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= Results and Discussion
我们先讨论无缺陷的情况,再讨论有缺陷的情况。
无缺陷的情况可以解释绝大多数拉曼,其它情况从拉曼中的小峰和峰的改变中看出。
无缺陷的情况可以解释绝大多数拉曼信号,其它情况从拉曼中的小峰和峰的改变中看出。
The phonons in defect-free 4H-SiC are discussed first,
which could explain majority of the Raman signals.
After that, we will discuss the defected case,
which applies to the small peaks and modifications in the Raman peek corresponding to the non-defected case.
// - 无缺陷:
// 我们将声子分为两类一类是极性比较弱的18个一类是比较强的3个

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#show: checklist
- [ ] 文本
- [ ] introduction
- [ ] method
- [x] 几个外延片
- [x] 中文
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- [x] 中文
- [ ] 英文
- [ ] 填充数据和引用
- [ ] results
- [ ] 总述
- [ ] 杂项
- [ ] N#sub[C]C#sub[Si] 有什么好处?
- [ ] 实验