10 lines
390 B
XML
10 lines
390 B
XML
= Results and Discussion
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Phonon modes in defect-free 4H-SiC were first analyzed,
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which account for the majority of the observed Raman signals.
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Subsequently, the effects of impurities and charge carriers were addressed,
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which manifested as additional minor peaks and modifications to the primary peaks in the Raman spectra.
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#include "perfect/default.typ"
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#include "defect/default.typ"
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