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= Results and Discussion
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我们先讨论无缺陷的情况,再讨论有缺陷的情况。
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无缺陷的情况可以解释绝大多数拉曼峰,其它情况从拉曼中的小峰和峰的改变中看出。
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无缺陷的情况可以解释绝大多数拉曼信号,其它情况从拉曼中的小峰和峰的改变中看出。
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The phonons in defect-free 4H-SiC are discussed first,
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which could explain majority of the Raman signals.
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After that, we will discuss the defected case,
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which applies to the small peaks and modifications in the Raman peek corresponding to the non-defected case.
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// - 无缺陷:
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// 我们将声子分为两类,一类是极性比较弱的(18个),一类是比较强的(3个)。
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#show: checklist
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- [ ] 文本
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- [ ] introduction
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- [ ] method
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- [x] 几个外延片
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- [x] 中文
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- [x] 中文
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- [ ] 英文
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- [ ] 填充数据和引用
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- [ ] results
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- [ ] 总述
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- [ ] 杂项
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- [ ] N#sub[C]C#sub[Si] 有什么好处?
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- [ ] 实验
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