test-typst/section/introduction.typ

@@ -8,16 +8,16 @@ The 4H-silicon carbide (SiC) has long attracted a lot of research
 It has been widely used in power electronic devices
   thanks to the development of epitaxy technology and the increasing application in the new energy industry
   @tsuchida_recent_2018 @harada_suppression_2022 @sun_selection_2022.
-However, the performance of 4H-SiC devices is still limited by the presence of defects,
+However, the performance of 4H-SiC devices remains constrained by the presence of defects,
-  which can be introduced during the growth process @nishio_triangular_2020 @demenet_tem_2005
+  which may be introduced during the growth process @nishio_triangular_2020 @demenet_tem_2005
-  and working conditions
+  or arise under device operating conditions
     @mahadik_ultraviolet_2012 @okada_dependences_2018 @iwahashi_extension_2017 @caldwell_driving_2010
     @miyanagi_annealing_2006 @iijima_correlation_2017.
-Moreover,
+Furthermore,
-  characterization of the doping properties of SiC is usually performed by secondary ion mass spectrometry (SIMS)
+  conventional methods for characterizing the doping properties of SiC
-  and Hall effect measurement,
+    （such as secondary ion mass spectrometry (SIMS) and Hall effect measurements),
-  which are destructive and time-consuming,
+  are destructive and time-consuming.
-  and non-destructive ad-hoc methods still need to be developed.
+Therefore, there is a pressing need to develop non-destructive and efficient characterization techniques.
 
 // 声子（量子化的原子振动）在理解晶体的原子结构以及热电性质方面起着重要作用。
 // 声子可以通过多种实验技术来探测，包括 EELS、IR 吸收谱等。