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chn fe075a41f7 add book
2024-07-19 00:02:14 +08:00
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Composition, structure, and stability of RuO2 110 as a function of oxygen pressure.pdf
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2024-07-19 00:02:14 +08:00
Conversion of Shockley partial dislocation pairs from unexpandable to expandable combinations after epitaxial growth of 4H-SiC.pdf
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Core-shell InGaN GaN wires for flexible LEDs.pdf
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David Sholl, Janice A Steckel - Density functional theory_ A practical introduction-Wiley-Interscience (2009).pdf
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Electrochemical Methods Fundamentals and Applications.pdf
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Electron affinity and surface states of GaN m-plane facets: Implication for electronic self-passivation.pdf
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Elementary Electronic Structure.djvu
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GaN m-plane: Atomic structure, surface bands, and optical response.pdf
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III族窒化物有機金属エピタキシャル法における成長条件およびナノ構造形状に関する理論的検討.pdf
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2024-07-19 00:02:14 +08:00
Light-Induced Subnanometric Modulation of a Single-Molecule Electron Source.pdf
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Origin of Double-Rhombic Single Shockley Stacking Faults in 4H-SiC Epitaxial Layers.pdf
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Physics of Semiconductor Devices.pdf
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Role of Intrinsic Surface States in Efficiency Attenuation of GaN-Based Micro-Light-Emitting-Diodes.pdf
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Single Shockley Stacking Fault Expansion from Immobile Basal Plane Dislocations in 4H-SiC.pdf
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2024-07-19 00:02:14 +08:00
Sticking coefficient and SiC ratio of silicon carbide growth species on reconstructed 4H-SiC.pdf
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2024-07-19 00:02:14 +08:00
Transmission Electron Microscopy Study of Single Shockley Stacking Faults in 4H-SiC Expanded from Basal Plane Dislocation Segments Accompanied by Threading Edge Dislocations on Both Ends.pdf
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2024-07-19 00:02:14 +08:00