diff --git a/SiC/Analysis of surface diffusion of carbon- and nitrogen-containing molecules during homoepitaxial growth of 4H-SiC (0001) under silicon-rich conditions.pdf b/SiC/Analysis of surface diffusion of carbon- and nitrogen-containing molecules during homoepitaxial growth of 4H-SiC (0001) under silicon-rich conditions.pdf
new file mode 100644
index 0000000..3706760
--- /dev/null
+++ b/SiC/Analysis of surface diffusion of carbon- and nitrogen-containing molecules during homoepitaxial growth of 4H-SiC (0001) under silicon-rich conditions.pdf	
@@ -0,0 +1,3 @@
+version https://git-lfs.github.com/spec/v1
+oid sha256:bcc7e88d98b4db124364b4be43f15f8af05367bbc476f8bf391ca5fe8d428677
+size 575441
diff --git a/SiC/Dynamic behavior of clusters in the early stage of SiC (0001) epitaxial growth: A Kinetic Monte Carlo study.pdf b/SiC/Dynamic behavior of clusters in the early stage of SiC (0001) epitaxial growth: A Kinetic Monte Carlo study.pdf
new file mode 100644
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--- /dev/null
+++ b/SiC/Dynamic behavior of clusters in the early stage of SiC (0001) epitaxial growth: A Kinetic Monte Carlo study.pdf	
@@ -0,0 +1,3 @@
+version https://git-lfs.github.com/spec/v1
+oid sha256:99e659ae9108ca126fabf25e2db032744178918ea4f1b39b7a46c85107f1799e
+size 9660356
diff --git a/SiC/MD simulation study on defect evolution and doping efficiency of p-type doping of 3C-SiC by Al ion implantation with subsequent annealing.md b/SiC/MD simulation study on defect evolution and doping efficiency of p-type doping of 3C-SiC by Al ion implantation with subsequent annealing.md
new file mode 100644
index 0000000..3278d38
--- /dev/null
+++ b/SiC/MD simulation study on defect evolution and doping efficiency of p-type doping of 3C-SiC by Al ion implantation with subsequent annealing.md	
@@ -0,0 +1,10 @@
+# MD simulation study on defect evolution and doping efficiency of p-type doping of 3C-SiC by Al ion implantation with subsequent annealing
+
+## Abstract
+
+electronic stopping power 是什么？
+
+本研究展示了表面下方重结晶的过程，这个过程从非晶-晶态的界面到破坏的核心区域。
+重结晶的过程中，有明显的应力聚集，并在破坏较多和晶体的界面处有相转换和缺陷。
+另外，在掺杂较少的情况下，掺杂导致的缺陷更多。
+同时，高温退火也容易导致 C 空位。
diff --git a/SiC/Surface Science.md b/SiC/Surface Science.md
index 8535f23..327149c 100644
--- a/SiC/Surface Science.md	
+++ b/SiC/Surface Science.md	
@@ -7,3 +7,32 @@
 ### 2.2: How do Molecules Bond to Surfaces?
 
 ### 2.3: Kinetics of Adsorption
+
+现在只考虑吸附的过程，不考虑脱附的过程。
+
+可以认为，吸附的速率由分子流速率（单位面积上，每秒有多少个分子撞到表面上，$F$）和吸附的概率（撞到表面上的分子有多大概率被吸附上去，$S$）决定：
+
+$$
+R = SF \\
+F = \frac{P}{\sqrt{2\pi mkT}} \\
+S = f(\theta)\exp(-E/kT)
+$$
+
+$\theta$ 指表面覆盖率，即已经有多少比率的坑被占了。
+
+如果能量为每摩尔的吸附能而不是每单个分子或原子的吸附能，k 处应该换成 R。
+
+对于脱附的过程，脱附的速率为：
+
+$$
+R = \nu N \exp(-E/kT)
+$$
+
+其中 N 指吸附的原子或分子个数。将 N 取为 1 并积分，就得到了单个原子或分子经过一段时间后脱附的概率。
+
+如果要计算一个原子或者分子平均在表面上待的时间，可以计算得到：
+
+$$
+\frac{1}{\nu\exp(-E/kT)}
+$$
+
diff --git a/分子动力学/Interfacial potentials for Al SiC 111.md b/分子动力学/Interfacial potentials for Al SiC 111.md
new file mode 100644
index 0000000..32b5ea3
--- /dev/null
+++ b/分子动力学/Interfacial potentials for Al SiC 111.md	
@@ -0,0 +1 @@
+# Interfacial potentials for Al/SiC(111)
\ No newline at end of file
diff --git a/分子动力学/Interfacial potentials for Al SiC 111.pdf b/分子动力学/Interfacial potentials for Al SiC 111.pdf
new file mode 100644
index 0000000..194aac0
--- /dev/null
+++ b/分子动力学/Interfacial potentials for Al SiC 111.pdf	
@@ -0,0 +1,3 @@
+version https://git-lfs.github.com/spec/v1
+oid sha256:47582cec55c323b3ab8e740b71c35c3c4e4e1336a37aaa5316996b6d1157bc6c
+size 775017