This commit is contained in:
@@ -1,4 +1,141 @@
|
||||
|
||||
@article{demenet_tem_2005,
|
||||
title = {{TEM} observations of the coexistence of perfect and dissociated dislocations in {SiC} under high stress},
|
||||
volume = {2},
|
||||
issn = {1610-1634},
|
||||
url = {https://onlinelibrary.wiley.com/doi/10.1002/pssc.200460541},
|
||||
doi = {10.1002/pssc.200460541},
|
||||
language = {en},
|
||||
number = {6},
|
||||
urldate = {2022-07-04},
|
||||
journal = {Physica Status Solidi C: Current Topics in Solid State Physics},
|
||||
author = {Demenet, J. L. and Milhet, X. and Rabier, J.},
|
||||
month = apr,
|
||||
year = {2005},
|
||||
pages = {1987--1991},
|
||||
file = {Demenet 等。 - 2005 - TEM observations of the coexistence of perfect and.pdf:/home/chn/Zotero/storage/NHRXJKCK/Demenet 等。 - 2005 - TEM observations of the coexistence of perfect and.pdf:application/pdf},
|
||||
}
|
||||
|
||||
@article{caldwell_driving_2010,
|
||||
title = {On the driving force for recombination-induced stacking fault motion in {4H}-{SiC}},
|
||||
volume = {108},
|
||||
issn = {0021-8979, 1089-7550},
|
||||
url = {http://aip.scitation.org/doi/10.1063/1.3467793},
|
||||
doi = {10.1063/1.3467793},
|
||||
language = {en},
|
||||
number = {4},
|
||||
urldate = {2022-09-20},
|
||||
journal = {Journal of Applied Physics},
|
||||
author = {Caldwell, Joshua D. and Stahlbush, Robert E. and Ancona, Mario G. and Glembocki, Orest J. and Hobart, Karl D.},
|
||||
month = aug,
|
||||
year = {2010},
|
||||
pages = {044503},
|
||||
file = {Caldwell 等。 - 2010 - On the driving force for recombination-induced sta.pdf:/home/chn/Zotero/storage/BRT4UJBM/Caldwell 等。 - 2010 - On the driving force for recombination-induced sta.pdf:application/pdf},
|
||||
}
|
||||
|
||||
@article{iwahashi_extension_2017,
|
||||
title = {Extension of {Stacking} {Faults} in {4H}-{SiC} pn {Diodes} under a {High} {Current} {Pulse} {Stress}},
|
||||
volume = {897},
|
||||
issn = {1662-9752},
|
||||
url = {https://www.scientific.net/MSF.897.218},
|
||||
doi = {10.4028/www.scientific.net/MSF.897.218},
|
||||
abstract = {We investigated the expansion of stacking faults (SFs) under a high current pulse stress in detail. In situ observations showed bar-shaped SFs and two types of triangle SFs with different nucleation sites. The calculated partial dislocation velocity of the bar-shaped SFs was four times faster than that of the triangle SFs. The temperature dependence of the partial dislocation velocity was used to estimate activation energies of 0.23±0.02 eV for bar-shaped SFs and 0.27±0.05 eV for triangle SFs. We also compared the electrical characteristics before and after the stress. The forward voltage drop slightly increased by 0.05 V, and the leakage current did not increase.},
|
||||
language = {en},
|
||||
urldate = {2022-09-22},
|
||||
journal = {Materials Science Forum},
|
||||
author = {Iwahashi, Yohei and Miyazato, Masaki and Miyajima, Masaaki and Yonezawa, Yoshiyuki and Kato, Tomohisa and Fujiwara, Hirokazu and Hamada, Kimimori and Otsuki, Akihiro and Okumura, Hajime},
|
||||
month = may,
|
||||
year = {2017},
|
||||
pages = {218--221},
|
||||
file = {Iwahashi 等。 - 2017 - Extension of Stacking Faults in 4H-SiC pn Diodes u.pdf:/home/chn/Zotero/storage/8N5CPXAY/Iwahashi 等。 - 2017 - Extension of Stacking Faults in 4H-SiC pn Diodes u.pdf:application/pdf},
|
||||
}
|
||||
|
||||
@article{okada_dependences_2018,
|
||||
title = {Dependences of contraction/expansion of stacking faults on temperature and current density in {4H}-{SiC} p-i-n diodes},
|
||||
volume = {57},
|
||||
issn = {0021-4922, 1347-4065},
|
||||
url = {https://iopscience.iop.org/article/10.7567/JJAP.57.061301},
|
||||
doi = {10.7567/JJAP.57.061301},
|
||||
language = {en},
|
||||
number = {6},
|
||||
urldate = {2022-09-22},
|
||||
journal = {Japanese Journal of Applied Physics},
|
||||
author = {Okada, Aoi and Nishio, Johji and Iijima, Ryosuke and Ota, Chiharu and Goryu, Akihiro and Miyazato, Masaki and Ryo, Mina and Shinohe, Takashi and Miyajima, Masaaki and Kato, Tomohisa and Yonezawa, Yoshiyuki and Okumura, Hajime},
|
||||
month = jun,
|
||||
year = {2018},
|
||||
pages = {061301},
|
||||
file = {Okada 等。 - 2018 - Dependences of contractionexpansion of stacking f.pdf:/home/chn/Zotero/storage/ZDPSUFFI/Okada 等。 - 2018 - Dependences of contractionexpansion of stacking f.pdf:application/pdf},
|
||||
}
|
||||
|
||||
@article{iijima_correlation_2017,
|
||||
title = {Correlation between shapes of {Shockley} stacking faults and structures of basal plane dislocations in {4H}-{SiC} epilayers},
|
||||
volume = {97},
|
||||
issn = {1478-6435, 1478-6443},
|
||||
url = {https://www.tandfonline.com/doi/full/10.1080/14786435.2017.1350788},
|
||||
doi = {10.1080/14786435.2017.1350788},
|
||||
abstract = {Shockley-type stacking faults expanded in 4H–SiC epilayers induced by ultraviolet illumination were investigated using a photoluminescence imaging method, a photoluminescence mapping method and X-ray topography. After ultraviolet illumination, more than 30 patterns of Shockley-type stacking faults which expanded from perfect basal plane dislocations were observed by photoluminescence imaging. The initial basal plane dislocations were crystallographically classified, and individual shapes of expanded Shockley-type stacking faults were predicted. The correspondence between the predicted shapes and observed ones was discussed.},
|
||||
language = {en},
|
||||
number = {30},
|
||||
urldate = {2022-09-24},
|
||||
journal = {Philosophical Magazine},
|
||||
author = {Iijima, Akifumi and Kamata, Isaho and Tsuchida, Hidekazu and Suda, Jun and Kimoto, Tsunenobu},
|
||||
month = oct,
|
||||
year = {2017},
|
||||
pages = {2736--2752},
|
||||
file = {Iijima 等。 - 2017 - Correlation between shapes of Shockley stacking fa.pdf:/home/chn/Zotero/storage/2G3ZSIAB/Iijima 等。 - 2017 - Correlation between shapes of Shockley stacking fa.pdf:application/pdf},
|
||||
}
|
||||
|
||||
@article{mahadik_ultraviolet_2012,
|
||||
title = {Ultraviolet {Photoluminescence} {Imaging} of {Stacking} {Fault} {Contraction} in {4H}-{SiC} {Epitaxial} {Layers}},
|
||||
volume = {717-720},
|
||||
issn = {1662-9752},
|
||||
url = {https://www.scientific.net/MSF.717-720.391},
|
||||
doi = {10.4028/www.scientific.net/MSF.717-720.391},
|
||||
abstract = {Shockley stacking fault (SSF) contraction in 4H-SiC was investigated, in-situ, under varying temperature and ultraviolet (UV) intensity. Contraction of single SSFs at room temperature was observed for the first time under low power UV excitation of 0.04 W/cm2. At temperatures above 150 oC, complete SSF contraction occurred for UV power at 0.2 W/cm2. In contrast to expansion, SSF contraction occurred in discrete jumps between pinning sites along existing C-core partials. Luminescence from the pinning sites suggest they may be local concentrations of point defects. Additionally, a change in the line direction of the Si-core partials by {\textasciitilde}25o off the {\textless}112¯ 0{\textgreater} direction was observed.},
|
||||
language = {en},
|
||||
urldate = {2022-09-24},
|
||||
journal = {Materials Science Forum},
|
||||
author = {Mahadik, Nadeemullah A. and Stahlbush, Robert E. and Caldwell, Joshua D. and Hobart, Karl D.},
|
||||
month = may,
|
||||
year = {2012},
|
||||
pages = {391--394},
|
||||
file = {Mahadik 等。 - 2012 - Ultraviolet Photoluminescence Imaging of Stacking .pdf:/home/chn/Zotero/storage/MYMBL92A/Mahadik 等。 - 2012 - Ultraviolet Photoluminescence Imaging of Stacking .pdf:application/pdf},
|
||||
}
|
||||
|
||||
@article{miyanagi_annealing_2006,
|
||||
title = {Annealing effects on single {Shockley} faults in {4H}-{SiC}},
|
||||
volume = {89},
|
||||
issn = {0003-6951, 1077-3118},
|
||||
url = {http://aip.scitation.org/doi/10.1063/1.2234740},
|
||||
doi = {10.1063/1.2234740},
|
||||
language = {en},
|
||||
number = {6},
|
||||
urldate = {2022-09-24},
|
||||
journal = {Applied Physics Letters},
|
||||
author = {Miyanagi, Toshiyuki and Tsuchida, Hidekazu and Kamata, Isaho and Nakamura, Tomonori and Nakayama, Koji and Ishii, Ryousuke and Sugawara, Yoshitaka},
|
||||
month = aug,
|
||||
year = {2006},
|
||||
pages = {062104},
|
||||
file = {Miyanagi 等。 - 2006 - Annealing effects on single Shockley faults in 4H-.pdf:/home/chn/Zotero/storage/33N8FRKW/Miyanagi 等。 - 2006 - Annealing effects on single Shockley faults in 4H-.pdf:application/pdf},
|
||||
}
|
||||
|
||||
@article{nishio_triangular_2020,
|
||||
title = {Triangular {Single} {Shockley} {Stacking} {Fault} {Analyses} on {4H}-{SiC} {PiN} {Diode} with {Forward} {Voltage} {Degradation}},
|
||||
volume = {49},
|
||||
issn = {0361-5235, 1543-186X},
|
||||
url = {https://link.springer.com/10.1007/s11664-020-08133-7},
|
||||
doi = {10.1007/s11664-020-08133-7},
|
||||
language = {en},
|
||||
number = {9},
|
||||
urldate = {2022-09-24},
|
||||
journal = {Journal of Electronic Materials},
|
||||
author = {Nishio, Johji and Okada, Aoi and Ota, Chiharu and Kushibe, Mitsuhiro},
|
||||
month = sep,
|
||||
year = {2020},
|
||||
pages = {5232--5239},
|
||||
file = {Nishio 等。 - 2020 - Triangular Single Shockley Stacking Fault Analyses.pdf:/home/chn/Zotero/storage/SPG9HXBM/Nishio 等。 - 2020 - Triangular Single Shockley Stacking Fault Analyses.pdf:application/pdf},
|
||||
}
|
||||
|
||||
@article{okumura_present_2006,
|
||||
title = {Present {Status} and {Future} {Prospect} of {Widegap} {Semiconductor} {High}-{Power} {Devices}},
|
||||
volume = {45},
|
||||
@@ -68,13 +205,7 @@
|
||||
volume = {12},
|
||||
issn = {2045-2322},
|
||||
doi = {10.1038/s41598-022-17060-y},
|
||||
abstract = {Abstract
|
||||
|
||||
SiC bipolar degradation, which is caused by stacking fault expansion from basal plane dislocations in a SiC epitaxial layer or near the interface between the epitaxial layer and the substrate, is one of the critical problems inhibiting widespread usage of high-voltage SiC bipolar devices. In the present study, we investigated the stacking fault expansion behavior under UV illumination in a 4H-SiC epitaxial layer subjected to proton irradiation. X-ray topography observations revealed that proton irradiation suppressed stacking fault expansion. Excess carrier lifetime measurements showed that stacking fault expansion was suppressed in 4H-SiC epitaxial layers with proton irradiation at a fluence of 1 × 10
|
||||
11
|
||||
cm
|
||||
−2
|
||||
without evident reduction of the excess carrier lifetime. Furthermore, stacking fault expansion was also suppressed even after high-temperature annealing to recover the excess carrier lifetime. These results implied that passivation of dislocation cores by protons hinders recombination-enhanced dislocation glide motion under UV illumination.},
|
||||
abstract = {SiC bipolar degradation, which is caused by stacking fault expansion from basal plane dislocations in a SiC epitaxial layer or near the interface between the epitaxial layer and the substrate, is one of the critical problems inhibiting widespread usage of high-voltage SiC bipolar devices. In the present study, we investigated the stacking fault expansion behavior under UV illumination in a 4H-SiC epitaxial layer subjected to proton irradiation. X-ray topography observations revealed that proton irradiation suppressed stacking fault expansion. Excess carrier lifetime measurements showed that stacking fault expansion was suppressed in 4H-SiC epitaxial layers with proton irradiation at a fluence of 1 × 1011cm−2without evident reduction of the excess carrier lifetime. Furthermore, stacking fault expansion was also suppressed even after high-temperature annealing to recover the excess carrier lifetime. These results implied that passivation of dislocation cores by protons hinders recombination-enhanced dislocation glide motion under UV illumination.},
|
||||
language = {en},
|
||||
number = {1},
|
||||
urldate = {2022-10-06},
|
||||
|
||||
Reference in New Issue
Block a user