diff --git a/拉曼/Characterization of the free‐carrier concentrations in doped β‐SiC crystals by Raman scattering.pdf b/声子/LOPE拟合 1987 Characterization of the free‐carrier concentrations in doped β‐SiC crystals by Raman scattering.pdf
similarity index 100%
rename from 拉曼/Characterization of the free‐carrier concentrations in doped β‐SiC crystals by Raman scattering.pdf
rename to 声子/LOPE拟合 1987 Characterization of the free‐carrier concentrations in doped β‐SiC crystals by Raman scattering.pdf
diff --git a/声子/README.md b/声子/README.md
index 514df44..e5ebd19 100644
--- a/声子/README.md
+++ b/声子/README.md
@@ -37,3 +37,8 @@
   * 通过带偏振的拉曼，可以研究这些峰的来源。
   * stokes 和 anti-stokes 峰的比值有一个理论值 $\frac{I_\text{stokes}}{I_\text{anti-stokes}} = \exp(\frac{E}{kT})$。
 * 6H 的 Si 面上长少层石墨烯，使用拉曼分析石墨烯的厚度和应变。
+
+# Characterization of the free‐carrier concentrations in doped β-SiC crystals by Raman scattering
+
+应该是第一个拟合 N 掺杂的 3C-SiC 的 LOPC 峰的文章。
+它认为，应该可以观察到一个展宽的上峰，但这个上峰在文章中并没有被观察到。