From 9d7ecf15e8ac320641211364b097a8bad44a780f Mon Sep 17 00:00:00 2001 From: chn Date: Wed, 28 May 2025 18:25:56 +0800 Subject: [PATCH] --- test-typst/section/method.typ | 3 +++ test-typst/section/perfect/polar/default.typ | 6 +----- 2 files changed, 4 insertions(+), 5 deletions(-) diff --git a/test-typst/section/method.typ b/test-typst/section/method.typ index 1037ee3..cf9b8ba 100644 --- a/test-typst/section/method.typ +++ b/test-typst/section/method.typ @@ -1 +1,4 @@ Only back-scattering configurations were considered in this study. + +// 在略入射的过程中，角度的关系不大（即使是 60 度入射，和 90 度入射差别也不大）。因此我们按照折射角 20 度的结果计算。 +// 考虑到斜切，则大约是 24 度。 diff --git a/test-typst/section/perfect/polar/default.typ b/test-typst/section/perfect/polar/default.typ index f3429df..8dbc83d 100644 --- a/test-typst/section/perfect/polar/default.typ +++ b/test-typst/section/perfect/polar/default.typ @@ -27,12 +27,8 @@ When the light is incident along a direction between z and y, Many Raman experiments on 4H-SiC with incident light along the z direction have observed two peaks. However, no experiments have reported three peaks with incident light along other directions. +In our experiment, we found the third, and it satisfied properties we expected. In our experiments, we found that the third peak only appears when focusing inside the sample. -Based on its visibility under different polarizations and its distance from the main E2 peak, -we identify it as the peak we are looking for. - -We also notice that the TO peak shifts slightly depending on the polarization direction. -This can be explained by birefringence. // 我们预测，随着入射方向偏移，LO 峰会向着高频方向移动。此外，我们也注意到 LO 也会与载流子产生影响。 // 在 n 型半导体中，LOPC 模式将代替 LO 模式；在 p 型半导体中，LO 模式仍然单独存在，但它的半高宽会受到载流子浓度的影响。