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2025-07-01 20:58:06 +08:00
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4 changed files with 19 additions and 39 deletions

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在我们的实验(绿光)中,参与拉曼散射的声子都位于 Gamma 点附近(距离仅 xxx 埃),而与 Gamma 点的相对方向则根据入射配置而定。
对于正入射,声子大致位于 Gamma-A 线上;对于边入射,声子大致位于 Gamma-K 线上。对于掠入射,声子不位于任何高对称线上。
Properties of phonons depend on their positions in reciprocal space (i.e., wavevectors),
The properties of phonons depend on their positions in reciprocal space (i.e., their wavevectors),
and the wavevectors of phonons participating in a Raman scattering process
are determined by the Raman experiment configuration.
In our experiments (back-scattering with 532 nm laser light),
phonons involved in Raman scattering are all located near the #sym.Gamma point
(about $5.13 times 10^(-3) angstrom$ from the #sym.Gamma point),
and their relative directions from the #sym.Gamma point depend on the incidence configurations.
the phonons involved are located very close to the #sym.Gamma point (approximately $5.13 times 10^(-3) angstrom$),
and direction relative to the #sym.Gamma point is determined by the incidence configurations.
For normal and edge incidence,
phonons participating in Raman process are approximately located along the #sym.GammaA and #sym.GammaK lines,
respectively, as illustrated in @figure-discont.
For grazing incidence, phonons are not located on any high-symmetry lines, and not shown in the figure.
the relevant phonons lie approximately along the #sym.GammaA and #sym.GammaK lines, respectively,
as illustrated in @figure-discont.
For grazing incidence,
the relevant phonons do not reside on any high-symmetry lines and are therefore not depicted in the figure.
#include "figure-discont.typ"
@@ -26,41 +26,17 @@ For grazing incidence, phonons are not located on any high-symmetry lines, and n
我们将这 21 个声子模式分为两类18 个极性可以忽略的声子模式(即极性为零或非常弱的声子),在拉曼散射过程中它们的电极性造成的效应可以忽略;
3 个强极性声子模式,在拉曼光谱中电极性效应是可观测的。
Phonons involved in Raman scattering under different incidence configurations (normal, grazing, and edge incidence)
are located at distinct positions in reciprocal space,
all close to the #sym.Gamma point.
The distance from the #sym.Gamma point is determined by the wavelength of the incident light,
and the direction from the #sym.Gamma point is determined by the incidence configurations.
At each such position near the #sym.Gamma point,
there exist 21 phonon modes (with degeneracies counted accordingly).
These modes can be categorized into two groups:
These modes were categorized into two groups according to their electrical polarities:
18 negligible-polar phonons (i.e., zero or very weak electrical polarity),
whose electrical polarity can be disregarded in the Raman scattering process;
in which same species atoms vibrate in opposite directions and the electrical cancellated with each other,
leading to negligible electrical polarity during Raman scattering process,
shown as gray lines in @figure-discont;
and three strong-polar phonons,
whose electrical polarity leads to observable effects in the Raman spectra.
这个分类是有意义的。从微观上讲,它也和原子的振动方向有关。
这个分类基于这样的事实:
4H-SiC 的原胞中,四个 Si 原子携带类似的正的 Born 有效电荷BEC
而四个 C 原子携带类似的负的 BEC @table-bec)。
18 个弱极性声子中,
两个 Si 原子的振动方向大致与另外两个 Si 原子相反,
C 原子也是如此,
导致宏观极性的抵消。
This classification is based on the fact that
the four Si atoms in the primitive cell of 4H-SiC carry similar positive Born effective charges (BECs),
and the four C atoms carry similar negative BECs (see @table-bec).
In the 18 negligible-polar phonons,
the vibrations of two Si atoms are approximately opposite to those of the other two Si atoms,
and the same holds for the C atoms,
leading to cancellations of macroscopic polarity.
In contrast, in the three strong-polar phonons,
all Si atoms vibrate in the same direction, and all the C atoms vibrate in the opposite direction,
resulting in a strong dipole moment.
#include "table-bec.typ"
in which all atoms of the same species vibrate in the same direction,
resulting in a strong dipole moment and observable electrical polarity in Raman spectra,
shown as colored lines in @figure-discont.
#include "non-polar/default.typ"
#include "polar/default.typ"

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#figure({
set text(size: 9pt);
set par(justify: false);
table(columns: 4, align: center + horizon,
table.cell(colspan: 2, rowspan: 2)[], table.cell(colspan: 2)[BEC (unit: |e|)], [x / y direction], [z direction],
table.cell(rowspan: 2)[Si atom], [A/C layer], [2.667], [2.626], [B layer], [2.674], [2.903],
table.cell(rowspan: 2)[C atom], [A/C layer], [-2.693], [-2.730], [B layer], [-2.648], [-2.800],
)},
caption: [
Born effective charges of Si and C atoms in A/B/C/B layers of 4H-SiC, calculated using first principle method.
],
placement: none,
)<table-bec>