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test-typst/ref.bib
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@article{demenet_tem_2005,
title = {{TEM} observations of the coexistence of perfect and dissociated dislocations in {SiC} under high stress},
volume = {2},
issn = {1610-1634},
url = {https://onlinelibrary.wiley.com/doi/10.1002/pssc.200460541},
doi = {10.1002/pssc.200460541},
language = {en},
number = {6},
urldate = {2022-07-04},
journal = {Physica Status Solidi C: Current Topics in Solid State Physics},
author = {Demenet, J. L. and Milhet, X. and Rabier, J.},
month = apr,
year = {2005},
pages = {1987--1991},
file = {Demenet 等。 - 2005 - TEM observations of the coexistence of perfect and.pdf:/home/chn/Zotero/storage/NHRXJKCK/Demenet 等。 - 2005 - TEM observations of the coexistence of perfect and.pdf:application/pdf},
}
@article{caldwell_driving_2010,
title = {On the driving force for recombination-induced stacking fault motion in {4H}-{SiC}},
volume = {108},
issn = {0021-8979, 1089-7550},
url = {http://aip.scitation.org/doi/10.1063/1.3467793},
doi = {10.1063/1.3467793},
language = {en},
number = {4},
urldate = {2022-09-20},
journal = {Journal of Applied Physics},
author = {Caldwell, Joshua D. and Stahlbush, Robert E. and Ancona, Mario G. and Glembocki, Orest J. and Hobart, Karl D.},
month = aug,
year = {2010},
pages = {044503},
file = {Caldwell 等。 - 2010 - On the driving force for recombination-induced sta.pdf:/home/chn/Zotero/storage/BRT4UJBM/Caldwell 等。 - 2010 - On the driving force for recombination-induced sta.pdf:application/pdf},
}
@article{iwahashi_extension_2017,
title = {Extension of {Stacking} {Faults} in {4H}-{SiC} pn {Diodes} under a {High} {Current} {Pulse} {Stress}},
volume = {897},
issn = {1662-9752},
url = {https://www.scientific.net/MSF.897.218},
doi = {10.4028/www.scientific.net/MSF.897.218},
abstract = {We investigated the expansion of stacking faults (SFs) under a high current pulse stress in detail. In situ observations showed bar-shaped SFs and two types of triangle SFs with different nucleation sites. The calculated partial dislocation velocity of the bar-shaped SFs was four times faster than that of the triangle SFs. The temperature dependence of the partial dislocation velocity was used to estimate activation energies of 0.23±0.02 eV for bar-shaped SFs and 0.27±0.05 eV for triangle SFs. We also compared the electrical characteristics before and after the stress. The forward voltage drop slightly increased by 0.05 V, and the leakage current did not increase.},
language = {en},
urldate = {2022-09-22},
journal = {Materials Science Forum},
author = {Iwahashi, Yohei and Miyazato, Masaki and Miyajima, Masaaki and Yonezawa, Yoshiyuki and Kato, Tomohisa and Fujiwara, Hirokazu and Hamada, Kimimori and Otsuki, Akihiro and Okumura, Hajime},
month = may,
year = {2017},
pages = {218--221},
file = {Iwahashi 等。 - 2017 - Extension of Stacking Faults in 4H-SiC pn Diodes u.pdf:/home/chn/Zotero/storage/8N5CPXAY/Iwahashi 等。 - 2017 - Extension of Stacking Faults in 4H-SiC pn Diodes u.pdf:application/pdf},
}
@article{okada_dependences_2018,
title = {Dependences of contraction/expansion of stacking faults on temperature and current density in {4H}-{SiC} p-i-n diodes},
volume = {57},
issn = {0021-4922, 1347-4065},
url = {https://iopscience.iop.org/article/10.7567/JJAP.57.061301},
doi = {10.7567/JJAP.57.061301},
language = {en},
number = {6},
urldate = {2022-09-22},
journal = {Japanese Journal of Applied Physics},
author = {Okada, Aoi and Nishio, Johji and Iijima, Ryosuke and Ota, Chiharu and Goryu, Akihiro and Miyazato, Masaki and Ryo, Mina and Shinohe, Takashi and Miyajima, Masaaki and Kato, Tomohisa and Yonezawa, Yoshiyuki and Okumura, Hajime},
month = jun,
year = {2018},
pages = {061301},
file = {Okada 等。 - 2018 - Dependences of contractionexpansion of stacking f.pdf:/home/chn/Zotero/storage/ZDPSUFFI/Okada 等。 - 2018 - Dependences of contractionexpansion of stacking f.pdf:application/pdf},
}
@article{iijima_correlation_2017,
title = {Correlation between shapes of {Shockley} stacking faults and structures of basal plane dislocations in {4H}-{SiC} epilayers},
volume = {97},
issn = {1478-6435, 1478-6443},
url = {https://www.tandfonline.com/doi/full/10.1080/14786435.2017.1350788},
doi = {10.1080/14786435.2017.1350788},
abstract = {Shockley-type stacking faults expanded in 4H–SiC epilayers induced by ultraviolet illumination were investigated using a photoluminescence imaging method, a photoluminescence mapping method and X-ray topography. After ultraviolet illumination, more than 30 patterns of Shockley-type stacking faults which expanded from perfect basal plane dislocations were observed by photoluminescence imaging. The initial basal plane dislocations were crystallographically classified, and individual shapes of expanded Shockley-type stacking faults were predicted. The correspondence between the predicted shapes and observed ones was discussed.},
language = {en},
number = {30},
urldate = {2022-09-24},
journal = {Philosophical Magazine},
author = {Iijima, Akifumi and Kamata, Isaho and Tsuchida, Hidekazu and Suda, Jun and Kimoto, Tsunenobu},
month = oct,
year = {2017},
pages = {2736--2752},
file = {Iijima 等。 - 2017 - Correlation between shapes of Shockley stacking fa.pdf:/home/chn/Zotero/storage/2G3ZSIAB/Iijima 等。 - 2017 - Correlation between shapes of Shockley stacking fa.pdf:application/pdf},
}
@article{mahadik_ultraviolet_2012,
title = {Ultraviolet {Photoluminescence} {Imaging} of {Stacking} {Fault} {Contraction} in {4H}-{SiC} {Epitaxial} {Layers}},
volume = {717-720},
issn = {1662-9752},
url = {https://www.scientific.net/MSF.717-720.391},
doi = {10.4028/www.scientific.net/MSF.717-720.391},
abstract = {Shockley stacking fault (SSF) contraction in 4H-SiC was investigated, in-situ, under varying temperature and ultraviolet (UV) intensity. Contraction of single SSFs at room temperature was observed for the first time under low power UV excitation of 0.04 W/cm2. At temperatures above 150 oC, complete SSF contraction occurred for UV power at 0.2 W/cm2. In contrast to expansion, SSF contraction occurred in discrete jumps between pinning sites along existing C-core partials. Luminescence from the pinning sites suggest they may be local concentrations of point defects. Additionally, a change in the line direction of the Si-core partials by {\textasciitilde}25o off the {\textless}112¯ 0{\textgreater} direction was observed.},
language = {en},
urldate = {2022-09-24},
journal = {Materials Science Forum},
author = {Mahadik, Nadeemullah A. and Stahlbush, Robert E. and Caldwell, Joshua D. and Hobart, Karl D.},
month = may,
year = {2012},
pages = {391--394},
file = {Mahadik 等。 - 2012 - Ultraviolet Photoluminescence Imaging of Stacking .pdf:/home/chn/Zotero/storage/MYMBL92A/Mahadik 等。 - 2012 - Ultraviolet Photoluminescence Imaging of Stacking .pdf:application/pdf},
}
@article{miyanagi_annealing_2006,
title = {Annealing effects on single {Shockley} faults in {4H}-{SiC}},
volume = {89},
issn = {0003-6951, 1077-3118},
url = {http://aip.scitation.org/doi/10.1063/1.2234740},
doi = {10.1063/1.2234740},
language = {en},
number = {6},
urldate = {2022-09-24},
journal = {Applied Physics Letters},
author = {Miyanagi, Toshiyuki and Tsuchida, Hidekazu and Kamata, Isaho and Nakamura, Tomonori and Nakayama, Koji and Ishii, Ryousuke and Sugawara, Yoshitaka},
month = aug,
year = {2006},
pages = {062104},
file = {Miyanagi 等。 - 2006 - Annealing effects on single Shockley faults in 4H-.pdf:/home/chn/Zotero/storage/33N8FRKW/Miyanagi 等。 - 2006 - Annealing effects on single Shockley faults in 4H-.pdf:application/pdf},
}
@article{nishio_triangular_2020,
title = {Triangular {Single} {Shockley} {Stacking} {Fault} {Analyses} on {4H}-{SiC} {PiN} {Diode} with {Forward} {Voltage} {Degradation}},
volume = {49},
issn = {0361-5235, 1543-186X},
url = {https://link.springer.com/10.1007/s11664-020-08133-7},
doi = {10.1007/s11664-020-08133-7},
language = {en},
number = {9},
urldate = {2022-09-24},
journal = {Journal of Electronic Materials},
author = {Nishio, Johji and Okada, Aoi and Ota, Chiharu and Kushibe, Mitsuhiro},
month = sep,
year = {2020},
pages = {5232--5239},
file = {Nishio 等。 - 2020 - Triangular Single Shockley Stacking Fault Analyses.pdf:/home/chn/Zotero/storage/SPG9HXBM/Nishio 等。 - 2020 - Triangular Single Shockley Stacking Fault Analyses.pdf:application/pdf},
}
@article{okumura_present_2006,
title = {Present {Status} and {Future} {Prospect} of {Widegap} {Semiconductor} {High}-{Power} {Devices}},
volume = {45},
@@ -68,13 +205,7 @@
volume = {12},
issn = {2045-2322},
doi = {10.1038/s41598-022-17060-y},
abstract = {Abstract
SiC bipolar degradation, which is caused by stacking fault expansion from basal plane dislocations in a SiC epitaxial layer or near the interface between the epitaxial layer and the substrate, is one of the critical problems inhibiting widespread usage of high-voltage SiC bipolar devices. In the present study, we investigated the stacking fault expansion behavior under UV illumination in a 4H-SiC epitaxial layer subjected to proton irradiation. X-ray topography observations revealed that proton irradiation suppressed stacking fault expansion. Excess carrier lifetime measurements showed that stacking fault expansion was suppressed in 4H-SiC epitaxial layers with proton irradiation at a fluence of 1 × 10
11
 cm
−2
without evident reduction of the excess carrier lifetime. Furthermore, stacking fault expansion was also suppressed even after high-temperature annealing to recover the excess carrier lifetime. These results implied that passivation of dislocation cores by protons hinders recombination-enhanced dislocation glide motion under UV illumination.},
abstract = {SiC bipolar degradation, which is caused by stacking fault expansion from basal plane dislocations in a SiC epitaxial layer or near the interface between the epitaxial layer and the substrate, is one of the critical problems inhibiting widespread usage of high-voltage SiC bipolar devices. In the present study, we investigated the stacking fault expansion behavior under UV illumination in a 4H-SiC epitaxial layer subjected to proton irradiation. X-ray topography observations revealed that proton irradiation suppressed stacking fault expansion. Excess carrier lifetime measurements showed that stacking fault expansion was suppressed in 4H-SiC epitaxial layers with proton irradiation at a fluence of 1 × 1011cm−2without evident reduction of the excess carrier lifetime. Furthermore, stacking fault expansion was also suppressed even after high-temperature annealing to recover the excess carrier lifetime. These results implied that passivation of dislocation cores by protons hinders recombination-enhanced dislocation glide motion under UV illumination.},
language = {en},
number = {1},
urldate = {2022-10-06},

23
test-typst/section/introduction.typ
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@@ -1,16 +1,23 @@
// SiC 是很好的材料。
// 其中，4H-SiC 是SiC的一种多型，它的性质更好，近年来随着外延工艺的成熟而获得了更多的关注。
SiC is a promising wide-bandgap semiconductor material
with high critical electric field strength and high thermal conductivity.
It has been widely used in power electronic devices and has long attracted a lot of research
The 4H-silicon carbide (SiC) has long attracted a lot of research
thanks to its wider bandgap, higher critical electric field strength,
higher thermal conductivity, and higher electron mobility along the c-axis
than silicon (Si) and gallium arsenide (GaAs) as well as other SiC polytypes
@casady_status_1996 @okumura_present_2006.
The 4H-SiC has a wider bandgap, higher critical electric field strength,
higher thermal conductivity, and higher electron mobility along the c-axis than other polytypes.
Currently, the 4H-SiC has gradually received more attention than other polytypes,
It has been widely used in power electronic devices
thanks to the development of epitaxy technology and the increasing application in the new energy industry
@tsuchida_recent_2018 @harada_suppression_2022 @sun_selection_2022.
// TODO: 多引用一些近年来的文献，有很多
// TODO: 这段是直接从上一篇论文中节选的，需要修改一下以避免重复。
However, the performance of 4H-SiC devices is still limited by the presence of defects,
which can be introduced during the growth process @nishio_triangular_2020 @demenet_tem_2005
and working conditions
@mahadik_ultraviolet_2012 @okada_dependences_2018 @iwahashi_extension_2017 @caldwell_driving_2010
@miyanagi_annealing_2006 @iijima_correlation_2017.
Moreover,
characterization of the doping properties of SiC is usually performed by secondary ion mass spectrometry (SIMS)
and Hall effect measurement,
which are destructive and time-consuming,
and non-destructive ad-hoc methods still need to be developed.
// 声子（量子化的原子振动）在理解晶体的原子结构以及热电性质方面起着重要作用。
// 声子可以通过多种实验技术来探测，包括 EELS、IR 吸收谱等。