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SiC-2nd-paper/paper/method/experiment/default.typ
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== Raman experiments setup
拉曼设备的型号。激光的波长,背散射。共焦针孔。
拉曼设备的型号是 LabRAM HR Evolution使用背散射。
大部分实验中,我们使用 532 nm 的激光,少部分实验中使用 325 nm 的激光以观测紫外拉曼。
All Raman experiments were conducted using a LabRAM HR Evolution system in a back-scattering configuration,
where the scattered light was collected in the direction opposite to the incident laser.
A 532 nm laser was primarily used as the excitation source,
while a 325 nm laser was employed for only ultraviolet Raman measurements.
三个入射方向配置
有三个不同的入射配置,包括正入射、掠入射、边入射。
考虑到 4 度斜切和 4H-SiC 几乎各向同性的折射率2.73 @shaffer_refractive_1971 ,掠入射的入射角大约为 25 度。
在正散射过程中,我们使用 100 微米的共焦针孔,以尽可能提高 z 方向的分辨率 @song_depth_2020其它情况使用常用的 200 微米针孔以提高信噪比。
此外,在正入射和边入射时,拉曼散射信号较强,因此我们使用较短的积分时间(约 60 秒),
而在掠入射时,拉曼信号较弱,因此使用较长的积分时间(约 300 秒)。
Three distinct incidence configurations were utilized, as illustrated in @figure-incidence:
(i) normal incidence, where the laser incident perpendicularly to the epitaxial surface;
(ii) grazing incidence, where the laser incident nearly parallelly to the epitaxial surface;
and (iii) edge incidence, where the laser is incident at the wafer edge and perpendicularly to the edge surface.
Considering the 4° offcut angle and the nearly isotropic refractive index of 2.73 for 4H-SiC @shaffer_refractive_1971,
the refracted laser in grazing incidence forms an angle of approximately 25° with the c axis.
A 100 μm confocal pinhole was used for normal incidence to enhance axial (z-direction) resolution @song_depth_2020,
while a 200 μm pinhole was employed for the other configurations to improve the signal-to-noise ratio.
The integration time was set to 60 seconds for normal and edge incidence,
while it was extended to 300 seconds for grazing incidence due to the weaker Raman signal.
偏振的配置?
#include "figure-incidence.typ"