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@@ -3,14 +3,14 @@
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不同方向入射光的声子位置不同。
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声子的性质与它们在倒空间中的位置(即波矢)有关,而参与拉曼散射的声子波矢则由激光波长和拉曼入射配置(正入射、掠入射、边入射)决定。
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在我们的实验(绿光)中,参与拉曼散射的声子都位于 Gamma 点附近(距离仅 xxx 埃),而与 Gamma 点的相对方向则根据入射配置而定。
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在我们的实验(绿光)中,参与拉曼散射的声子都位于 Gamma 点附近(距离仅约 0.005 埃),而与 Gamma 点的相对方向则根据入射配置而定。
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对于正入射,声子大致位于 Gamma-A 线上;对于边入射,声子大致位于 Gamma-K 线上。对于掠入射,声子不位于任何高对称线上。
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The properties of phonons depend on their positions in reciprocal space (i.e., their wavevectors),
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and the wavevectors of phonons participating in a Raman scattering process
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are determined by the Raman experiment configuration.
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In our experiments (back-scattering with 532 nm laser light),
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the phonons involved are located very close to the #sym.Gamma point (approximately $5.13 times 10^(-3) angstrom$),
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the phonons involved are located very close to the #sym.Gamma point (approximately $5 times 10^(-3) angstrom$),
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and direction relative to the #sym.Gamma point is determined by the incidence configurations.
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For normal and edge incidence,
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the relevant phonons lie approximately along the #sym.Gamma–A and #sym.Gamma–K lines, respectively,
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@@ -2,6 +2,8 @@
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我们用 gamma 点的声子来近似弱极性的声子。
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Gamma 点的声子被用于
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// We investigate phonons at Gamma instead of the exact location near Gamma.
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Phonons at the #sym.Gamma point were used
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to approximate negligible-polar phonons that participating in Raman processes
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@@ -31,26 +31,19 @@
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- [ ] 英文
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- [ ] 填充数据和引用
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- [/] results
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- [/] 总述
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- [ ] 声子位置与实验对应
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- [x] 中文
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- [x] 英文
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- [x] 调整语言
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- [ ] 调整画图
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- [x] 每个位置有 21 个模式
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- [x] 中文
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- [x] 英文
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- [x] 调整语言
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- [x] 总述
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- [/] 无缺陷
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- [ ] 总述
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- [x] Gamma 附近有 21 个模式,我们将它们分为强极性和弱极性
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- [/] 总述
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- [/] 声子位置与实验对应
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- [x] 中文
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- [x] 英文
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- [x] 调整语言
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- [ ] 这样分类是有意义的
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- [ ] 中文
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- [ ] 英文
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- [ ] 调整语言
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- [ ] 调整画图
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- [x] 每个位置有 21 个模式
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- [x] 中文
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- [x] 英文
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- [x] 调整语言
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- [ ] 弱极性
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- [ ] 杂项
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- [ ] N#sub[C]C#sub[Si] 有什么好处?
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- [ ] 是否有其它需要研究的点缺陷?
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