= Results and Discussion

Phonon modes in defect-free 4H-SiC were first analyzed,
  which account for the majority of the observed Raman signals.
Subsequently, the effects of impurities and charge carriers were addressed,
  which manifested as additional minor peaks and modifications to the primary peaks in the Raman spectra.

#include "perfect/default.typ"
#include "defect/default.typ"