From 51a4e39a6bf54f9545f0e54351177ad9bb70d700 Mon Sep 17 00:00:00 2001 From: chn Date: Wed, 6 Mar 2024 11:10:47 +0800 Subject: [PATCH] add note --- ...elaxation of Quartet Spin States in Silicon Carbide.md | 8 ++++++++ ...iC: Electronic structure and spin-photon interfaces.md | 2 ++ 2 files changed, 10 insertions(+) diff --git a/quantum information/Low-Field Microwave-Free Magnetometry Using the Dipolar Spin Relaxation of Quartet Spin States in Silicon Carbide.md b/quantum information/Low-Field Microwave-Free Magnetometry Using the Dipolar Spin Relaxation of Quartet Spin States in Silicon Carbide.md index e69de29..e36f814 100644 --- a/quantum information/Low-Field Microwave-Free Magnetometry Using the Dipolar Spin Relaxation of Quartet Spin States in Silicon Carbide.md +++ b/quantum information/Low-Field Microwave-Free Magnetometry Using the Dipolar Spin Relaxation of Quartet Spin States in Silicon Carbide.md @@ -0,0 +1,8 @@ +# abstract + +顺磁缺陷和核自旋是点缺陷量子比特磁场相关自旋弛豫的主要来源。 +相关光信号的探测已经导致了高空间分辨率的弛豫测量的发展。 +在这之中，SiC 的近简并四重基态的 Si 空位量子比特引起了特别的兴趣。 +因为它有在几乎零磁场下相当小的自旋弛豫速率，并且在生物组织的第一近红外窗口中发射。 +然而，这个弛豫的过程却还没有被完全探索。 +本文中，我们展现了 diff --git a/quantum information/Silicon vacancy center in 4H-SiC: Electronic structure and spin-photon interfaces.md b/quantum information/Silicon vacancy center in 4H-SiC: Electronic structure and spin-photon interfaces.md index 4b389f8..bf242eb 100644 --- a/quantum information/Silicon vacancy center in 4H-SiC: Electronic structure and spin-photon interfaces.md +++ b/quantum information/Silicon vacancy center in 4H-SiC: Electronic structure and spin-photon interfaces.md @@ -68,5 +68,7 @@ TODO: 为什么是这样一个算符？ 轨道和自旋角动量 transform as (E, A2) representation，所以自旋-轨道耦合的哈密顿量在 A1 表示中。 TODO: 为什么？ +TODO: 剩下的没看懂。 +