diff --git a/paper/others/default.typ b/paper/others/default.typ index aa828e9..1d00d0e 100644 --- a/paper/others/default.typ +++ b/paper/others/default.typ @@ -1,4 +1,5 @@ = others +#include "table-bec.typ" #include "掺杂晶格变化.typ" #include "晶格变化导致的频率变化.typ" diff --git a/paper/result/perfect/table-bec.typ b/paper/others/table-bec.typ similarity index 100% rename from paper/result/perfect/table-bec.typ rename to paper/others/table-bec.typ diff --git a/paper/result/perfect/default.typ b/paper/result/perfect/default.typ index 526a097..74f45f5 100644 --- a/paper/result/perfect/default.typ +++ b/paper/result/perfect/default.typ @@ -6,17 +6,17 @@ 在我们的实验（绿光）中，参与拉曼散射的声子都位于 Gamma 点附近（距离仅 xxx 埃），而与 Gamma 点的相对方向则根据入射配置而定。 对于正入射，声子大致位于 Gamma-A 线上；对于边入射，声子大致位于 Gamma-K 线上。对于掠入射，声子不位于任何高对称线上。 -Properties of phonons depend on their positions in reciprocal space (i.e., wavevectors), +The properties of phonons depend on their positions in reciprocal space (i.e., their wavevectors), and the wavevectors of phonons participating in a Raman scattering process are determined by the Raman experiment configuration. In our experiments (back-scattering with 532 nm laser light), - phonons involved in Raman scattering are all located near the #sym.Gamma point - (about $5.13 times 10^(-3) angstrom$ from the #sym.Gamma point), - and their relative directions from the #sym.Gamma point depend on the incidence configurations. + the phonons involved are located very close to the #sym.Gamma point (approximately $5.13 times 10^(-3) angstrom$), + and direction relative to the #sym.Gamma point is determined by the incidence configurations. For normal and edge incidence, - phonons participating in Raman process are approximately located along the #sym.Gamma–A and #sym.Gamma–K lines, - respectively, as illustrated in @figure-discont. -For grazing incidence, phonons are not located on any high-symmetry lines, and not shown in the figure. + the relevant phonons lie approximately along the #sym.Gamma–A and #sym.Gamma–K lines, respectively, + as illustrated in @figure-discont. +For grazing incidence, + the relevant phonons do not reside on any high-symmetry lines and are therefore not depicted in the figure. #include "figure-discont.typ" @@ -26,41 +26,17 @@ For grazing incidence, phonons are not located on any high-symmetry lines, and n 我们将这 21 个声子模式分为两类：18 个极性可以忽略的声子模式（即极性为零或非常弱的声子），在拉曼散射过程中它们的电极性造成的效应可以忽略； 和 3 个强极性声子模式，在拉曼光谱中电极性效应是可观测的。 -Phonons involved in Raman scattering under different incidence configurations (normal, grazing, and edge incidence) - are located at distinct positions in reciprocal space, - all close to the #sym.Gamma point. -The distance from the #sym.Gamma point is determined by the wavelength of the incident light, - and the direction from the #sym.Gamma point is determined by the incidence configurations. At each such position near the #sym.Gamma point, there exist 21 phonon modes (with degeneracies counted accordingly). -These modes can be categorized into two groups: +These modes were categorized into two groups according to their electrical polarities: 18 negligible-polar phonons (i.e., zero or very weak electrical polarity), - whose electrical polarity can be disregarded in the Raman scattering process; + in which same species atoms vibrate in opposite directions and the electrical cancellated with each other, + leading to negligible electrical polarity during Raman scattering process, + shown as gray lines in @figure-discont; and three strong-polar phonons, - whose electrical polarity leads to observable effects in the Raman spectra. - -这个分类是有意义的。从微观上讲，它也和原子的振动方向有关。 - -这个分类基于这样的事实： - 在 4H-SiC 的原胞中，四个 Si 原子携带类似的正的 Born 有效电荷（BEC）， - 而四个 C 原子携带类似的负的 BEC（见 @table-bec）。 -在 18 个弱极性声子中， - 两个 Si 原子的振动方向大致与另外两个 Si 原子相反， - C 原子也是如此， - 导致宏观极性的抵消。 - -This classification is based on the fact that - the four Si atoms in the primitive cell of 4H-SiC carry similar positive Born effective charges (BECs), - and the four C atoms carry similar negative BECs (see @table-bec). -In the 18 negligible-polar phonons, - the vibrations of two Si atoms are approximately opposite to those of the other two Si atoms, - and the same holds for the C atoms, - leading to cancellations of macroscopic polarity. -In contrast, in the three strong-polar phonons, - all Si atoms vibrate in the same direction, and all the C atoms vibrate in the opposite direction, - resulting in a strong dipole moment. - -#include "table-bec.typ" + in which all atoms of the same species vibrate in the same direction, + resulting in a strong dipole moment and observable electrical polarity in Raman spectra, + shown as colored lines in @figure-discont. #include "non-polar/default.typ" #include "polar/default.typ" diff --git a/paper/todo.typ b/paper/todo.typ index 8314e9a..1172eb5 100644 --- a/paper/todo.typ +++ b/paper/todo.typ @@ -35,9 +35,12 @@ - [ ] 声子位置与实验对应 - [x] 中文 - [x] 英文 - - [ ] 调整语言 + - [x] 调整语言 - [ ] 调整画图 - [ ] 每个位置有 21 个模式 + - [x] 中文 + - [x] 英文 + - [ ] 调整语言 - [/] 无缺陷 - [ ] 总述 - [x] Gamma 附近有 21 个模式，我们将它们分为强极性和弱极性