = may,
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year = {2017},
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pages = {218--221},
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file = {Iwahashi 等。 - 2017 - Extension of Stacking Faults in 4H-SiC pn Diodes u.pdf:/home/chn/Zotero/storage/8N5CPXAY/Iwahashi 等。 - 2017 - Extension of Stacking Faults in 4H-SiC pn Diodes u.pdf:application/pdf},
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}
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@article{okada_dependences_2018,
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title = {Dependences of contraction/expansion of stacking faults on temperature and current density in {4H}-{SiC} p-i-n diodes},
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volume = {57},
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issn = {0021-4922, 1347-4065},
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url = {https://iopscience.iop.org/article/10.7567/JJAP.57.061301},
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doi = {10.7567/JJAP.57.061301},
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language = {en},
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number = {6},
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urldate = {2022-09-22},
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journal = {Japanese Journal of Applied Physics},
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author = {Okada, Aoi and Nishio, Johji and Iijima, Ryosuke and Ota, Chiharu and Goryu, Akihiro and Miyazato, Masaki and Ryo, Mina and Shinohe, Takashi and Miyajima, Masaaki and Kato, Tomohisa and Yonezawa, Yoshiyuki and Okumura, Hajime},
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month = jun,
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year = {2018},
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pages = {061301},
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file = {Okada 等。 - 2018 - Dependences of contractionexpansion of stacking f.pdf:/home/chn/Zotero/storage/ZDPSUFFI/Okada 等。 - 2018 - Dependences of contractionexpansion of stacking f.pdf:application/pdf},
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}
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@article{iijima_correlation_2017,
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title = {Correlation between shapes of {Shockley} stacking faults and structures of basal plane dislocations in {4H}-{SiC} epilayers},
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volume = {97},
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issn = {1478-6435, 1478-6443},
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url = {https://www.tandfonline.com/doi/full/10.1080/14786435.2017.1350788},
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doi = {10.1080/14786435.2017.1350788},
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abstract = {Shockley-type stacking faults expanded in 4H–SiC epilayers induced by ultraviolet illumination were investigated using a photoluminescence imaging method, a photoluminescence mapping method and X-ray topography. After ultraviolet illumination, more than 30 patterns of Shockley-type stacking faults which expanded from perfect basal plane dislocations were observed by photoluminescence imaging. The initial basal plane dislocations were crystallographically classified, and individual shapes of expanded Shockley-type stacking faults were predicted. The correspondence between the predicted shapes and observed ones was discussed.},
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language = {en},
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number = {30},
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urldate = {2022-09-24},
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journal = {Philosophical Magazine},
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author = {Iijima, Akifumi and Kamata, Isaho and Tsuchida, Hidekazu and Suda, Jun and Kimoto, Tsunenobu},
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month = oct,
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year = {2017},
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pages = {2736--2752},
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file = {Iijima 等。 - 2017 - Correlation between shapes of Shockley stacking fa.pdf:/home/chn/Zotero/storage/2G3ZSIAB/Iijima 等。 - 2017 - Correlation between shapes of Shockley stacking fa.pdf:application/pdf},
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}
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@article{mahadik_ultraviolet_2012,
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title = {Ultraviolet {Photoluminescence} {Imaging} of {Stacking} {Fault} {Contraction} in {4H}-{SiC} {Epitaxial} {Layers}},
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volume = {717-720},
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issn = {1662-9752},
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url = {https://www.scientific.net/MSF.717-720.391},
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doi = {10.4028/www.scientific.net/MSF.717-720.391},
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abstract = {Shockley stacking fault (SSF) contraction in 4H-SiC was investigated, in-situ, under varying temperature and ultraviolet (UV) intensity. Contraction of single SSFs at room temperature was observed for the first time under low power UV excitation of 0.04 W/cm2. At temperatures above 150 oC, complete SSF contraction occurred for UV power at 0.2 W/cm2. In contrast to expansion, SSF contraction occurred in discrete jumps between pinning sites along existing C-core partials. Luminescence from the pinning sites suggest they may be local concentrations of point defects. Additionally, a change in the line direction of the Si-core partials by {\textasciitilde}25o off the {\textless}112¯ 0{\textgreater} direction was observed.},
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language = {en},
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urldate = {2022-09-24},
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journal = {Materials Science Forum},
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author = {Mahadik, Nadeemullah A. and Stahlbush, Robert E. and Caldwell, Joshua D. and Hobart, Karl D.},
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month = may,
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year = {2012},
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pages = {391--394},
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file = {Mahadik 等。 - 2012 - Ultraviolet Photoluminescence Imaging of Stacking .pdf:/home/chn/Zotero/storage/MYMBL92A/Mahadik 等。 - 2012 - Ultraviolet Photoluminescence Imaging of Stacking .pdf:application/pdf},
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}
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@article{miyanagi_annealing_2006,
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title = {Annealing effects on single {Shockley} faults in {4H}-{SiC}},
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volume = {89},
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issn = {0003-6951, 1077-3118},
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url = {http://aip.scitation.org/doi/10.1063/1.2234740},
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doi = {10.1063/1.2234740},
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language = {en},
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number = {6},
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urldate = {2022-09-24},
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journal = {Applied Physics Letters},
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author = {Miyanagi, Toshiyuki and Tsuchida, Hidekazu and Kamata, Isaho and Nakamura, Tomonori and Nakayama, Koji and Ishii, Ryousuke and Sugawara, Yoshitaka},
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month = aug,
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year = {2006},
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pages = {062104},
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file = {Miyanagi 等。 - 2006 - Annealing effects on single Shockley faults in 4H-.pdf:/home/chn/Zotero/storage/33N8FRKW/Miyanagi 等。 - 2006 - Annealing effects on single Shockley faults in 4H-.pdf:application/pdf},
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}
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@article{nishio_triangular_2020,
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title = {Triangular {Single} {Shockley} {Stacking} {Fault} {Analyses} on {4H}-{SiC} {PiN} {Diode} with {Forward} {Voltage} {Degradation}},
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volume = {49},
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issn = {0361-5235, 1543-186X},
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url = {https://link.springer.com/10.1007/s11664-020-08133-7},
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doi = {10.1007/s11664-020-08133-7},
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language = {en},
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number = {9},
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urldate = {2022-09-24},
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journal = {Journal of Electronic Materials},
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author = {Nishio, Johji and Okada, Aoi and Ota, Chiharu and Kushibe, Mitsuhiro},
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month = sep,
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year = {2020},
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pages = {5232--5239},
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file = {Nishio 等。 - 2020 - Triangular Single Shockley Stacking Fault Analyses.pdf:/home/chn/Zotero/storage/SPG9HXBM/Nishio 等。 - 2020 - Triangular Single Shockley Stacking Fault Analyses.pdf:application/pdf},
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}
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@article{okumura_present_2006,
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title = {Present {Status} and {Future} {Prospect} of {Widegap} {Semiconductor} {High}-{Power} {Devices}},
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volume = {45},
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issn = {0021-4922, 1347-4065},
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doi = {10.1143/JJAP.45.7565},
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language = {en},
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number = {10A},
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urldate = {2022-09-27},
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journal = {Japanese Journal of Applied Physics},
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author = {Okumura, Hajime},
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month = oct,
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year = {2006},
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pages = {7565--7586},
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file = {Okumura - 2006 - Present Status and Future Prospect of Widegap Semi.pdf:/home/chn/Zotero/storage/T26XT9I6/Okumura - 2006 - Present Status and Future Prospect of Widegap Semi.pdf:application/pdf},
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}
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@article{casady_status_1996,
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title = {Status of {Silicon} {Carbide} ({SiC}) as a {Wide}-bandgap {Emiconductor} for {High}-temperature {Applications}: a {Review}},
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volume = {39},
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doi = {10.1016/0038-1101(96)00045-7},
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language = {en},
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number = {10},
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journal = {Solid-State Electronics},
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author = {Casady, J B and Johnson, R W},
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month = feb,
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year = {1996},
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pages = {1409--1422},
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file = {Casady 和 Johnson - STATUS OF SILICON CARBIDE (SIC) AS A WlDE-BANDGAP .pdf:/home/chn/Zotero/storage/9UE6AB28/Casady 和 Johnson - STATUS OF SILICON CARBIDE (SIC) AS A WlDE-BANDGAP .pdf:application/pdf},
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}
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@article{tsuchida_recent_2018,
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title = {Recent advances in {4H}-{SiC} epitaxy for high-voltage power devices},
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volume = {78},
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issn = {13698001},
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doi = {10.1016/j.mssp.2017.11.003},
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abstract = {This paper reports recent advances in high-quality 4H-SiC epitaxial growth. The modern 4H-SiC epitaxial reactors, techniques to improve growth rates and large-diameter uniformity and reduce defect densities are discussed. A single-wafer vertical-type epitaxial reactor is newly developed and employed to grow 150 mm-diameter 4H-SiC epilayers. Using the reactor, high-speed wafer rotation is confirmed effective, both for enhancing growth rates and improving thickness and doping uniformities. Current levels of reducing particle-induced defects, in-grown stacking faults and basal plane dislocations and controlling carrier lifetimes are also reviewed.},
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language = {en},
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urldate = {2022-10-06},
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journal = {Materials Science in Semiconductor Processing},
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author = {Tsuchida, Hidekazu and Kamata, Isaho and Miyazawa, Tetsuya and Ito, Masahiko and Zhang, Xuan and Nagano, Masahiro},
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month = may,
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year = {2018},
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pages = {2--12},
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file = {Tsuchida 等。 - 2018 - Recent advances in 4H-SiC epitaxy for high-voltage.pdf:/home/chn/Zotero/storage/S596D8SX/Tsuchida 等。 - 2018 - Recent advances in 4H-SiC epitaxy for high-voltage.pdf:application/pdf},
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}
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@article{sun_selection_2022,
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title = {Selection of growth monomers on the {4H}-{SiC} (0001) atomic step surfaces: from the first-principles calculations to homo-epitaxy verification},
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volume = {606},
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issn = {01694332},
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shorttitle = {Selection of growth monomers on the {4H}-{SiC} (0001) atomic step surfaces},
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url = {https://linkinghub.elsevier.com/retrieve/pii/S0169433222024771},
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doi = {10.1016/j.apsusc.2022.154949},
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abstract = {Silicon carbide (SiC) has gained increased interest due to industry demand, especially for the 4H-SiC. Never theless, the ‘structural mutation’ in the 4H-SiC epitaxy is in urgent need of investigation and proper solution as the epitaxial thickness/wafer size increases. In this study, growth monomers in the step-flow mode were firstly investigated by the first-principles calculations for their dynamic and kinetic behaviours from an atomic level. The stability (by the comprehensive analyses of total energies, chemical potentials, and formation enthalpies) and the location of adsorptions were studied to reveal the dynamics. Meanwhile, the potential barrier of Si-Si interaction and phonon spectra were determined to understand the kinetics. We found monomers could be selected by controlling chemical potentials to make ordering growth. Secondly, two methods were thus inferred to select monomers to adsorb on atomic step surfaces in an orderly fashion and were verified in a six-inch epitaxy. Thirdly, a protocol was designed to restrict the extension of basal plane dislocation (BPD) from sub strates, a reduction greater than five orders of magnitude was gained but without time compromise in the thickfilm epitaxy. This study provided new insights into growth on the 4H-SiC (0001) atomic step surfaces and a new way of 4H-SiC homo-epitaxy.},
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language = {en},
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urldate = {2022-10-06},
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journal = {Applied Surface Science},
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author = {Sun, Yongqiang and Kang, Wenyu and Chen, Haonan and Chen, Xinlu and Dong, Yue and Lin, Wei and Kang, Junyong},
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month = dec,
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year = {2022},
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pages = {154949},
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file = {Sun et al. - 2022 - Selection of growth monomers on the 4H-SiC (0001) .pdf:/home/chn/Zotero/storage/VTGL4G53/Sun et al. - 2022 - Selection of growth monomers on the 4H-SiC (0001) .pdf:application/pdf},
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}
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@article{harada_suppression_2022,
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title = {Suppression of stacking fault expansion in a {4H}-{SiC} epitaxial layer by proton irradiation},
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volume = {12},
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issn = {2045-2322},
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doi = {10.1038/s41598-022-17060-y},
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abstract = {SiC bipolar degradation, which is caused by stacking fault expansion from basal plane dislocations in a SiC epitaxial layer or near the interface between the epitaxial layer and the substrate, is one of the critical problems inhibiting widespread usage of high-voltage SiC bipolar devices. In the present study, we investigated the stacking fault expansion behavior under UV illumination in a 4H-SiC epitaxial layer subjected to proton irradiation. X-ray topography observations revealed that proton irradiation suppressed stacking fault expansion. Excess carrier lifetime measurements showed that stacking fault expansion was suppressed in 4H-SiC epitaxial layers with proton irradiation at a fluence of 1 × 1011cm−2without evident reduction of the excess carrier lifetime. Furthermore, stacking fault expansion was also suppressed even after high-temperature annealing to recover the excess carrier lifetime. These results implied that passivation of dislocation cores by protons hinders recombination-enhanced dislocation glide motion under UV illumination.},
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language = {en},
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number = {1},
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urldate = {2022-10-06},
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journal = {Scientific Reports},
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author = {Harada, Shunta and Mii, Toshiki and Sakane, Hitoshi and Kato, Masashi},
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month = aug,
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year = {2022},
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pages = {13542},
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file = {Harada et al. - 2022 - Suppression of stacking fault expansion in a 4H-Si.pdf:/home/chn/Zotero/storage/VJ7H4G59/Harada et al. - 2022 - Suppression of stacking fault expansion in a 4H-Si.pdf:application/pdf},
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}
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@article{harada_observation_2022,
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title = {Observation of in-plane shear stress fields in off-axis {SiC} wafers by birefringence imaging},
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volume = {55},
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issn = {1600-5767},
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url = {https://scripts.iucr.org/cgi-bin/paper?S1600576722006483},
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doi = {10.1107/S1600576722006483},
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abstract = {For the nondestructive characterization of SiC wafers for power device application, birefringence imaging is one of the promising methods. In the present study, it is demonstrated that birefringence image contrast variation in off-axis SiC wafers corresponds to the in-plane shear stress under conditions slightly deviating from crossed Nicols according to both theoretical consideration and experimental observation. The current results indicate that the characterization of defects in SiC wafers is possible to achieve by birefringence imaging.},
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language = {en},
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number = {4},
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urldate = {2023-06-14},
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journal = {Journal of Applied Crystallography},
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author = {Harada, Shunta and Murayama, Kenta},
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month = aug,
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year = {2022},
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pages = {1029--1032},
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file = {Harada and Murayama - 2022 - Observation of in-plane shear stress fields in off.pdf:/home/chn/Zotero/storage/X6LVEJRU/Harada and Murayama - 2022 - Observation of in-plane shear stress fields in off.pdf:application/pdf},
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}
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@article{kudriavtsev_quantitative_2003,
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title = {Quantitative {SIMS} analysis of {SiC}},
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volume = {35},
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copyright = {http://onlinelibrary.wiley.com/termsAndConditions\#vor},
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issn = {0142-2421, 1096-9918},
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url = {https://analyticalsciencejournals.onlinelibrary.wiley.com/doi/10.1002/sia.1561},
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doi = {10.1002/sia.1561},
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abstract = {Abstract
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We performed a systematic study of ion‐implanted 6H‐SiC standards to find the optimal regimes for SIMS analysis. Relative sensitivity factors (RSFs) were acquired for operating conditions typical of practical SIMS applications. The experimental SiC RSFs were compared with those found for silicon:
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1
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the matrix effect was insignificant in most cases. It was found that the SiO
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−
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cluster ion cannot represent correctly the real oxygen distribution in SiC. The physics of the effect is discussed. Copyright © 2003 John Wiley \& Sons, Ltd.},
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language = {en},
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number = {6},
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urldate = {2025-06-03},
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journal = {Surface and Interface Analysis},
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author = {Kudriavtsev, Yu. and Villegas, A. and Godines, A. and Asomoza, R. and Usov, I.},
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month = jun,
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year = {2003},
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pages = {491--495},
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file = {PDF:/home/chn/Zotero/storage/GNZIFH2D/Kudriavtsev et al. - 2003 - Quantitative SIMS analysis of SiC.pdf:application/pdf},
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}
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@article{kim_characteristics_2024,
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title = {Characteristics of the {Discoloration} {Switching} {Phenomenon} of {4H}-{SiC} {Single} {Crystals} {Grown} by {PVT} {Method} {Using} {ToF}-{SIMS} and {Micro}-{Raman} {Analysis}},
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volume = {17},
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copyright = {https://creativecommons.org/licenses/by/4.0/},
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issn = {1996-1944},
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url = {https://www.mdpi.com/1996-1944/17/5/1005},
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doi = {10.3390/ma17051005},
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abstract = {The discoloration switching appearing in the initial and final growth stages of 4H-silicon carbide (4H-SiC) single crystals grown using the physical vapor transport (PVT) technique was investigated. This phenomenon was studied, investigating the correlation with linear-type micropipe defects on the surface of 4H-SiC single crystals. Based on the experimental results obtained using time-of-flight secondary ion mass spectrometry (ToF-SIMS) and micro-Raman analysis, it was deduced that the orientation of the 4H-SiC c-axis causes an axial change that correlates with low levels of carbon. In addition, it was confirmed that the incorporation of additional elements and the concentrations of these doped impurity elements were the main causes of discoloration and changes in growth orientation. Overall, this work provides guidelines for evaluating the discoloration switching in 4H-SiC single crystals and contributes to a greater understanding of this phenomenon.},
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language = {en},
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number = {5},
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urldate = {2025-06-03},
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journal = {Materials},
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author = {Kim, Seul-Ki and Kim, Hajun and Kim, Hyun Sik and Hong, Tae Eun and Lee, Younki and Jung, Eun Young},
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month = feb,
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year = {2024},
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pages = {1005},
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file = {PDF:/home/chn/Zotero/storage/JXDKH48U/Kim et al. - 2024 - Characteristics of the Discoloration Switching Phenomenon of 4H-SiC Single Crystals Grown by PVT Met.pdf:application/pdf},
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}
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@article{noguchi_comparative_2021,
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title = {Comparative {Study} of {Hall} {Effect} {Mobility} in {Inversion} {Layer} of {4H}-{SiC} {MOSFETs} {With} {Nitrided} and {Phosphorus}-{Doped} {Gate} {Oxides}},
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volume = {68},
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copyright = {https://ieeexplore.ieee.org/Xplorehelp/downloads/license-information/IEEE.html},
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issn = {0018-9383, 1557-9646},
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url = {https://ieeexplore.ieee.org/document/9632361/},
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doi = {10.1109/TED.2021.3125284},
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abstract = {In this study, the inversion layer mobility characteristics in Si-face 4H silicon carbide (SiC) metaloxide-semiconductor field-effect transistors (MOSFETs) with nitrided and phosphorus-doped gate oxides were compared using Hall effect measurements. The inversion layer mobility was evaluated by applying a body bias and changing the temperature. The carrier scattering properties were determined for elevated temperatures (i.e., 473 K), at which point the impact of Coulomb scattering decreases and that of phonon scattering increases. The phonon-limited mobility of these MOSFETs was almost the same when plotted as a function of the effective normal electric field in the inversion layer, possibly representing the nature of the thermally grown SiO2/SiC interface. On the basis of this finding, the effect of phonon scattering was separated from the inversion layer mobility. The MOSFETs exhibited a remarkable difference in Coulomb scattering: the MOSFETs with phosphorus-doped gate oxide exhibited a more rapid increase in Coulomb-limited mobility with increasing surface carrier density than did the MOSFETs with nitride gate oxide. This resulted from the effective suppression of Coulomb scattering in the inversion layer, which is one of the reasons why phosphorus-doped gate oxide achieves higher inversion layer mobility than nitrided gate oxide. These results show that the inversion layer mobility of SiC MOSFETs can be modeled using a conventional framework of phonon, Coulomb, and surface roughness scattering. Therefore, the suppression of Coulomb scattering is key to further improving the inversion layer mobility of SiC MOSFETs.},
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language = {en},
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||
number = {12},
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||
urldate = {2025-06-03},
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||
journal = {IEEE Transactions on Electron Devices},
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||
author = {Noguchi, Munetaka and Watanabe, Tomokatsu and Watanabe, Hiroshi and Kita, Koji and Miura, Naruhisa},
|
||
month = dec,
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||
year = {2021},
|
||
pages = {6321--6329},
|
||
file = {PDF:/home/chn/Zotero/storage/WGL6FA4D/Noguchi et al. - 2021 - Comparative Study of Hall Effect Mobility in Inversion Layer of 4H-SiC MOSFETs With Nitrided and Pho.pdf:application/pdf},
|
||
}
|
||
|
||
@article{asada_hall_2016,
|
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title = {Hall scattering factors in p-type {4H}-{SiC} with various doping concentrations},
|
||
volume = {9},
|
||
issn = {1882-0778, 1882-0786},
|
||
url = {https://iopscience.iop.org/article/10.7567/APEX.9.041301},
|
||
doi = {10.7567/APEX.9.041301},
|
||
abstract = {Abstract
|
||
|
||
The Hall scattering factor (γ
|
||
H
|
||
) in p-type 4H-SiC with various aluminum doping concentrations of 5.8 × 10
|
||
14
|
||
–7.1 × 10
|
||
18
|
||
cm
|
||
−3
|
||
was investigated from 300 to 900 K. γ
|
||
H
|
||
was determined by comparing the Hall coefficient with the theoretical carrier concentration derived from acceptor and donor concentrations obtained from secondary ion mass spectrometry and capacitance–voltage measurements. γ
|
||
H
|
||
decreased with increasing temperature or doping concentration; γ
|
||
H
|
||
= 1–0.4 for the doping concentration of 5.8 × 10
|
||
14
|
||
cm
|
||
−3
|
||
and γ
|
||
H
|
||
= 0.5–0.2 for the doping concentration of 7.1 × 10
|
||
18
|
||
cm
|
||
−3
|
||
. The dependence might be caused by the anisotropic and nonparabolic valence band structure of 4H-SiC.},
|
||
language = {en},
|
||
number = {4},
|
||
urldate = {2025-06-03},
|
||
journal = {Applied Physics Express},
|
||
author = {Asada, Satoshi and Okuda, Takafumi and Kimoto, Tsunenobu and Suda, Jun},
|
||
month = apr,
|
||
year = {2016},
|
||
pages = {041301},
|
||
file = {PDF:/home/chn/Zotero/storage/AXK4NKG7/Asada et al. - 2016 - Hall scattering factors in p-type 4H-SiC with various doping concentrations.pdf:application/pdf},
|
||
}
|