From 9a952cc76920afc04f8330f8e37a0c3d281e120e Mon Sep 17 00:00:00 2001 From: chn Date: Tue, 18 Mar 2025 13:55:31 +0800 Subject: [PATCH] add book --- 第二个论文/093506_1_online.pdf | 3 --- ... co-implantation: Raman spectroscopy analysis.pdf | 0 ...-defect phonons imaged by electron microscopy.pdf | 0 第二个论文/PhysRevB.6.2380.pdf | 4 ++-- 第二个论文/README.md | 24 +++++++++++++++++++ ...CAL FOLDED MODES IN GaAs GaAlAs SUPERLATTICES.pdf | 3 +++ ...3 Springer Handbook of Semiconductor Devices.pdf | 3 +++ ...C Identification of stacking sequence of 10H-SiC.pdf | 3 +++ ...型 2012 拉曼面扫描表征氮掺杂6H-SiC晶体多型分布.pdf | 3 +++ ...al Layers Grown on 4 off-Axis Si-face Substrates.pdf | 3 +++ 10 files changed, 41 insertions(+), 5 deletions(-) delete mode 100644 第二个论文/093506_1_online.pdf rename {拉曼 => 第二个论文}/2021-Chemical disorder of a-SiC layer induced in 6H-SiC by Cs and I ions co-implantation: Raman spectroscopy analysis.pdf (100%) rename {拉曼 => 第二个论文}/2021-Single-defect phonons imaged by electron microscopy.pdf (100%) create mode 100644 第二个论文/folded模式 1984 RAMAN SCATTERING STUDY OF ACOUSTICAL AND OPTICAL FOLDED MODES IN GaAs GaAlAs SUPERLATTICES.pdf create mode 100644 第二个论文/书 2023 Springer Handbook of Semiconductor Devices.pdf create mode 100644 第二个论文/拉曼定结构 2013 Raman intensity profiles of zone-folded modes in SiC Identification of stacking sequence of 10H-SiC.pdf create mode 100644 第二个论文/拉曼测多型 2012 拉曼面扫描表征氮掺杂6H-SiC晶体多型分布.pdf create mode 100644 第二个论文/拉曼测多型 2016 Study of Morphology Defects in 4H-SiC Thick Epitaxial Layers Grown on 4 off-Axis Si-face Substrates.pdf diff --git a/第二个论文/093506_1_online.pdf b/第二个论文/093506_1_online.pdf deleted file mode 100644 index c37f727..0000000 --- a/第二个论文/093506_1_online.pdf +++ /dev/null @@ -1,3 +0,0 @@ -version https://git-lfs.github.com/spec/v1 -oid sha256:525dede2571393387cdb1a78f21cfcfe88cbc5edef5ca587d1eea6bab61f72e6 -size 1333151 diff --git a/拉曼/2021-Chemical disorder of a-SiC layer induced in 6H-SiC by Cs and I ions co-implantation: Raman spectroscopy analysis.pdf b/第二个论文/2021-Chemical disorder of a-SiC layer induced in 6H-SiC by Cs and I ions co-implantation: Raman spectroscopy analysis.pdf similarity index 100% rename from 拉曼/2021-Chemical disorder of a-SiC layer induced in 6H-SiC by Cs and I ions co-implantation: Raman spectroscopy analysis.pdf rename to 第二个论文/2021-Chemical disorder of a-SiC layer induced in 6H-SiC by Cs and I ions co-implantation: Raman spectroscopy analysis.pdf diff --git a/拉曼/2021-Single-defect phonons imaged by electron microscopy.pdf b/第二个论文/2021-Single-defect phonons imaged by electron microscopy.pdf similarity index 100% rename from 拉曼/2021-Single-defect phonons imaged by electron microscopy.pdf rename to 第二个论文/2021-Single-defect phonons imaged by electron microscopy.pdf diff --git a/第二个论文/PhysRevB.6.2380.pdf b/第二个论文/PhysRevB.6.2380.pdf index 8bae4bd..cb8f629 100644 --- a/第二个论文/PhysRevB.6.2380.pdf +++ b/第二个论文/PhysRevB.6.2380.pdf @@ -1,3 +1,3 @@ version https://git-lfs.github.com/spec/v1 -oid sha256:90d0900838fc9fb79332530115817add93cd99799b2f9caac4b5f726aabae061 -size 729806 +oid sha256:e4bec7cb6bcd3ee9cd2643f2cdc1676e799b013ce5f26597f53b8669fb7dd21e +size 731365 diff --git a/第二个论文/README.md b/第二个论文/README.md index 1943b86..88d4213 100644 --- a/第二个论文/README.md +++ b/第二个论文/README.md @@ -60,3 +60,27 @@ 有一些结论我认为不对： * 他认为 LOPC 是有一个 A1、一个 E1，但我认为只有一个 A1。 * 他认为，最高峰右侧的小峰是 E1，但我认为可能是 A1（还需要计算来确认）。 + +# 拉曼面扫描表征氮掺杂 6H-SiC 晶体多型分布 + +拉曼测多型。 + +# Study of Morphology Defects in 4H-SiC Thick Epitaxial Layers Grown on 4 off-Axis Si-face Substrates + +拉曼测多型。 +里面有个图挺有创意。 + +# RAMAN SCATTERING STUDY OF ACOUSTICAL AND OPTICAL FOLDED MODES IN GaAs GaAlAs SUPERLATTICES + +里面给出了 folded 模式（FTA FTO 等）的定义，就是我理解的那样，这样一些论文中写的其实是错的。 + +# Raman intensity profiles of zone-folded modes in SiC: Identification of stacking sequence of 10H-SiC + +通过拉曼来测定 10H-SiC 的结构。 +具体来说，通过假定仅最近两层原子之间有相互作用，来计算理论的声子模式，并用已知结构的晶型来拟合，得到结果。 +然后计算各种可能的 10H 结构的声子模式，与实验结果比较。 + +提到了一些经验性的结论，包括： + +* 最强的 FTA 模式对应的约化（reduced）波矢 $q/q_\text{B}$ 等于六方率。 +* 在 a 面入射的前提下（注意这时的 TO 和 LO 对应模式与 c 面入射不同），TO（A1）与 TO（E）的频率差值与六方率成正比。 diff --git a/第二个论文/folded模式 1984 RAMAN SCATTERING STUDY OF ACOUSTICAL AND OPTICAL FOLDED MODES IN GaAs GaAlAs SUPERLATTICES.pdf b/第二个论文/folded模式 1984 RAMAN SCATTERING STUDY OF ACOUSTICAL AND OPTICAL FOLDED MODES IN GaAs GaAlAs SUPERLATTICES.pdf new file mode 100644 index 0000000..47e5dae --- /dev/null +++ b/第二个论文/folded模式 1984 RAMAN SCATTERING STUDY OF ACOUSTICAL AND OPTICAL FOLDED MODES IN GaAs GaAlAs SUPERLATTICES.pdf @@ -0,0 +1,3 @@ +version https://git-lfs.github.com/spec/v1 +oid sha256:0278ec08c892961d5b2384031a7582911516d82608fb152f1ca7b7b3b94fb480 +size 2317201 diff --git a/第二个论文/书 2023 Springer Handbook of Semiconductor Devices.pdf b/第二个论文/书 2023 Springer Handbook of Semiconductor Devices.pdf new file mode 100644 index 0000000..0ff48e7 --- /dev/null +++ b/第二个论文/书 2023 Springer Handbook of Semiconductor Devices.pdf @@ -0,0 +1,3 @@ +version https://git-lfs.github.com/spec/v1 +oid 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