From 912d1573a8874bd71a1a7342fa9b11eb2f06210b Mon Sep 17 00:00:00 2001 From: chn Date: Sat, 19 Apr 2025 21:10:48 +0800 Subject: [PATCH] --- paper/main.tex | 13 +++++++++++++ 1 file changed, 13 insertions(+) diff --git a/paper/main.tex b/paper/main.tex index 11c9ce9..1baebf3 100644 --- a/paper/main.tex +++ b/paper/main.tex @@ -62,6 +62,19 @@ In this paper, we do some things. We do something for the first time. \subsection{Phonons in Perfect 4H-SiC} +% 拉曼活性的声子模式对应于 Gamma 点附近的声子模式。 +% 根据这些声子模式在拉曼实验中的表现，我们将这些声子分成三个部分。 + +Raman scattering peeks correspond to phonons located near $\Gamma$ point in reciprocal space. +We classified these phonons into three categories according to their behavior in Raman scattering: + (1) phonons could not be observed in Raman scattering spectrum, + either because they are Raman inactive or their scattering intensity is too weak; + (2) phonons could be observed in Raman scattering spectrum and with weak or no polarities, + their frequencies were independent of the direction of the incident light; + (3) strong polar phonons, + which were visible in Raman scattering spectrum, + and their frequencies depend on the direction of the incident light. + % 我们计算了 4H-SiC 在 A-Gamma 和 Gamma-M 上的声子频率，如图和附录1所示。 % 在拉曼散射中，起作用的模式都是那些非常接近于 Gamma 的模式 % （如图中的点所示，分为位于 1/50 和 1/100 处，这两条线分别对应于拉曼散射在 z 方向入射/散射和 y 方向入射/散射）。