diff --git a/paper/method/default.typ b/paper/method/default.typ
index 7d38d22..af48208 100644
--- a/paper/method/default.typ
+++ b/paper/method/default.typ
@@ -23,21 +23,24 @@ The Si/C ratios during growth were 0.7, 1.2, 1.6, 2.4, and 2.0 for the five wafe
 大部分实验中，我们使用 532 nm 的激光，少部分实验中使用 325 nm 的激光以观测紫外拉曼。
 有三个不同的入射配置，包括正入射、掠入射、边入射。
 考虑到 4 度斜切和 4H-SiC 几乎各向同性的折射率（2.73） @shaffer_refractive_1971 ，掠入射的入射角大约为 25 度。
-在正散射过程中，我们使用 100 微米的共焦针孔，以尽可能提高 z 方向的分辨率 @song_depth_2020。
+在正散射过程中，我们使用 100 微米的共焦针孔，以尽可能提高 z 方向的分辨率 @song_depth_2020；其它情况使用常用的 200 微米针孔以提高信噪比。
+此外，在正入射和边入射时，拉曼散射信号较强，因此我们使用较短的积分时间（约 60 秒），
+  而在掠入射时，拉曼信号较弱，因此使用较长的积分时间（约 300 秒）。
 
-All our Raman experiments were performed using a LabRAM HR Evolution system with back-scattering configuration,
-  where collected scattered light has a reversed wavevector direction compared to the incident light.
-A 532 nm laser was used in most experiments,
-  while a 325 nm laser was used to observe Raman signals under ultraviolet excitation.
-Three different incidece configurations were used, as shown in @figure-incidence,
-  including normal incidence, where the laser beam is perpendicular to the epitaxial surface;
-  grazing incidence, where the laser beam is nearly parallel to the epitaxial surface;
-  and edge incidence, where the laser beam is incident at the edge of the wafer, instead of the epitaxial surface.
-Taking the 4° offcut angle
-    and the nearly isotropic refractive index 2.73 of 4H-SiC @shaffer_refractive_1971 into account,
-  the wavevector in 4H-SiC during grazing incidence is about 25° to the c axis.
-During normal incidence, a 100 μm confocal pinhole was used to improve the z-direction resolution @song_depth_2020;
-  while during other configurations, 200 μm confocal pinhole was used to improve the signal-to-noise ratio.
+All Raman experiments were conducted using a LabRAM HR Evolution system in a back-scattering configuration,
+  where the collected scattered light propagates in the opposite direction to the incident laser.
+A 532 nm laser served as the primary excitation source,
+  while a 325 nm laser was employed for only ultraviolet Raman measurements.
+Three distinct incidence configurations were utilized, as illustrated in @figure-incidence:
+  (i) normal incidence, where the laser incident perpendicularly to the epitaxial surface;
+  (ii) grazing incidence, where the laser incident nearly parallelly to the epitaxial surface;
+  and (iii) edge incidence, where the laser is incident at the wafer edge and perpendicularly to the edge surface.
+Considering the 4° offcut angle and the nearly isotropic refractive index of 2.73 for 4H-SiC @shaffer_refractive_1971,
+  the refracted laser in 4H-SiC during grazing incidence forms an angle of approximately 25° with the c axis.
+A 100 μm confocal pinhole was used for normal incidence to enhance axial (z-direction) resolution @song_depth_2020,
+  while a 200 μm pinhole was employed for the other configurations to improve the signal-to-noise ratio.
+Besides, the integration time was set to 60 seconds for normal and edge incidence,
+  while it was extended to 300 seconds for grazing incidence due to the weaker Raman signal.
 
 #include "figure-incidence.typ"