test-typst/section/method.typ

@@ -1 +1,4 @@
 Only back-scattering configurations were considered in this study.
+
+// 在略入射的过程中，角度的关系不大（即使是 60 度入射，和 90 度入射差别也不大）。因此我们按照折射角 20 度的结果计算。
+// 考虑到斜切，则大约是 24 度。

test-typst/section/perfect/polar/default.typ

@@ -27,12 +27,8 @@ When the light is incident along a direction between z and y,
 
 Many Raman experiments on 4H-SiC with incident light along the z direction have observed two peaks.
 However, no experiments have reported three peaks with incident light along other directions.
+In our experiment, we found the third, and it satisfied properties we expected.
 In our experiments, we found that the third peak only appears when focusing inside the sample.
-Based on its visibility under different polarizations and its distance from the main E2 peak,
-we identify it as the peak we are looking for.
-
-We also notice that the TO peak shifts slightly depending on the polarization direction.
-This can be explained by birefringence.
 
 // 我们预测，随着入射方向偏移，LO 峰会向着高频方向移动。此外，我们也注意到 LO 也会与载流子产生影响。
 // 在 n 型半导体中，LOPC 模式将代替 LO 模式；在 p 型半导体中，LO 模式仍然单独存在，但它的半高宽会受到载流子浓度的影响。