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SiC-2nd-paper/paper/result/perfect/polar/default.typ
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=== Strong-polar Phonons
沿着不同方向入射的话,强声子的模式是不同的。
// 在半导体的极性声子模式中,原子间存在长距离的库伦相互作用,导致散射谱在 Gamma 附近不再连续(引用),如图中的彩色线所示。
// 这导致不同方向的入射/散射光的声子模式不同。
// 具体来说,当入射光/散射光沿着 z 方向时,起作用的是 A-Gamma 线上的声子模式(图中的左半边的橘线),它们适用于群 C6v。
// 这时会有一个 E1 模式TO振动方向在面内和一个 A1 模式LO沿 z 振动)。
// 而当沿着 y 方向入射时,起作用的是 Gamma-K 线上的声子模式(图中的右半边的橘线),它们不再适用于群 C6v而只适用于群 C2v
// 它会分裂成沿x、y、z 方向的三个声子模式(图中的右半边的蓝线),它们分别对应于群 C2v 的 A1、B1 和 B2 表示 TODO: 确认这个几个表示的名字。
// 若考虑到到入射光不是严格沿着 z 方向,而是有一个小的角度(例如 10 度),则此时有一个声子模式沿着 x 方向,另外两个声子模式则为 y-z 两个方向的混合。
// (没有在图上表示)
Strong-polar phonon modes caused by different incident light directions are different,
due to long-range Coulomb interactions between atoms in semiconductors,
showing discontinuity in the scattering spectra near the #sym.Gamma point (see @figure-discont).
For incident light propagating along the z direction (phonon modes on the A-#sym.Gamma line),
symmetry of C#sub[6v] point group applies and leading to two modes (two peeks in Raman spectra),
including an E#sub[1] mode (pink line in @figure-discont, vibration in-plane)
and an A#sub[1] mode (green line in @figure-discont, vibration along z-direction).
When the light is incident along other directions, symmetry in plane was broken and C#sub[6v] symmetry no longer holds,
and there will be three phonon modes in theory.
For example, when the light is incident along the y direction (phonon modes on the #{sym.Gamma}-K line),
symmetry of C#sub[2v] applies and three modes exist in dispersion curves,
including an A#sub[1] mode (green line in @figure-discont, vibration along z direction),
a B#sub[2] mode (blue line in @figure-discont, vibration along x direction),
and a B#sub[1] mode (red line in @figure-discont, vibration in y direction).
When the light is incident along a direction between z and y,
three phonon modes will exist, but vibration in the mixed direction.
实验发现的确是这样的。
Many Raman experiments on 4H-SiC with incident light along the z direction have observed two peaks.
However, no experiments have reported three peaks with incident light along other directions.
In our experiment, we found the third, and it satisfied properties we expected.
In our experiments, we found that the third peak only appears when focusing inside the sample.
// 我们预测随着入射方向偏移LO 峰会向着高频方向移动。此外,我们也注意到 LO 也会与载流子产生影响。
// 在 n 型半导体中LOPC 模式将代替 LO 模式;在 p 型半导体中LO 模式仍然单独存在,但它的半高宽会受到载流子浓度的影响。
#include "table-pol.typ"