test-typst/section/perfect/non-polar/default.typ

@@ -41,12 +41,12 @@ We propose a method to estimate the magnitudes of the Raman tensors of these pho
 This approach is founded on the assumption that the change in polarizability induced by atomic displacements in 4H-SiC
   is primarily determined by the first- and second-nearest neighbors of the atom and the sign of the atomic charge,
   while other factors (mass, bond length, etc.) only have small contributions.
-As a result,
-  the phonon modes with the strongest Raman intensities can be predicted
-    prior to first-principles calculations and experiments (appendix),
-  and the Raman tensors of the calculated phonon modes can be estimated
-    before additional first-principles computations.
-Further details are provided in the appendix.
+Consequently, the Raman tensors of the calculated phonon modes can be estimated
+    before additional first-principles computations (see appendix for details),
+  and the results are summarized in @table-nopol.
+The parameters $a_i$ exhibit significantly larger absolute values compared to $epsilon_i$, $eta_i$, and $zeta_i$,
+  indicating the E#sub[2] mode at 756.25 cm#super[-1] in simulation (mode 8)
+    possess a much higher Raman intensity than the others.
 
 The Raman tensors and frequencies of the negligible-polar phonons were calculated using first-principles methods,
   and the results are compared with both experimental data and theoretical predictions (@table-nopol).
@@ -78,24 +78,13 @@ The peek at 796 and 980 are caused by strong-polar phonons which will be discuss
 Besides, there are small peeks at xxx,
   which could not be explained in perfect 4H-SiC and will be discussed in the next section.
 
-The method only takes the vibration directions of each atom in each phonon mode,
-  leaving the amplitudes unconsidered (see appendix for details),
-  and the result was summarized in @table-predmode.
-In the Raman tensors in @table-predmode,
-  $a_i$ corresponding to the change of polarizability caused by movement of the Si atoms in A and C layers,
-  $epsilon_i$, $eta_i$ and $eta_i$ corresponding to the difference between different bilayers and different atoms.
-Due to the similarity of environment in different bilayers and around different atoms,
-  the absolute values of $epsilon_i$, $eta_i$ and $zeta_i$ are expected to be much smaller than that of $a_i$,
-  thus the Raman tensors containing $a_i$ are expected to be much larger than those not containing $a_i$.
-
-
 // TODO: 将一部分 phonons 改为 phonon modes
 // 在论文中我们这样来称呼：phonon 对应某一个特征向量，而 modes 对应于一个子空间。
 // 也就是说，简并的里面有两个或者无数个 phonon，但只有一个 mode
 
 #include "table-nopol.typ"
 
-#include "raman.typ"
+#include "figure-raman.typ"
 
 // 实验与计算基本相符。对于声子频率，计算总是低估大约 3%。
 // 此外，一些较强的模式在预测无法看到的偏振中也可以看到。例如，一些在 xy 偏振中不应该看到的模式可以被看到了。

test-typst/section/perfect/non-polar/table-nopol.typ

@@ -63,5 +63,5 @@
     //              E2 E2       E1        2B1       A1 E1       E2 E2       A1          2B1
     m2[*Polarity*], m(4)[None], m2[Weak], m2[None], m(4)[Weak], m(4)[None], m2[Weak], m2[None],
   )},
-  caption: [Negaligible-polarized Phonons at $Gamma$ Point],
+  caption: [Negaligible-polarized Phonons at $Gamma$ Point.],
 )<table-nopol>]