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Analysis of surface diffusion of carbon- and nitrogen-containing molecules during homoepitaxial growth of 4H-SiC (0001) under silicon-rich conditions.md
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2024-04-28 11:29:08 +08:00
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Analysis of surface diffusion of carbon- and nitrogen-containing molecules during homoepitaxial growth of 4H-SiC (0001) under silicon-rich conditions