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paper: 完成完美晶格的总述

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陈浩南
2025-09-02 11:11:28 +08:00
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paper/result/default.typ
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@@ -5,9 +5,8 @@
Phonon modes in defect-free 4H-SiC were first analyzed,
which account for the majority of the observed Raman signals.
Subsequently, we address the effects of defects,
which manifest as additional minor peaks
and modifications to the Raman features associated with the defect-free 4H-SiC phonon modes.
Subsequently, we address the effects of defects and charge carriers,
which manifest as additional minor peaks and modifications to the primary peaks in the Raman spectra.
#include "perfect/default.typ"
#include "defect/default.typ"