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陈浩南 2024-09-23 15:51:36 +08:00
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拉曼/Determination of the transport properties in 4H-SiC wafers by Raman scattering measurement.md Normal file
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# Determination of the transport properties in 4H-SiC wafers by Raman scattering measurement
## Introduction
通常测试外延层电学性质的方法是 Hall 效应或 C-V 曲线，但是这都需要接触样品，并且只能测量较大范围内的平均性质。
使用拉曼测试可以测试较小范围内的情况，并且不需要预先处理。

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拉曼/碳化硅载流子浓度的拉曼光谱表征研究.pdf (Stored with Git LFS) Normal file
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