调整图片

test-typst/main.typ

@@ -1,7 +1,12 @@
 #import "@preview/starter-journal-article:0.4.0": article, author-meta
 #import "@preview/tablem:0.2.0": tablem
 #set par.line(numbering: "1")
-
+#show figure.caption: it => {
+  set align(left)
+  set text(10pt)
+  show: box.with(width: 80%)
+  it
+}
 #show: article.with(
   title: "Article Title",
   authors: (
@@ -56,7 +61,7 @@ They could be probed by various experimental techniques,
 Among these techniques,
   Raman spectroscopy is the most commonly used method,
   as it provides non-destructive, non-contact, rapid and spatially localized measurement of phonons
-  that near the $Gamma$ point in reciprocal space.
+  that near the #sym.Gamma point in reciprocal space.
 Studies in Raman scattering of 4H-SiC have been conducted since as early as 1983
   and have been widely employed to identification of different SiC polytypes.
 
@@ -86,18 +91,25 @@ In this paper, we do some things. We do something for the first time.
 
 // 拉曼活性的声子模式对应于 Gamma 点附近的声子模式。
 // 根据这些声子模式的极性，我们将这些声子分成两类。
-Raman scattering peeks correspond to phonons located near the $Gamma$ point in reciprocal space.
+Raman scattering peeks correspond to phonons located near the #sym.Gamma point in reciprocal space.
 We classified these phonons into two categories based on their polarities:
   (i) negligible-polar phonons (i.e., phonons with no polarity or very weak polarity),
-    whose dispersion curves are continuous near the Γ point (as shown in @phonon),
+    whose dispersion curves are continuous near the #sym.Gamma point (as shown in @phonon),
     and for which the effect of polarity can be ignored in the Raman scattering process;
   and (ii) strong-polar phonons,
-    whose dispersion curves exhibit discontinuity near the Γ point (also shown in @phonon),
+    whose dispersion curves exhibit discontinuity near the #sym.Gamma point (also shown in @phonon),
     where the polarity gives rise to observable effects in the Raman spectra.
 
 #figure(
-  image("/画图/声子不连续/整体图.svg", width: 80%),
-  caption: [Weak- and None-polarized phonons near $Gamma$ point],
+  image("/画图/声子不连续/main.svg"),
+  caption: [
+    (a) Phonon dispersion of 4H-SiC along the A–#sym.Gamma–K high-symmetry path.
+      Gray lines represent negligible-polar phonon modes,
+      while colored lines indicate strong-polar phonon modes.
+    (b) Magnified view of the boxed region in (a).
+      The orange dashed lines mark the phonon wavevectors involved in Raman scattering
+        with incident light along the z- and y-directions.
+  ],
   placement: none
 )<phonon>
 
@@ -108,16 +120,16 @@ We classified these phonons into two categories based on their polarities:
 // 尽管拉曼过程中起作用的声子并不是那些严格在 Gamma 点的，
 //  但这些声子模式的散射谱在 Gamma 附近连续且导数为零，且波矢很小（在本文中大约 0.01 A，只有c轴的大约2%）。
 // 因此，它们的性质与 Gamma 点的声子模式区别不大。
-Phonons at the $Gamma$ point were used
+Phonons at the #sym.Gamma point were used
   to approximate negligible-polar phonons that participating in Raman processes.
 This approximation is widely adopted and justified by the fact that,
-  although the phonons participating in Raman processes are not these strictly located at the $Gamma$ point,
-  their dispersion near the $Gamma$ point is continuous with vanishing derivatives,
+  although the phonons participating in Raman processes are not these strictly located at the #sym.Gamma point,
+  their dispersion near the #sym.Gamma point is continuous with vanishing derivatives,
   and their wavevector is very small
     (about 0.01 AA in this paper, which corresponds to only 2% of the smallest reciprocal lattice vector of 4H-SiC).
   // TODO: 确认这个数值
 Therefore, negligible-polar phonons involved in Raman processes
-  have nearly indistinguishable properties from those at the $Gamma$ point.
+  have nearly indistinguishable properties from those at the #sym.Gamma point.
 
 // 4H-SiC 在 Gamma 有 21 个distinct phonons，其中极性较弱的有 18 个。这些模式对应于点群  $\mathrm{C_{6v}}$ 的 12 个表示（$\mathrm{3A_1+4B_1+3E_1+4E_2}$。
 // 对于非极性声子的拉曼散射，我们将使用 Gamma 点的声子模式来近似描述。