diff --git a/paper/main.typ b/paper/main.typ index c8a685a..af4e90e 100644 --- a/paper/main.typ +++ b/paper/main.typ @@ -1,7 +1,7 @@ #import "@preview/starter-journal-article:0.4.0": article, author-meta #show: article.with( - title: "Article Title", + title: "My Great Paper", authors: ( "Haonan Chen": author-meta( "xmu", @@ -15,7 +15,9 @@ affiliations: ( "xmu": "Xiamen University", ), - abstract: [#lorem(100)], + abstract: [ + Accept pls. + ], keywords: ("Typst", "Template", "Journal Article"), ) diff --git a/paper/result/default.typ b/paper/result/default.typ index dc08e6d..5f9c1d6 100644 --- a/paper/result/default.typ +++ b/paper/result/default.typ @@ -5,9 +5,8 @@ Phonon modes in defect-free 4H-SiC were first analyzed, which account for the majority of the observed Raman signals. -Subsequently, we address the effects of defects, - which manifest as additional minor peaks - and modifications to the Raman features associated with the defect-free 4H-SiC phonon modes. +Subsequently, we address the effects of defects and charge carriers, + which manifest as additional minor peaks and modifications to the primary peaks in the Raman spectra. #include "perfect/default.typ" #include "defect/default.typ" diff --git a/paper/result/perfect/default.typ b/paper/result/perfect/default.typ index 6b22b6f..f9392df 100644 --- a/paper/result/perfect/default.typ +++ b/paper/result/perfect/default.typ @@ -1,20 +1,18 @@ == Phonons in Perfect 4H-SiC -不同方向入射光的声子位置不同。 +不同方向入射光的声子位置不同。我们只研究 Gamma 附近的那些。 -声子的性质与它们在倒空间中的位置（即波矢）有关，而参与拉曼散射的声子波矢则由激光波长和拉曼入射配置（正入射、掠入射、边入射）决定。 -在我们的实验（绿光）中，参与拉曼散射的声子都位于 Gamma 点附近（距离仅约 0.005 埃-1），而与 Gamma 点的相对方向则根据入射配置而定。 +参与拉曼散射的声子的波矢等于入射光与散射光的波矢差。 +因此，在我们的实验（绿光和紫外光的背散射）中，参与拉曼散射的声子都位于 Gamma 点附近，且不同的入射方向对应的声子波矢不同。 对于正入射，声子大致位于 Gamma-A 线上；对于边入射，声子大致位于 Gamma-K 线上。对于掠入射，声子不位于任何高对称线上。 -The properties of phonons depend on their positions in reciprocal space (i.e., their wavevectors), - and the wavevectors of phonons participating in a Raman scattering process - are determined by the Raman experiment configuration. -In our experiments (back-scattering with 532 nm laser light), - the phonons involved are located very close to the #sym.Gamma point (approximately $5 times 10^(-3) angstrom$), - and direction relative to the #sym.Gamma point is determined by the incidence configurations. -For normal and edge incidence, - the relevant phonons lie approximately along the #sym.Gamma–A and #sym.Gamma–K lines, respectively, - as illustrated in @figure-discont. +The wavevectors of phonons participating in Raman scattering + equal to the difference between the wavevectors of the incident and scattered light. +Thus, in our experiments (back-scattering with green and UV light), + the phonons involved are located very close to the #sym.Gamma point, + with various wavevectors determined by the incidence configurations. +As illustrated in @figure-discont, in Raman experiments of normal and edge incidence, + the relevant phonons lie approximately at the #sym.Gamma–A and #sym.Gamma–K lines, respectively. For grazing incidence, the relevant phonons do not reside on any high-symmetry lines and are therefore not depicted in the figure. @@ -26,16 +24,15 @@ For grazing incidence, 我们将这 21 个声子模式分为两类：18 个极性可以忽略的声子模式（即极性为零或非常弱的声子），在拉曼散射过程中它们的电极性造成的效应可以忽略； 和 3 个强极性声子模式，在拉曼光谱中电极性效应是可观测的。 -At each position near the #sym.Gamma point, - there are 21 phonon modes (counting degeneracies). -These modes were categorized into two groups according to their electrical polarities: +At each position near the #sym.Gamma point, there are 21 phonon modes with non-zero frequency (counting degeneracies). +These phonons were categorized into two groups according to their electrical polarities: 18 negligible-polar phonons (i.e., zero or very weak electrical polarity), - where atoms of the same species vibrate in opposite directions + where atoms of the same species vibrate in opposite directions, resulting in effective cancellation of electrical polarization during the Raman process (gray lines in @figure-discont); and three strong-polar phonons, where atoms of the same species vibrate in phase, - resulting in strong electrical polarization and observable effects in Raman spectra, + resulting in strong electrical polarization and observable effects in Raman spectra (colored lines in @figure-discont). #include "non-polar/default.typ" diff --git a/paper/result/perfect/figure-discont.typ b/paper/result/perfect/figure-discont.typ index 2b4264d..4b599b6 100644 --- a/paper/result/perfect/figure-discont.typ +++ b/paper/result/perfect/figure-discont.typ @@ -2,15 +2,9 @@ image("/画图/声子不连续/embed.svg"), caption: [ (a) Phonon dispersion of 4H-SiC along the A–#sym.Gamma–K high-symmetry path. - Gray lines represent negligible-polar phonon modes, - while colored lines indicate strong-polar phonon modes. - The green, red and blue lines indicate the mode along the z-direction, y-direction and x-direction, respectively. - Along A-#sym.Gamma path, strong-polar modes along x- and y-directions are degenerated, - showing as a single purple line. (b) Magnified view of the boxed region in (a). The orange dashed lines mark the phonon wavevectors involved in Raman scattering - with incident light along the z- and y-directions. - (c) Magnified view of the boxed region in (b). + with green laser light under normal and edge incidence configurations. ], placement: none, ) diff --git a/画图/声子不连续/embed.svg b/画图/声子不连续/embed.svg index d5172ab..a996dd4 100644 --- a/画图/声子不连续/embed.svg +++ b/画图/声子不连续/embed.svg @@ -1,3 +1,3 @@ version https://git-lfs.github.com/spec/v1 -oid sha256:b8adade703512323dd047f177c7f5814742532f5defcb42576a0344664c3d497 -size 614965 +oid sha256:3e675d85d8c8357068628c9f341347847cb15247c7cd3d01fb9e9b5ef66e746d +size 362190 diff --git a/画图/声子不连续/main.svg b/画图/声子不连续/main.svg index e2e6810..7702232 100644 --- a/画图/声子不连续/main.svg +++ b/画图/声子不连续/main.svg @@ -1,3 +1,3 @@ version https://git-lfs.github.com/spec/v1 -oid sha256:4fe2a73d591b053db1a729fb61c7145619cc5a219d037d41478fd2a45a8175a0 -size 94855 +oid sha256:a4f8d3088a0b96984095cf9a5dd18d9e7dfc0ddd9fc06c525fa76e155d261fa6 +size 95352