尝试加入参考文献

paper/.gitignore

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 /*.xdv
 /*.bbl
 /*.blg
-/*.bib

paper/main.tex

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-\documentclass[preprintnumbers]{revtex4-2}
+\documentclass[preprintnumbers,aps,prl,nofootinbib]{revtex4-2}
 % \linespread{1.5}
 
 \usepackage{graphicx}
 \usepackage{dcolumn}
 \usepackage{bm}
 \usepackage[mathlines]{lineno}
-\usepackage[slantfont, boldfont]{xeCJK}
-\setCJKmainfont{Microsoft YaHei}
-\setCJKmonofont{Source Code Pro}
-\setCJKsansfont{YouYuan}
+% \usepackage[slantfont, boldfont]{xeCJK}
+% \setCJKmainfont{Microsoft YaHei}
+% \setCJKmonofont{Source Code Pro}
+% \setCJKsansfont{YouYuan}
 \linenumbers
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@@ -16,6 +16,17 @@
 \usepackage{rotating}
 \usepackage{amsmath}
 \usepackage{tabularray}
+\usepackage{siunitx}
+\DeclareSIUnit\angstrom{\textup{\AA}}
+\DeclareSIUnit\elementarycharge{\textup{e}}
+\sisetup{range-units=single,range-phrase=-}
+\usepackage{soul}
+\usepackage[svgnames]{xcolor}
+% \newcommand{\del}[1]{\textcolor{red}{\st{#1}}}
+% \DeclareRobustCommand{\add}[1]{{\sethlcolor{LightGreen}\hl{#1}}}
+% \usepackage[colorlinks]{hyperref}
+% \usepackage[style=cms]{citation-style-language}
+% \addbibresource{ref.bib}
 
 \begin{document}
 
@@ -23,7 +34,7 @@
 
 \title{Title Title Title}
 
-\author{Ann Author}\altaffiliation[Also at ]{Physics Department, XYZ University.}
+\author{Haonan Chen}\altaffiliation{Physics Department, XYZ University.}
 
 \begin{abstract}
 An article usually includes an abstract, a concise summary of the work
@@ -34,6 +45,50 @@ covered at length in the main body of the article.
 
 \section{Introduction}\label{sec_introduction}
 
+% SiC 是很好的材料。
+% 其中，4H-SiC 是SiC的一种多型，它的性质更好，近年来随着外延工艺的成熟而获得了更多的关注。
+% SiC 中的声子与材料的性质密切相关。通常来说，通过拉曼来区分多型。我们相信可以通过声子来挖掘更多的信息。
+
+SiC is a promising wide-bandgap semiconductor material
+  with high critical electric field strength and high thermal conductivity.
+  It has been widely used in power electronic devices and has long attracted a lot of research
+  \cite{casady_status_1996, okumura_present_2006}.
+% The 4H-SiC has a wider bandgap, higher critical electric field strength,
+%   higher thermal conductivity, and higher electron mobility along the c-axis than other polytypes.
+% Currently, the 4H-SiC has gradually received more attention than other polytypes,
+%   thanks to the development of epitaxy technology and the increasing application in the new energy industry
+%   \cite{tsuchida_recent_2018, harada_suppression_2022, sun_selection_2022}.% TODO: 多引用一些近年来的文献，有很多
+% 
+% Currently, the 4H-SiC has gradually received more attention than other polytypes,
+%   thanks to the development of epitaxy technology and the increasing application in the new energy industry
+%   \cite{tsuchida_recent_2018, harada_suppression_2022, sun_selection_2022}. 
+
+
+% 某某人做了什么
+
+
+
+% 4H-SiC is a promising wide-bandgap semiconductor material
+%    with high critical electric field strength and high thermal conductivity.
+%    It has been widely used in power electronic devices and has long attracted a lot of research
+%    \cite{casady_status_1996, okumura_present_2006}.
+%  SiC has more than 250 polytypes \cite{cheung_silicon_2006}, the 3C-SiC has been widely studied in the past decades
+% 139       \cite{dompoint_kinetics_2011, izhevskyi_review_2000, kimoto_bulk_2016, tang_atomic_2007, blumenau_effect_2005,
+% 140         bernardini_interaction_2005, rodney_ab_2017, blumenau_straight_2002, blumenau_structure_2003,
+% 141         vashishta_interaction_2007}.
+% 
+% 147     It shows an exclusive application in power electronic devices,
+% 148       such as the Schottky barrier diodes and the power metal-oxide-semiconductor field-effect transistors
+% 149       \cite{bhatnagar_comparison_1993, kimoto_material_2015}.
+% 150     However, these applications are negatively affected by Shockley stacking faults (SSFs),
+% 151       which are a class of common defects in 4H-SiC.
+% 152
+% 153     The structure of SiC could be considered as a stack of Si and C atomic layers,
+% 154       and only the stacking sequence of exactly repeating A-B-C-B leads to the formation of 4H-SiC without defects.
+% 155     The differences in formation energies between different stacking positions are only about
+% 156         \qty{1}{\meV/atom} \cite{kimoto_bulk_2016},
+
+
 SiC has many excellent properties and wide applications.
 
 Phonons in SiC are important. They can influence the properties of SiC and can be used to characterize the materials.
@@ -356,4 +411,6 @@ Thus, we divide the phonons of defect-free 4H-SiC into three categories:
   \label{tab:phonon}
 \end{sidewaystable}
 
+\bibliography{ref}
+
 \end{document}

paper/ref.bib

@@ -0,0 +1,82 @@
+
+@article{okumura_present_2006,
+	title = {Present {Status} and {Future} {Prospect} of {Widegap} {Semiconductor} {High}-{Power} {Devices}},
+	volume = {45},
+	issn = {0021-4922, 1347-4065},
+	doi = {10.1143/JJAP.45.7565},
+	language = {en},
+	number = {10A},
+	urldate = {2022-09-27},
+	journal = {Japanese Journal of Applied Physics},
+	author = {Okumura, Hajime},
+	month = oct,
+	year = {2006},
+	pages = {7565--7586},
+	file = {Okumura - 2006 - Present Status and Future Prospect of Widegap Semi.pdf:/home/chn/Zotero/storage/T26XT9I6/Okumura - 2006 - Present Status and Future Prospect of Widegap Semi.pdf:application/pdf},
+}
+
+@article{casady_status_1996,
+	title = {Status of {Silicon} {Carbide} ({SiC}) as a {Wide}-bandgap {Emiconductor} for {High}-temperature {Applications}: a {Review}},
+	volume = {39},
+	doi = {10.1016/0038-1101(96)00045-7},
+	language = {en},
+	number = {10},
+	journal = {Solid-State Electronics},
+	author = {Casady, J B and Johnson, R W},
+	month = feb,
+	year = {1996},
+	pages = {1409--1422},
+	file = {Casady 和 Johnson - STATUS OF SILICON CARBIDE (SIC) AS A WlDE-BANDGAP .pdf:/home/chn/Zotero/storage/9UE6AB28/Casady 和 Johnson - STATUS OF SILICON CARBIDE (SIC) AS A WlDE-BANDGAP .pdf:application/pdf},
+}
+
+@article{tsuchida_recent_2018,
+	title = {Recent advances in {4H}-{SiC} epitaxy for high-voltage power devices},
+	volume = {78},
+	issn = {13698001},
+	doi = {10.1016/j.mssp.2017.11.003},
+	abstract = {This paper reports recent advances in high-quality 4H-SiC epitaxial growth. The modern 4H-SiC epitaxial reactors, techniques to improve growth rates and large-diameter uniformity and reduce defect densities are discussed. A single-wafer vertical-type epitaxial reactor is newly developed and employed to grow 150 mm-diameter 4H-SiC epilayers. Using the reactor, high-speed wafer rotation is confirmed effective, both for enhancing growth rates and improving thickness and doping uniformities. Current levels of reducing particle-induced defects, in-grown stacking faults and basal plane dislocations and controlling carrier lifetimes are also reviewed.},
+	language = {en},
+	urldate = {2022-10-06},
+	journal = {Materials Science in Semiconductor Processing},
+	author = {Tsuchida, Hidekazu and Kamata, Isaho and Miyazawa, Tetsuya and Ito, Masahiko and Zhang, Xuan and Nagano, Masahiro},
+	month = may,
+	year = {2018},
+	pages = {2--12},
+	file = {Tsuchida 等。 - 2018 - Recent advances in 4H-SiC epitaxy for high-voltage.pdf:/home/chn/Zotero/storage/S596D8SX/Tsuchida 等。 - 2018 - Recent advances in 4H-SiC epitaxy for high-voltage.pdf:application/pdf},
+}
+
+@article{sun_selection_2022,
+	title = {Selection of growth monomers on the {4H}-{SiC} (0001) atomic step surfaces: from the first-principles calculations to homo-epitaxy verification},
+	volume = {606},
+	issn = {01694332},
+	shorttitle = {Selection of growth monomers on the {4H}-{SiC} (0001) atomic step surfaces},
+	url = {https://linkinghub.elsevier.com/retrieve/pii/S0169433222024771},
+	doi = {10.1016/j.apsusc.2022.154949},
+	abstract = {Silicon carbide (SiC) has gained increased interest due to industry demand, especially for the 4H-SiC. Never­ theless, the ‘structural mutation’ in the 4H-SiC epitaxy is in urgent need of investigation and proper solution as the epitaxial thickness/wafer size increases. In this study, growth monomers in the step-flow mode were firstly investigated by the first-principles calculations for their dynamic and kinetic behaviours from an atomic level. The stability (by the comprehensive analyses of total energies, chemical potentials, and formation enthalpies) and the location of adsorptions were studied to reveal the dynamics. Meanwhile, the potential barrier of Si-Si interaction and phonon spectra were determined to understand the kinetics. We found monomers could be selected by controlling chemical potentials to make ordering growth. Secondly, two methods were thus inferred to select monomers to adsorb on atomic step surfaces in an orderly fashion and were verified in a six-inch epitaxy. Thirdly, a protocol was designed to restrict the extension of basal plane dislocation (BPD) from sub­ strates, a reduction greater than five orders of magnitude was gained but without time compromise in the thickfilm epitaxy. This study provided new insights into growth on the 4H-SiC (0001) atomic step surfaces and a new way of 4H-SiC homo-epitaxy.},
+	language = {en},
+	urldate = {2022-10-06},
+	journal = {Applied Surface Science},
+	author = {Sun, Yongqiang and Kang, Wenyu and Chen, Haonan and Chen, Xinlu and Dong, Yue and Lin, Wei and Kang, Junyong},
+	month = dec,
+	year = {2022},
+	pages = {154949},
+	file = {Sun et al. - 2022 - Selection of growth monomers on the 4H-SiC (0001) .pdf:/home/chn/Zotero/storage/VTGL4G53/Sun et al. - 2022 - Selection of growth monomers on the 4H-SiC (0001) .pdf:application/pdf},
+}
+
+@article{harada_observation_2022,
+	title = {Observation of in-plane shear stress fields in off-axis {SiC} wafers by birefringence imaging},
+	volume = {55},
+	issn = {1600-5767},
+	url = {https://scripts.iucr.org/cgi-bin/paper?S1600576722006483},
+	doi = {10.1107/S1600576722006483},
+	abstract = {For the nondestructive characterization of SiC wafers for power device application, birefringence imaging is one of the promising methods. In the present study, it is demonstrated that birefringence image contrast variation in off-axis SiC wafers corresponds to the in-plane shear stress under conditions slightly deviating from crossed Nicols according to both theoretical consideration and experimental observation. The current results indicate that the characterization of defects in SiC wafers is possible to achieve by birefringence imaging.},
+	language = {en},
+	number = {4},
+	urldate = {2023-06-14},
+	journal = {Journal of Applied Crystallography},
+	author = {Harada, Shunta and Murayama, Kenta},
+	month = aug,
+	year = {2022},
+	pages = {1029--1032},
+	file = {Harada and Murayama - 2022 - Observation of in-plane shear stress fields in off.pdf:/home/chn/Zotero/storage/X6LVEJRU/Harada and Murayama - 2022 - Observation of in-plane shear stress fields in off.pdf:application/pdf},
+}

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