This commit is contained in:
@@ -8,24 +8,27 @@ The 4H-SiC has a wider bandgap, higher critical electric field strength,
|
||||
higher thermal conductivity, and higher electron mobility along the c-axis than other polytypes.
|
||||
Currently, the 4H-SiC has gradually received more attention than other polytypes,
|
||||
thanks to the development of epitaxy technology and the increasing application in the new energy industry
|
||||
@tsuchida_recent_2018 @harada_suppression_2022 @sun_selection_2022. // TODO: 多引用一些近年来的文献,有很多
|
||||
@tsuchida_recent_2018 @harada_suppression_2022 @sun_selection_2022.
|
||||
// TODO: 多引用一些近年来的文献,有很多
|
||||
// TODO: 这段是直接从上一篇论文中节选的,需要修改一下以避免重复。
|
||||
|
||||
// 声子(量子化的原子振动)在理解晶体的原子结构以及热电性质方面起着重要作用。
|
||||
// 声子可以通过多种实验技术来探测,包括 EELS、IR 吸收谱等。
|
||||
// 拉曼光谱是最常用的方法,它提供了一种无损、非接触、快速和局部的声子测量方法,已被广泛用于确定晶体的原子结构(包括区分 SiC 的多型)。
|
||||
Phonons (quantized atomic vibrations) play a fundamental role
|
||||
in understanding the atomic structure
|
||||
as well as the thermal and electrical properties
|
||||
of crystals (including 4H-SiC).
|
||||
in understanding the atomic structure as well as the thermal and electrical properties of semiconductors.
|
||||
They could be probed by various experimental techniques,
|
||||
such as electron energy loss spectroscopy and infrared absorption spectroscopy.
|
||||
// TODO: 这里加一两个 EELS 和 IR 的引用,有就行
|
||||
Among these techniques,
|
||||
Raman spectroscopy is the most commonly used method,
|
||||
// TODO: 增加一些引用,可以先不用收集文献给这里,最后把其它部分的全拿过来就行了。
|
||||
as it provides non-destructive, non-contact, rapid and spatially localized measurement of phonons
|
||||
that near the #sym.Gamma point in reciprocal space.
|
||||
Studies in Raman scattering of 4H-SiC have been conducted since as early as 1983
|
||||
// TODO: 找到那一篇
|
||||
and have been widely employed to identification of different SiC polytypes.
|
||||
// TODO: 增加引用文献
|
||||
// TODO: 找一些用来判定多型的文献
|
||||
|
||||
// 近年来,更多信息被从拉曼光谱中挖掘出来。
|
||||
// LOPC 已经被用于快速估计 n 型 SiC 的掺杂浓度。
|
||||
@@ -33,16 +36,27 @@ Studies in Raman scattering of 4H-SiC have been conducted since as early as 1983
|
||||
// 掺杂对拉曼光谱的潜在影响也已经被研究。
|
||||
// 然而,拉曼光谱上仍有一些不知来源的峰;同时,一些也缺少一些理论上预测应该存在的峰。
|
||||
// 此外,预测掺杂导致的新峰也没有说明原因。
|
||||
Increasingly rich information has been extracted from Raman spectra of 4H-SiC.
|
||||
In recent years, increasingly rich information has been extracted from Raman spectra of 4H-SiC.
|
||||
Longitudinal optical phonon–plasmon coupling (LOPC) peek
|
||||
has been utilized to rapidly estimate the doping concentration in n-type SiC.
|
||||
has been utilized to rapidly estimate the doping concentration in n-type SiC,
|
||||
// TODO: 增加使用 LOPC 估计 n 型掺杂浓度的论文
|
||||
and the existence of LO peek have been used to different the focus in p-type epilayer and in n-type substrate.
|
||||
// TODO: LOPC 来区分外延层和衬底的文献
|
||||
Peeks associated with some stacking faults have also been investigated
|
||||
and used to detect the presence and location of specific structural faults.
|
||||
// TODO: 缺陷峰,并补充对应的文献
|
||||
Moreover, the potential effects of doping on Raman spectra have been explored.
|
||||
However, some unidentified peaks still appear in the Raman spectra,
|
||||
while certain phonon modes predicted by theory remain unobserved.
|
||||
In addition, the origins of newly emerged peaks induced by doping are often unclear or unexplained.
|
||||
// TODO: 多举例,增加引用文献
|
||||
// TODO: 掺杂导致的本征峰的变化的文献
|
||||
However, there are still some unsolved issues.
|
||||
Certain phonon modes predicted by theory remain unobserved,
|
||||
while there are still some unidentified peaks in the Raman spectra.
|
||||
An A1 peek was observed in some experiment but not in others, the reason for which is still unclear.
|
||||
In addition, relation between defects and Raman peek is still not very clear,
|
||||
potential raman peeks caused by defects and doping still need to be explored.
|
||||
// TODO: 调整语言,细化描述
|
||||
|
||||
In this paper, we do some things. Especially we do something for the first time.
|
||||
// TODO: 完善
|
||||
In this paper, we explored the phonon in 4H-SiC by three ways:
|
||||
symmetry analysis, first-principles calculations, and Raman experiment.
|
||||
We first investigated the phonon modes in perfect 4H-SiC,
|
||||
and then explored the phonon modes associated with defects and doping.
|
||||
// TODO: 描述自己做了什么,强调自己是第一次做到了什么。
|
||||
|
||||
Reference in New Issue
Block a user