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2025-06-03 15:23:20 +08:00
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@@ -8,24 +8,27 @@ The 4H-SiC has a wider bandgap, higher critical electric field strength,
higher thermal conductivity, and higher electron mobility along the c-axis than other polytypes.
Currently, the 4H-SiC has gradually received more attention than other polytypes,
thanks to the development of epitaxy technology and the increasing application in the new energy industry
@tsuchida_recent_2018 @harada_suppression_2022 @sun_selection_2022. // TODO: 多引用一些近年来的文献,有很多
@tsuchida_recent_2018 @harada_suppression_2022 @sun_selection_2022.
// TODO: 多引用一些近年来的文献,有很多
// TODO: 这段是直接从上一篇论文中节选的,需要修改一下以避免重复。
// 声子(量子化的原子振动)在理解晶体的原子结构以及热电性质方面起着重要作用。
// 声子可以通过多种实验技术来探测,包括 EELS、IR 吸收谱等。
// 拉曼光谱是最常用的方法,它提供了一种无损、非接触、快速和局部的声子测量方法,已被广泛用于确定晶体的原子结构(包括区分 SiC 的多型)。
Phonons (quantized atomic vibrations) play a fundamental role
in understanding the atomic structure
as well as the thermal and electrical properties
of crystals (including 4H-SiC).
in understanding the atomic structure as well as the thermal and electrical properties of semiconductors.
They could be probed by various experimental techniques,
such as electron energy loss spectroscopy and infrared absorption spectroscopy.
// TODO: 这里加一两个 EELS 和 IR 的引用,有就行
Among these techniques,
Raman spectroscopy is the most commonly used method,
// TODO: 增加一些引用,可以先不用收集文献给这里,最后把其它部分的全拿过来就行了。
as it provides non-destructive, non-contact, rapid and spatially localized measurement of phonons
that near the #sym.Gamma point in reciprocal space.
Studies in Raman scattering of 4H-SiC have been conducted since as early as 1983
// TODO: 找到那一篇
and have been widely employed to identification of different SiC polytypes.
// TODO: 增加引用文献
// TODO: 找一些用来判定多型的文献
// 近年来,更多信息被从拉曼光谱中挖掘出来。
// LOPC 已经被用于快速估计 n 型 SiC 的掺杂浓度。
@@ -33,16 +36,27 @@ Studies in Raman scattering of 4H-SiC have been conducted since as early as 1983
// 掺杂对拉曼光谱的潜在影响也已经被研究。
// 然而,拉曼光谱上仍有一些不知来源的峰;同时,一些也缺少一些理论上预测应该存在的峰。
// 此外,预测掺杂导致的新峰也没有说明原因。
Increasingly rich information has been extracted from Raman spectra of 4H-SiC.
In recent years, increasingly rich information has been extracted from Raman spectra of 4H-SiC.
Longitudinal optical phononplasmon coupling (LOPC) peek
has been utilized to rapidly estimate the doping concentration in n-type SiC.
has been utilized to rapidly estimate the doping concentration in n-type SiC,
// TODO: 增加使用 LOPC 估计 n 型掺杂浓度的论文
and the existence of LO peek have been used to different the focus in p-type epilayer and in n-type substrate.
// TODO: LOPC 来区分外延层和衬底的文献
Peeks associated with some stacking faults have also been investigated
and used to detect the presence and location of specific structural faults.
// TODO: 缺陷峰,并补充对应的文献
Moreover, the potential effects of doping on Raman spectra have been explored.
However, some unidentified peaks still appear in the Raman spectra,
while certain phonon modes predicted by theory remain unobserved.
In addition, the origins of newly emerged peaks induced by doping are often unclear or unexplained.
// TODO: 多举例,增加引用文献
// TODO: 掺杂导致的本征峰的变化的文献
However, there are still some unsolved issues.
Certain phonon modes predicted by theory remain unobserved,
while there are still some unidentified peaks in the Raman spectra.
An A1 peek was observed in some experiment but not in others, the reason for which is still unclear.
In addition, relation between defects and Raman peek is still not very clear
potential raman peeks caused by defects and doping still need to be explored.
// TODO: 调整语言,细化描述
In this paper, we do some things. Especially we do something for the first time.
// TODO: 完善
In this paper, we explored the phonon in 4H-SiC by three ways:
symmetry analysis, first-principles calculations, and Raman experiment.
We first investigated the phonon modes in perfect 4H-SiC,
and then explored the phonon modes associated with defects and doping.
// TODO: 描述自己做了什么,强调自己是第一次做到了什么。