35 lines
2.3 KiB
XML
35 lines
2.3 KiB
XML
== Raman experiments setup
|
||
|
||
拉曼设备的型号。激光的波长,背散射。共焦针孔。
|
||
|
||
拉曼设备的型号是 LabRAM HR Evolution,使用背散射。
|
||
大部分实验中,我们使用 532 nm 的激光,少部分实验中使用 325 nm 的激光以观测紫外拉曼。
|
||
|
||
All Raman experiments were conducted using a LabRAM HR Evolution system in a back-scattering configuration,
|
||
where the scattered light was collected in the direction opposite to the incident laser.
|
||
A 532 nm laser was primarily used as the excitation source,
|
||
while a 325 nm laser was employed for only ultraviolet Raman measurements.
|
||
|
||
三个入射方向配置
|
||
|
||
有三个不同的入射配置,包括正入射、掠入射、边入射。
|
||
考虑到 4 度斜切和 4H-SiC 几乎各向同性的折射率(2.73) @shaffer_refractive_1971 ,掠入射的入射角大约为 25 度。
|
||
在正散射过程中,我们使用 100 微米的共焦针孔,以尽可能提高 z 方向的分辨率 @song_depth_2020;其它情况使用常用的 200 微米针孔以提高信噪比。
|
||
此外,在正入射和边入射时,拉曼散射信号较强,因此我们使用较短的积分时间(约 60 秒),
|
||
而在掠入射时,拉曼信号较弱,因此使用较长的积分时间(约 300 秒)。
|
||
|
||
Three distinct incidence configurations were utilized, as illustrated in @figure-incidence:
|
||
(i) normal incidence, where the laser incident perpendicularly to the epitaxial surface;
|
||
(ii) grazing incidence, where the laser incident nearly parallelly to the epitaxial surface;
|
||
and (iii) edge incidence, where the laser is incident at the wafer edge and perpendicularly to the edge surface.
|
||
Considering the 4° offcut angle and the nearly isotropic refractive index of 2.73 for 4H-SiC @shaffer_refractive_1971,
|
||
the refracted laser in grazing incidence forms an angle of approximately 25° with the c axis.
|
||
A 100 μm confocal pinhole was used for normal incidence to enhance axial (z-direction) resolution @song_depth_2020,
|
||
while a 200 μm pinhole was employed for the other configurations to improve the signal-to-noise ratio.
|
||
The integration time was set to 60 seconds for normal and edge incidence,
|
||
while it was extended to 300 seconds for grazing incidence due to the weaker Raman signal.
|
||
|
||
偏振的配置?
|
||
|
||
#include "figure-incidence.typ"
|