paper: 完成完美晶格的总述

paper/main.typ

@@ -1,7 +1,7 @@
 #import "@preview/starter-journal-article:0.4.0": article, author-meta
 
 #show: article.with(
-  title: "Article Title",
+  title: "My Great Paper",
   authors: (
     "Haonan Chen": author-meta(
       "xmu",
@@ -15,7 +15,9 @@
   affiliations: (
     "xmu": "Xiamen University",
   ),
-  abstract: [#lorem(100)],
+  abstract: [
+    Accept pls.
+  ],
   keywords: ("Typst", "Template", "Journal Article"),
 )
 

paper/result/default.typ

@@ -5,9 +5,8 @@
 
 Phonon modes in defect-free 4H-SiC were first analyzed,
   which account for the majority of the observed Raman signals.
-Subsequently, we address the effects of defects,
-  which manifest as additional minor peaks
-    and modifications to the Raman features associated with the defect-free 4H-SiC phonon modes.
+Subsequently, we address the effects of defects and charge carriers,
+  which manifest as additional minor peaks and modifications to the primary peaks in the Raman spectra.
 
 #include "perfect/default.typ"
 #include "defect/default.typ"

paper/result/perfect/default.typ

@@ -1,20 +1,18 @@
 == Phonons in Perfect 4H-SiC
 
-不同方向入射光的声子位置不同。
+不同方向入射光的声子位置不同。我们只研究 Gamma 附近的那些。
 
-声子的性质与它们在倒空间中的位置（即波矢）有关，而参与拉曼散射的声子波矢则由激光波长和拉曼入射配置（正入射、掠入射、边入射）决定。
-在我们的实验（绿光）中，参与拉曼散射的声子都位于 Gamma 点附近（距离仅约 0.005 埃-1），而与 Gamma 点的相对方向则根据入射配置而定。
+参与拉曼散射的声子的波矢等于入射光与散射光的波矢差。
+因此，在我们的实验（绿光和紫外光的背散射）中，参与拉曼散射的声子都位于 Gamma 点附近，且不同的入射方向对应的声子波矢不同。
 对于正入射，声子大致位于 Gamma-A 线上；对于边入射，声子大致位于 Gamma-K 线上。对于掠入射，声子不位于任何高对称线上。
 
-The properties of phonons depend on their positions in reciprocal space (i.e., their wavevectors),
-  and the wavevectors of phonons participating in a Raman scattering process
-  are determined by the Raman experiment configuration.
-In our experiments (back-scattering with 532 nm laser light),
-  the phonons involved are located very close to the #sym.Gamma point (approximately $5 times 10^(-3) angstrom$),
-  and direction relative to the #sym.Gamma point is determined by the incidence configurations.
-For normal and edge incidence,
-  the relevant phonons lie approximately along the #sym.Gamma–A and #sym.Gamma–K lines, respectively,
-  as illustrated in @figure-discont.
+The wavevectors of phonons participating in Raman scattering
+  equal to the difference between the wavevectors of the incident and scattered light.
+Thus, in our experiments (back-scattering with green and UV light),
+  the phonons involved are located very close to the #sym.Gamma point,
+  with various wavevectors determined by the incidence configurations.
+As illustrated in @figure-discont, in Raman experiments of normal and edge incidence,
+  the relevant phonons lie approximately at the #sym.Gamma–A and #sym.Gamma–K lines, respectively.
 For grazing incidence,
   the relevant phonons do not reside on any high-symmetry lines and are therefore not depicted in the figure.
 
@@ -26,16 +24,15 @@ For grazing incidence,
 我们将这 21 个声子模式分为两类：18 个极性可以忽略的声子模式（即极性为零或非常弱的声子），在拉曼散射过程中它们的电极性造成的效应可以忽略；
   和 3 个强极性声子模式，在拉曼光谱中电极性效应是可观测的。
 
-At each position near the #sym.Gamma point,
-  there are 21 phonon modes (counting degeneracies).
-These modes were categorized into two groups according to their electrical polarities:
+At each position near the #sym.Gamma point, there are 21 phonon modes with non-zero frequency (counting degeneracies).
+These phonons were categorized into two groups according to their electrical polarities:
   18 negligible-polar phonons (i.e., zero or very weak electrical polarity),
-    where atoms of the same species vibrate in opposite directions
+    where atoms of the same species vibrate in opposite directions,
     resulting in effective cancellation of electrical polarization during the Raman process
     (gray lines in @figure-discont);
   and three strong-polar phonons,
     where atoms of the same species vibrate in phase,
-    resulting in strong electrical polarization and observable effects in Raman spectra,
+    resulting in strong electrical polarization and observable effects in Raman spectra
     (colored lines in @figure-discont).
 
 #include "non-polar/default.typ"

paper/result/perfect/figure-discont.typ

@@ -2,15 +2,9 @@
   image("/画图/声子不连续/embed.svg"),
   caption: [
     (a) Phonon dispersion of 4H-SiC along the A–#sym.Gamma–K high-symmetry path.
-      Gray lines represent negligible-polar phonon modes,
-        while colored lines indicate strong-polar phonon modes.
-      The green, red and blue lines indicate the mode along the z-direction, y-direction and x-direction, respectively.
-      Along A-#sym.Gamma path, strong-polar modes along x- and y-directions are degenerated,
-        showing as a single purple line.
     (b) Magnified view of the boxed region in (a).
       The orange dashed lines mark the phonon wavevectors involved in Raman scattering
-        with incident light along the z- and y-directions.
-    (c) Magnified view of the boxed region in (b).
+        with green laser light under normal and edge incidence configurations.
   ],
   placement: none,
 )<figure-discont>