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@@ -304,33 +304,7 @@
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issn = {1882-0778, 1882-0786},
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url = {https://iopscience.iop.org/article/10.7567/APEX.9.041301},
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doi = {10.7567/APEX.9.041301},
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abstract = {Abstract
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The Hall scattering factor (γ
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H
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) in p-type 4H-SiC with various aluminum doping concentrations of 5.8 × 10
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14
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–7.1 × 10
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18
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cm
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−3
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was investigated from 300 to 900 K. γ
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H
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was determined by comparing the Hall coefficient with the theoretical carrier concentration derived from acceptor and donor concentrations obtained from secondary ion mass spectrometry and capacitance–voltage measurements. γ
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H
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decreased with increasing temperature or doping concentration; γ
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H
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= 1–0.4 for the doping concentration of 5.8 × 10
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14
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cm
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−3
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and γ
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H
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= 0.5–0.2 for the doping concentration of 7.1 × 10
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18
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cm
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−3
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. The dependence might be caused by the anisotropic and nonparabolic valence band structure of 4H-SiC.},
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abstract = {Abstract The Hall scattering factor (γ H ) in p-type 4H-SiC with various aluminum doping concentrations of 5.8 × 10 14 –7.1 × 10 18 cm −3 was investigated from 300 to 900 K. γ H was determined by comparing the Hall coefficient with the theoretical carrier concentration derived from acceptor and donor concentrations obtained from secondary ion mass spectrometry and capacitance–voltage measurements. γ H decreased with increasing temperature or doping concentration; γ H = 1–0.4 for the doping concentration of 5.8 × 10 14 cm −3 and γ H = 0.5–0.2 for the doping concentration of 7.1 × 10 18 cm −3 . The dependence might be caused by the anisotropic and nonparabolic valence band structure of 4H-SiC.},
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language = {en},
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number = {4},
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urldate = {2025-06-03},
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@@ -341,3 +315,166 @@
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pages = {041301},
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file = {PDF:/home/chn/Zotero/storage/AXK4NKG7/Asada et al. - 2016 - Hall scattering factors in p-type 4H-SiC with various doping concentrations.pdf:application/pdf},
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}
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@article{yan_single-defect_2021,
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title = {Single-defect phonons imaged by electron microscopy},
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volume = {589},
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issn = {0028-0836, 1476-4687},
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url = {https://www.nature.com/articles/s41586-020-03049-y},
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doi = {10.1038/s41586-020-03049-y},
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language = {en},
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number = {7840},
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urldate = {2025-06-03},
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journal = {Nature},
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author = {Yan, Xingxu and Liu, Chengyan and Gadre, Chaitanya A. and Gu, Lei and Aoki, Toshihiro and Lovejoy, Tracy C. and Dellby, Niklas and Krivanek, Ondrej L. and Schlom, Darrell G. and Wu, Ruqian and Pan, Xiaoqing},
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month = jan,
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year = {2021},
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pages = {65--69},
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file = {PDF:/home/chn/Zotero/storage/MWI4MNV9/Yan et al. - 2021 - Single-defect phonons imaged by electron microscopy.pdf:application/pdf},
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}
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@article{egoavil_atomic_2014,
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title = {Atomic resolution mapping of phonon excitations in {STEM}-{EELS} experiments},
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volume = {147},
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issn = {03043991},
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url = {https://linkinghub.elsevier.com/retrieve/pii/S0304399114000904},
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doi = {10.1016/j.ultramic.2014.04.011},
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abstract = {Atomically resolved electron energy-loss spectroscopy experiments are commonplace in modern aberration-corrected transmission electron microscopes. Energy resolution has also been increasing steadily with the continuous improvement of electron monochromators. Electronic excitations however are known to be delocalized due to the long range interaction of the charged accelerated electrons with the electrons in a sample. This has made several scientists question the value of combined high spatial and energy resolution for mapping interband transitions and possibly phonon excitation in crystals. In this paper we demonstrate experimentally that atomic resolution information is indeed available at very low energy losses around 100 meV expressed as a modulation of the broadening of the zero loss peak. Careful data analysis allows us to get a glimpse of what are likely phonon excitations with both an energy loss and gain part. These experiments confirm recent theoretical predictions on the strong localization of phonon excitations as opposed to electronic excitations and show that a combination of atomic resolution and recent developments in increased energy resolution will offer great benefit for mapping phonon modes in real space.},
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language = {en},
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urldate = {2025-06-03},
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journal = {Ultramicroscopy},
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author = {Egoavil, R. and Gauquelin, N. and Martinez, G.T. and Van Aert, S. and Van Tendeloo, G. and Verbeeck, J.},
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month = dec,
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year = {2014},
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pages = {1--7},
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file = {PDF:/home/chn/Zotero/storage/5YTDSVNA/Egoavil et al. - 2014 - Atomic resolution mapping of phonon excitations in STEM-EELS experiments.pdf:application/pdf},
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}
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@article{tong_temperature-dependent_2018,
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title = {Temperature-dependent infrared optical properties of {3C}-, {4H}- and {6H}-{SiC}},
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volume = {537},
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issn = {09214526},
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url = {https://linkinghub.elsevier.com/retrieve/pii/S092145261830142X},
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doi = {10.1016/j.physb.2018.02.023},
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abstract = {The temperature-dependent optical properties of cubic (3C) and hexagonal (4H and 6H) silicon carbide are investigated in the infrared range of 2–16 μm both by experimental measurements and numerical simulations. The temperature in experimental measurement is up to 593 K, while the numerical method can predict the optical properties at elevated temperatures. To investigate the temperature effect, the temperature-dependent damping parameter in the Lorentz model is calculated based on anharmonic lattice dynamics method, in which the harmonic and anharmonic interatomic force constants are determined from first-principles calculations. The infrared phonon modes of silicon carbide are determined from first-principles calculations. Based on first-principles calculations, the Lorentz model is parameterized without any experimental fitting data and the temperature effect is considered. In our investigations, we find that the increasing temperature induces a small reduction of the reflectivity in the range of 10–13 μm. More importantly, it also shows that our first-principles calculations can predict the infrared optical properties at high-temperature effectively which is not easy to be obtained through experimental measurements.},
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language = {en},
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urldate = {2025-06-03},
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journal = {Physica B: Condensed Matter},
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author = {Tong, Zhen and Liu, Linhua and Li, Liangsheng and Bao, Hua},
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month = may,
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year = {2018},
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pages = {194--201},
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file = {PDF:/home/chn/Zotero/storage/RISQQUQJ/Tong et al. - 2018 - Temperature-dependent infrared optical properties of 3C-, 4H- and 6H-SiC.pdf:application/pdf},
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}
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@article{pluchery_infrared_2012,
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title = {Infrared spectroscopy characterization of {3C}–{SiC} epitaxial layers on silicon},
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volume = {45},
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issn = {0022-3727, 1361-6463},
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url = {https://iopscience.iop.org/article/10.1088/0022-3727/45/49/495101},
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doi = {10.1088/0022-3727/45/49/495101},
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abstract = {We have measured the transmission Fourier transform infrared spectra of cubic silicon carbide (3C–SiC polytype) epitaxial layer with a 20 µm thickness on a 200 µm thick silicon substrate. Spectra were recorded in the 400–4000 cm−1 wavenumber range. A novel approach of IR spectra computations based on the recursion capability of the C programming language is presented on the basis of polarized light propagation in layered media using generalized Fresnel’s equations. The complex refractive indices are the only input parameters. A remarkable agreement is found between all of the experimental SiC and Si spectral features and the calculated spectra. A comprehensive assignment of (i) the two fundamental transverse optical (TO) (790 cm−1) and longitudinal optical (LO) (970 cm−1) phonon modes of 3C–SiC, (ii) with their overtones (1522–1627 cm−1) and (iii) the two-phonon optical-acoustical summation bands (1311–1409 cm−1) is achieved on the basis of available literature data. This approach allows sorting out the respective contributions of the Si substrate and SiC upper layer. Such calculations can be applied to any medium, provided that the complex refractive index data are known.},
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language = {en},
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number = {49},
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urldate = {2025-06-03},
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journal = {Journal of Physics D: Applied Physics},
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author = {Pluchery, Olivier and Costantini, Jean-Marc},
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month = dec,
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year = {2012},
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pages = {495101},
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file = {PDF:/home/chn/Zotero/storage/MV3Y48T4/Pluchery and Costantini - 2012 - Infrared spectroscopy characterization of 3C–SiC epitaxial layers on silicon.pdf:application/pdf},
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}
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@article{feldman_phonon_1968,
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title = {Phonon {Dispersion} {Curves} by {Raman} {Scattering} in {SiC}, {Polytypes} 3 {C} , 4 {H} , 6 {H} , 1 5 {R} , and 2 1 {R}},
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volume = {173},
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copyright = {http://link.aps.org/licenses/aps-default-license},
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issn = {0031-899X},
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url = {https://link.aps.org/doi/10.1103/PhysRev.173.787},
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doi = {10.1103/PhysRev.173.787},
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language = {en},
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number = {3},
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urldate = {2025-06-03},
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journal = {Physical Review},
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author = {Feldman, D. W. and Parker, James H. and Choyke, W. J. and Patrick, Lyle},
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month = sep,
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year = {1968},
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pages = {787--793},
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file = {PDF:/home/chn/Zotero/storage/AYLRJSTD/Feldman et al. - 1968 - Phonon Dispersion Curves by Raman Scattering in SiC, Polytypes 3 C , 4 H , 6 H , 1 5 R , and 2 1 R.pdf:application/pdf},
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}
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@article{nakashima_raman_2013,
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title = {Raman intensity profiles of zone-folded modes in {SiC}: {Identification} of stacking sequence of {10H}-{SiC}},
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volume = {114},
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issn = {0021-8979, 1089-7550},
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shorttitle = {Raman intensity profiles of zone-folded modes in {SiC}},
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url = {https://pubs.aip.org/jap/article/114/19/193510/992087/Raman-intensity-profiles-of-zone-folded-modes-in},
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doi = {10.1063/1.4828996},
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abstract = {Raman intensity profiles are measured for 10H-SiC crystals, for which various zone-folded phonon modes are observed. Raman intensity profiles are calculated based on a bond polarizability model assuming several stacking sequences for the 10H polytype using a linear chain model. Among several candidates for the stacking sequences, the 3322 stacking structure provides the best-fit profile for experimental spectral profiles. The hexagonality value of 0.4 predicted from the stacking sequence of this polytype is consistent with that derived from the frequency splitting between the experimental A1 and E-type transverse optical modes. This fact is consistent with an empirical rule that the value of the reduced wavevector for the strongest folded transverse acoustic and optical modes are equal to the hexagonality of the polytype. In the present analysis of the Raman intensity profiles, the calculated intensity profiles for specified folded transverse optical modes are found to be relatively strong and strikingly dependent on force-field parameters in α-SiC that consists of the mixture of the cubic and hexagonal stacking structures. These force-field parameters can reproduce well the experimental Raman intensity profiles of various SiC polytypes including 10H-SiC.},
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language = {en},
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number = {19},
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urldate = {2025-06-03},
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journal = {Journal of Applied Physics},
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author = {Nakashima, S. and Tomita, T. and Kuwahara, N. and Mitani, T. and Tomobe, M. and Nishizawa, S. and Okumura, H.},
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month = nov,
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year = {2013},
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pages = {193510},
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file = {PDF:/home/chn/Zotero/storage/PAGC4NNX/Nakashima et al. - 2013 - Raman intensity profiles of zone-folded modes in SiC Identification of stacking sequence of 10H-SiC.pdf:application/pdf},
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}
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@article{guo_characterization_2012,
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title = {Characterization of {Polytype} {Distributions} in {Nitrogen}-doped {6H}-{SiC} {Single} {Crystal} by {Raman} {Mapping}: {Characterization} of {Polytype} {Distributions} in {Nitrogen}-doped {6H}-{SiC} {Single} {Crystal} by {Raman} {Mapping}},
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volume = {27},
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issn = {1000-324X},
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shorttitle = {Characterization of {Polytype} {Distributions} in {Nitrogen}-doped {6H}-{SiC} {Single} {Crystal} by {Raman} {Mapping}},
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url = {http://pub.chinasciencejournal.com/article/getArticleRedirect.action?doiCode=10.3724/SP.J.1077.2012.00609},
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doi = {10.3724/SP.J.1077.2012.00609},
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abstract = {Nitrogen-doped 6H-SiC crystal with the diameter of 2-inch was grown along [0001] direction by physical vapor transport method. The spatial distribution of different polytypes such as 6H-SiC, 4H-SiC and 15R-SiC was characterized by mapping Raman spectra. The formation and evolution of different polytypes were investigated during the growth progress. 15R-SiC and 4H-SiC were observed in the as-grown 6H-SiC single crystal. Two different polytype regions are observed from the spatial distribution of different polytypes. One region originates from the growth interface of different polytypes. This region has higher nitrogen doping level and carrier concentration, and the area can become large during the growth process. The other region is dominated by 15R-SiC which appears in the main 6H-SiC due to the perturbation in growth temperature, pressure, etc. This region has less effect on the crystal quality, which could be inhibited by increasing the growth temperature.},
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language = {zh},
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number = {6},
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urldate = {2025-06-03},
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journal = {Journal of Inorganic Materials},
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author = {Guo, Xiao and Liu, Xue-Chao and Xin, Jun and Yang, Jian-Hua and Shi, Er-Wei},
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month = aug,
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year = {2012},
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pages = {609--614},
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file = {PDF:/home/chn/Zotero/storage/UD55XBUQ/Guo et al. - 2012 - Characterization of Polytype Distributions in Nitrogen-doped 6H-SiC Single Crystal by Raman Mapping.pdf:application/pdf},
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}
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@inproceedings{yan_study_2016,
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address = {Beijing},
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title = {Study of morphology defects in {4H}-{SiC} thick epitaxial layers grown on 4° off-axis {Si}-face substrates},
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isbn = {978-1-5090-4613-3},
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url = {https://ieeexplore.ieee.org/document/7803743/},
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doi = {10.1109/IFWS.2016.7803743},
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abstract = {The crystallographic structure and origins of morphology defects observed in 4°off-axis Si-face thick 4H-SiC epitaxial layers were investigated by Nomarski microscope and Raman spectroscopy. The growth direction of these morphology defects is consistent with the step-flow direction, all of the defect include a certain core, which indicates that the defects were originated from certain cores. These cores of the morphology defects contain 3C poly-crystalline grains based on the Raman spectroscopy characterization. The head part of the defect formed during epitaxial layers growth and their formation is attributed to the foreign particles. The formation mechanisms of these obtuse morphology defects are discussed based on our model. It can be concluded that foreign particles fall down on the surface during the 4H-SiC epitaxy that disturb the normal step flow mode and lead to the 3C-SiC nucleation, which is the origination of the morphology defects.},
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language = {en},
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urldate = {2025-06-03},
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booktitle = {2016 13th {China} {International} {Forum} on {Solid} {State} {Lighting}: {International} {Forum} on {Wide} {Bandgap} {Semiconductors} {China} ({SSLChina}: {IFWS})},
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publisher = {IEEE},
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author = {Yan, Guoguo and Zhang, Feng and Liu, Xingfang and Wang, Lei and Zhao, Wanshun and Sun, Guosheng and Zeng Key, Yiping},
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month = nov,
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year = {2016},
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pages = {6--10},
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file = {PDF:/home/chn/Zotero/storage/82RJ3M4G/Yan et al. - 2016 - Study of morphology defects in 4H-SiC thick epitaxial layers grown on 4° off-axis Si-face substrates.pdf:application/pdf},
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}
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@article{hundhausen_characterization_2008,
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title = {Characterization of defects in silicon carbide by {Raman} spectroscopy},
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volume = {245},
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copyright = {http://onlinelibrary.wiley.com/termsAndConditions\#vor},
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issn = {0370-1972, 1521-3951},
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url = {https://onlinelibrary.wiley.com/doi/10.1002/pssb.200844052},
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doi = {10.1002/pssb.200844052},
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abstract = {Abstract
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We demonstrate the application of Raman spectroscopy as an optical non‐contact method for the characterization of silicon carbide (SiC). The Raman spectra provide information about the polytype and thus can give direct information about microscopic inclusions of hexagonal polytypes in 3C‐SiC grown by chemical vapor deposition (CVD) after annealing at elevated temperatures. Polytype conversion sets in at a about 1700 °C and at higher temperatures eventually results in larger domains of 6H‐SiC where twin boundaries act as barriers against a complete polytype conversion. We study shallow donor states of phosphorus‐ and nitrogen‐doped SiC using low temperature electronic Raman spectroscopy. The various low frequency transitions observed in nitrogen doped SiC are assigned to the valley‐orbit transitions of electrons in the 1s‐ground states of donors that occupy inequivalent lattice sites. During vacuum annealing at elevated temperature graphitization of the SiC surface occurs. Raman spectroscopy is used to verify that under well controlled conditions a monoatomic graphene layer exists. We observe a phonon hardening of that layer compared to free standing graphene that we ascribe mainly to strain induced by different thermal expansion coefficients of graphite and SiC. (© 2008 WILEY‐VCH Verlag GmbH \& Co. KGaA, Weinheim)},
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language = {en},
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number = {7},
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urldate = {2025-06-03},
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journal = {physica status solidi (b)},
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author = {Hundhausen, M. and Püsche, R. and Röhrl, J. and Ley, L.},
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month = jul,
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year = {2008},
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pages = {1356--1368},
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file = {PDF:/home/chn/Zotero/storage/7SFXQFGR/Hundhausen et al. - 2008 - Characterization of defects in silicon carbide by Raman spectroscopy.pdf:application/pdf},
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}
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