chn dc84a65b24

2025-06-22 18:50:47 +08:00

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Depth Profiling of Ion-Implanted 4H–SiC Using Confocal Raman Spectroscopy.pdf

2025-06-07 14:19:05 +08:00

n-SiC拉曼散射光谱的温度特性.pdf

2025-06-22 17:27:22 +08:00

Raman analysis of defects in n-type 4H-SiC.pdf

2025-06-22 18:50:47 +08:00

Raman intensity profiles of zone-folded modes in SiC Identification of stacking sequence of 10H-SiC.pdf

2025-06-09 15:03:23 +08:00

Spectroscopic analysis of electrical properties in polar semiconductors with over-damped plasmons.pdf

2025-06-05 14:42:48 +08:00

拉曼面扫描表征氮掺杂6H-SiC晶体多型分布.pdf

2025-06-09 10:47:34 +08:00

碳化硅载流子浓度的拉曼光谱表征研究.pdf

2025-06-04 15:56:54 +08:00