paper/result/perfect/non-polar/default.typ

@@ -38,10 +38,20 @@ It should be noted, however, that the observability in Raman experiment depends
 
 我们提出了一个新的办法来估计拉曼张量大小。
 
-We propose a method to estimate the magnitudes of the Raman tensors of these phonons based on symmetry analysis.
-This approach is founded on the assumption that the change in polarizability induced by atomic displacements in 4H-SiC
-  is primarily determined by the first- and second-nearest neighbors of the atom and the sign of the atomic charge,
-  while other factors (mass, bond length, etc.) only have small contributions.
+我们提出了一个办法来快速估计拉曼张量的大小。
+这个办法基于对称性分析，并加入了以下假设：
+  每个原子对拉曼张量的贡献主要取决于第一近邻原子（它们的贡献记为 $a_i$），更远的原子则归结为小量（记为 $epsilon_i$ $eta_i$ $zeta_i$)。
+  此外，我们忽略了同一个振动模式中，同种原子振幅的绝对值的差异，只考虑它们振动方向的不同。
+因此，拉曼张量的大小可以在进一步的第一性原理计算之前给出，结果总结在表中。
+我们的结果表明，756 附近的峰应该比其它峰具有更强的拉曼强度。
+
+A method to estimate the magnitudes of the Raman tensors based on symmetry analysis was proposed.
+This approach is founded on the symmetry analysis and incorporates the assumption
+  that the majority contribution of each atom to the Raman tensor is determined by its nearest neighbors
+    (denoted as $a_i$),
+  while contributions from more distant atoms are considered small (denoted as $epsilon_i$, $eta_i$, and $zeta_i$).
+Additionally, we neglect the absolute differences in amplitudes of the same type of atoms in a phonon mode,
+    focusing only on their vibrational directions.
 Consequently, the Raman tensors of the calculated phonon modes can be estimated
     before additional first-principles computations (see appendix for details),
   and the results are summarized in @table-nopol.

paper/todo.typ

@@ -56,14 +56,18 @@
         - [/] 表格
           - [x] 大致内容
           - [ ] 可见性
-        - [ ] 估算拉曼张量
-          - [ ] 中文
-          - [ ] 英文
+        - [/] 估算拉曼张量
+          - [x] 中文
+          - [x] 英文
           - [ ] 调整语言
+          - [ ] 填充分离 Si C 结果的数据，对称分布小量
         - [ ] 第一性原理计算
           - [ ] 中文
           - [ ] 英文
           - [ ] 调整语言
+  - [ ] 附录
+    - [ ] 分离 Si
+    - [ ] 推导细节
   - [ ] 杂项
     - [ ] N#sub[C]C#sub[Si] 有什么好处？
     - [ ] 是否有其它需要研究的点缺陷？