From 87f25a4121c99bca4321c6003a26e96bdeb881f5 Mon Sep 17 00:00:00 2001
From: chn <chn@chn.moe>
Date: Fri, 27 Jun 2025 11:10:12 +0800
Subject: [PATCH]

---
 TODO.md                  | 10 ++++++++++
 paper/method/default.typ | 21 ++++++++++-----------
 2 files changed, 20 insertions(+), 11 deletions(-)
 create mode 100644 TODO.md

diff --git a/TODO.md b/TODO.md
new file mode 100644
index 0000000..356ff1b
--- /dev/null
+++ b/TODO.md
@@ -0,0 +1,10 @@
+* [ ] 文本
+  * [ ] method
+    * [ ] 无缺陷和缺陷的模型大小、缺陷结构
+    * [ ] 第一性原理计算和声子计算的工具
+* [ ] 实验
+  * [ ] 实验
+    * [ ] 测试不同片子的背面 LOPC，确认它们的掺杂是否相同
+  * [ ] 拟合
+    * [ ] 拟合最后一次正入射的结果，确定峰位移与掺杂等的关系
+    * [ ] 拟合带 LOPC 的 LO
diff --git a/paper/method/default.typ b/paper/method/default.typ
index d66f506..fff01cc 100644
--- a/paper/method/default.typ
+++ b/paper/method/default.typ
@@ -22,30 +22,29 @@ The Si/C ratios of the five wafers during growth were 0.7, 1.2, 1.6, 2.4, and 2.
 拉曼设备的型号是 LabRAM HR Evolution，使用背散射。
 大部分实验中，我们使用 532 nm 的激光，少部分实验中使用 325 nm 的激光以观测紫外拉曼。
 有三个不同的入射配置，包括正入射、掠入射、边入射。
-考虑到 4 度斜切和 4H-SiC 几乎各向同性的折射率（） @shaffer_refractive_1971 ，
+考虑到 4 度斜切和 4H-SiC 几乎各向同性的折射率（2.73） @shaffer_refractive_1971 ，掠入射的入射角大约为 25 度。
 在正散射过程中，我们使用 100 微米的共焦针孔，以尽可能提高 z 方向的分辨率 @song_depth_2020。
 
 All our Raman experiments were performed using a LabRAM HR Evolution system with back-scattering configuration,
   where collected scattered light has a reversed wavevector direction compared to the incident light.
 A 532 nm laser was used in most experiments,
   while a 325 nm laser was used to observe Raman signals under ultraviolet excitation.
-Three different incidece configurations were used, as shown in @figure-incidence:
-  normal incidence, where the laser beam is perpendicular to the epitaxial surface;
+Three different incidece configurations were used, as shown in @figure-incidence,
+  including normal incidence, where the laser beam is perpendicular to the epitaxial surface;
   grazing incidence, where the laser beam is nearly parallel to the epitaxial surface;
   and edge incidence, where the laser beam is incident at the edge of the wafer, instead of the epitaxial surface.
-Taking the 
-During the experiments, a 100 μm confocal pinhole was used to improve the z-direction resolution @song_depth_2020.
-
-    and the refracted light propagates with about 25 #sym.degree to the c axis;
+Taking the 4° offcut angle
+    and the nearly isotropic refractive index 2.73 of 4H-SiC @shaffer_refractive_1971 into account,
+  the wavevector in 4H-SiC during grazing incidence is about 25° to the c axis.
+During normal incidence, a 100 μm confocal pinhole was used to improve the z-direction resolution @song_depth_2020;
+  while during other configurations, 200 μm confocal pinhole was used to improve the signal-to-noise ratio.
 
 #include "figure-incidence.typ"
 
 == Simulation details
 
-无缺陷的模型大小。带缺陷的情况下，模型大小，每个模型的代号和缺陷结构。
+无缺陷的声子在多大的模型中计算。
+带缺陷的情况下，模型大小，每个模型的代号和缺陷结构。
 
 第一性原理计算使用 VASP，使用 PBE PAW，平面波截断能，K 点网格，涂抹，自洽和弛豫的 threshold。
 声子计算使用 phonopy phono3py ufo，BEC 修正的算法。
-
-// 在略入射的过程中，角度的关系不大（即使是 60 度入射，和 90 度入射差别也不大）。因此我们按照折射角 20 度的结果计算。
-// 考虑到斜切，则大约是 24 度。