From eda6829f82089588b00919505f1dc97ddc6992c8 Mon Sep 17 00:00:00 2001 From: chn Date: Sun, 16 Mar 2025 22:21:13 +0800 Subject: [PATCH] add book --- ...carrier concentrations in doped β‐SiC crystals by Raman scattering.pdf | 0 声子/README.md | 5 +++++ 2 files changed, 5 insertions(+) rename 拉曼/Characterization of the free‐carrier concentrations in doped β‐SiC crystals by Raman scattering.pdf => 声子/LOPE拟合 1987 Characterization of the free‐carrier concentrations in doped β‐SiC crystals by Raman scattering.pdf (100%) diff --git a/拉曼/Characterization of the free‐carrier concentrations in doped β‐SiC crystals by Raman scattering.pdf b/声子/LOPE拟合 1987 Characterization of the free‐carrier concentrations in doped β‐SiC crystals by Raman scattering.pdf similarity index 100% rename from 拉曼/Characterization of the free‐carrier concentrations in doped β‐SiC crystals by Raman scattering.pdf rename to 声子/LOPE拟合 1987 Characterization of the free‐carrier concentrations in doped β‐SiC crystals by Raman scattering.pdf diff --git a/声子/README.md b/声子/README.md index 514df44..e5ebd19 100644 --- a/声子/README.md +++ b/声子/README.md @@ -37,3 +37,8 @@ * 通过带偏振的拉曼，可以研究这些峰的来源。 * stokes 和 anti-stokes 峰的比值有一个理论值 $\frac{I_\text{stokes}}{I_\text{anti-stokes}} = \exp(\frac{E}{kT})$。 * 6H 的 Si 面上长少层石墨烯，使用拉曼分析石墨烯的厚度和应变。 + +# Characterization of the free‐carrier concentrations in doped β-SiC crystals by Raman scattering + +应该是第一个拟合 N 掺杂的 3C-SiC 的 LOPC 峰的文章。 +它认为，应该可以观察到一个展宽的上峰，但这个上峰在文章中并没有被观察到。