diff --git a/.gitignore b/.gitignore index 181d655..8263cbf 100644 --- a/.gitignore +++ b/.gitignore @@ -1 +1,2 @@ .~lock* +.vscode diff --git a/paper/main.tex b/paper/main.tex index 3391290..17a7331 100644 --- a/paper/main.tex +++ b/paper/main.tex @@ -272,9 +272,9 @@ Thus, we divide the phonons of defect-free 4H-SiC into three categories: \\ \textbf{Wavenumber (Simulation) ($\mathrm{cm^{-1}}$)} & \SetCell[c=3]{} $190.51$ & & % E2 - & \SetCell[c=3]{} $190.51$ & & % E2 + & \SetCell[c=3]{} $197.84$ & & % E2 & \SetCell[c=2]{} $257.35$ & % E1 - & $389.96$ & $389.96$ % 2B1 + & $389.96$ & $397.49$ % 2B1 & \SetCell[c=3]{} $591.90$ & & % A1 & \SetCell[c=2]{} $746.91$ & % E1 & \SetCell[c=3]{} $756.25$ & & % E2 @@ -377,7 +377,7 @@ Thus, we divide the phonons of defect-free 4H-SiC into three categories: \\ \textbf{Raman Intensity (a.u.)} & \SetCell[c=2]{} $53.52$ & % z E1 - & \SetCell[c=2]{} $53.52$ & & $464.69$ % z A1 + & \SetCell[c=2]{} $58.26$ & & $464.69$ % z A1 & \SetCell[c=2]{} $56.86$ & & $454.09$ % y z & $53.52$ % y x & $53.55$ % y y diff --git a/test-typst/main.typ b/test-typst/main.typ index 9ab8297..5e11641 100644 --- a/test-typst/main.typ +++ b/test-typst/main.typ @@ -1,5 +1,6 @@ #import "@preview/starter-journal-article:0.4.0": article, author-meta #import "@preview/tablem:0.2.0": tablem +#set par.line(numbering: "1") #show: article.with( title: "Article Title", @@ -17,27 +18,210 @@ "xmu": "Xiamen University", ), abstract: [#lorem(100)], - keywords: ("Typst", "Template", "Journal Article") + keywords: ("Typst", "Template", "Journal Article"), + // template: (body: (body) => { + // show heading.where(level: 1): it => block(above: 1.5em, below: 1.5em)[ + // #set pad(bottom: 2em, top: 1em) + // #it.body + // ] + // set par(first-line-indent: (amount: 2em, all: true)) + // set footnote(numbering: "1") + // body + // }) ) -= Section += Introduction -write #linebreak() something +// SiC 是很好的材料。 +// 其中，4H-SiC 是SiC的一种多型，它的性质更好，近年来随着外延工艺的成熟而获得了更多的关注。 +SiC is a promising wide-bandgap semiconductor material + with high critical electric field strength and high thermal conductivity. + It has been widely used in power electronic devices and has long attracted a lot of research + @casady_status_1996 @okumura_present_2006. +The 4H-SiC has a wider bandgap, higher critical electric field strength, + higher thermal conductivity, and higher electron mobility along the c-axis than other polytypes. +Currently, the 4H-SiC has gradually received more attention than other polytypes, + thanks to the development of epitaxy technology and the increasing application in the new energy industry + @tsuchida_recent_2018 @harada_suppression_2022 @sun_selection_2022. // TODO: 多引用一些近年来的文献，有很多 -#tablem(ignore-second-row: false)[ - | *Name* | *Location* | *Height* | *Score* | - | John | Second St. | $alpha / beta$ | 5 | - | Wally | Third Av. | 160 #linebreak() cm | < | +// 声子（量子化的原子振动）在理解晶体的原子结构以及热电性质方面起着重要作用。 +// 声子可以通过多种实验技术来探测，包括 EELS、IR 吸收谱等。 +// 拉曼光谱是最常用的方法，它提供了一种无损、非接触、快速和局部的声子测量方法，已被广泛用于确定晶体的原子结构（包括区分 SiC 的多型）。 +Phonons (quantized atomic vibrations) play a fundamental role + in understanding the atomic structure + as well as the thermal and electrical properties + of crystals (including 4H-SiC). +They could be probed by various experimental techniques, + such as electron energy loss spectroscopy and infrared absorption spectroscopy. +Among these techniques, + Raman spectroscopy is the most commonly used method, + as it provides non-destructive, non-contact, rapid and spatially localized measurement of phonons + that near the $Gamma$ point in reciprocal space. +Studies in Raman scattering of 4H-SiC have been conducted since as early as 1983 + and have been widely employed to identification of different SiC polytypes. + +// 近年来，更多信息被从拉曼光谱中挖掘出来。 +// LOPC 已经被用于快速估计 n 型 SiC 的掺杂浓度。 +// 层错的拉曼光谱也已经被研究，可以被用于检测特定结构层错的存在和位置。 +// 掺杂对拉曼光谱的潜在影响也已经被研究。 +// 然而，拉曼光谱上仍有一些不知来源的峰；同时，一些也缺少一些理论上预测应该存在的峰。 +// 此外，预测掺杂导致的新峰也没有说明原因。 +Increasingly rich information has been extracted from Raman spectra of 4H-SiC. +Longitudinal optical phonon–plasmon coupling (LOPC) peek + has been utilized to rapidly estimate the doping concentration in n-type SiC. +Peeks associated with some stacking faults have also been investigated + and used to detect the presence and location of specific structural faults. +Moreover, the potential effects of doping on Raman spectra have been explored. +However, some unidentified peaks still appear in the Raman spectra, + while certain phonon modes predicted by theory remain unobserved. +In addition, the origins of newly emerged peaks induced by doping are often unclear or unexplained. + +In this paper, we do some things. We do something for the first time. + += Method + += Results and Discussion + +// 拉曼活性的声子模式对应于 Gamma 点附近的声子模式。 +// 根据这些声子模式在拉曼实验中的表现，我们将这些声子分成三个部分。 + +Raman scattering peeks correspond to phonons located near $Gamma$ point in reciprocal space. +We classified these phonons into three categories according to their behavior in Raman scattering: + (1) phonons could not be observed in Raman scattering spectrum, + either because they are Raman inactive or their scattering intensity is too weak; + (2) phonons could be observed in Raman scattering spectrum and with weak or no polarities, + their frequencies were independent of the direction of the incident light; + (3) strong polar phonons, + which were visible in Raman scattering spectrum, + and their frequencies depend on the direction of the incident light. + +// 我们计算了 4H-SiC 在 A-Gamma 和 Gamma-M 上的声子频率，如图和附录1所示。 +// 在拉曼散射中，起作用的模式都是那些非常接近于 Gamma 的模式 +// （如图中的点所示，分为位于 1/50 和 1/100 处，这两条线分别对应于拉曼散射在 z 方向入射/散射和 y 方向入射/散射）。 +// 大多数声子模式在 Gamma 附近都是连续的，这使得它们的频率对入射光的方向不敏感； +// 然而，少数声子具有较强的极性，这使得声子之间存在长程的库伦相互作用（引用文献），并导致 gamma 附近的频率不同，如图中的某两条线所示。 +// 据此，我们将无缺陷的 4H-SiC 的声子分成三类： +// 无拉曼活性或拉曼散射强度太弱的模式，它们在拉曼散射谱上不可见； +// 拉曼散射强度足够大且极性不强的模式，它们在拉曼散射谱上可以看到，且频率与拉曼入射光方向无关； +// 极性声子，它们在拉曼散射谱上可以看到，不仅频率与入射光方向有关，而且可与载流子发生一些相互作用。 + +Phonons in defect-free 4H-SiC are calculated at A-$Gamma$ and $Gamma$-M, + as shown in Figure \ref{fig:phonon} and Table \ref{tab:phonon}. +Raman active phonons are very close to $Gamma$, + as indicated by the points in the figure. +Because of the consistency of the most phonon modes near $Gamma$, + most of the phonon frequencies are insensitive to the direction of the incident light. +However, some phonons have strong polarities, + which leads to long-range Coulomb interactions between phonons, + and results in different frequencies near $Gamma$, + as shown by the two lines in the figure. +Thus, we divide the phonons of defect-free 4H-SiC into three categories: + (1) Raman inactive or too weak Raman intensity, + which are invisible in the Raman scattering spectrum; + (2) Raman active phonons with strong polarities, + which are visible in the Raman scattering spectrum, + and their frequencies are independent of the direction of the incident light; + (3) Polar phonons, + which are visible in the Raman scattering spectrum, + and their frequencies depend on the direction of the incident light, + and can interact with carriers. + +#page(flipped: true)[ + #let m(n, content) = table.cell(colspan: n, content); + #let mCell(n, content) = m(n, content); + #let A1 = [A#sub[1]]; + #let A2 = [A#sub[2]]; + #let B1 = [B#sub[1]]; + #let B2 = [B#sub[2]]; + #let E1 = [E#sub[1]]; + #let E2 = [E#sub[2]]; + #figure( + table(columns: 27, align: center + horizon, inset: (x: 3pt, y: 5pt), + [*Direction of Incident & Scattered Light*], + m(26)[Any direction (not depend on direction of incident & scattered light)], + [*Number of Phonon*], + // E2 E2 E1 2B1 A1 + [1], m(2)[2], [3], m(2)[4], [5], [6], [7], [8], m(3)[9], + // E1 E2 E2 A1 2B1 + [10], [11], [12], m(2)[13], [14], m(2)[15], m(3)[16], [17], [18], + [*Vibration Direction*], + // E2 E2 E1 2B1 A1 + [x], m(2)[y], [x], m(2)[y], [x], [y], [z], [z], m(3)[z], + // E1 E2 E2 A1 2B1 + [x], [y], [x], m(2)[y], [x], m(2)[y], m(3)[z], [z], [z], + [*Representation in Group C#sub[6v]*], + m(3, E2), m(3, E2), m(2, E1), B1, B1, m(3, A1), m(2, E1), m(3, E2), m(3, E2), m(3, A1), B1, B1, + [*Representation in Group C#sub[2v]*], + // E2 E2 E1 2B1 A1 E1 E2 E2 A1 2B1 + A2, m(2, A1), A2, m(2, A1), B2, B1, B1, B1, m(3, A1), B2, B1, A2, m(2, A1), A2, m(2, A1), m(3, A1), B1, B1, + [*Scattering in Polarization*], + // E2 E2 E1 2B1 A1 + [xy], [xx], [yy], [xy], [xx], [yy], [xz], [yz], [-], [-], [xx], [yy], [zz], + // E1 E2 E2 A1 2B1 + [xz], [yz], [xy], [xx], [yy], [xy], [xx], [yy], [xx], [yy], [zz], [-], [-], + [*Raman Intensity (a.u.)*], + // E2 E2 E1 2B1 A1 + m(3)[0.17], m(3)[1.13], m(2)[2.43], [0], [0], m(2)[2.83], [1.79], + // E1 E2 E2 A1 2B1 + m(2)[0.09], m(3)[88.54], m(3)[0.50], m(2)[0.01], [1.78], [0], [0], + [*Visible in Common Raman Experiment*], + // E2 E2 E1 2B1 A1 + m(3)[Yes], m(3)[Yes], m(2)[Yes], [No], [No], m(3)[Yes], + // E1 E2 E2 A1 2B1 + m(2)[No], m(3)[Yes], m(3)[No], m(2)[No], [Yes], [No], [No], + [*Wavenumber (Simulation) (cm#super[-1])*], + // E2 E2 E1 2B1 A1 + m(3)[190.51], m(3)[197.84], m(2)[257.35], [389.96], [397.49], m(3)[591.90], + // E1 E2 E2 A1 2B1 + m(2)[746.91], m(3)[756.25], m(3)[764.33], m(3)[812.87], [885.68], [894.13], + [*Wavenumber (Experiment) (cm#super[-1])*], + // E2 E2 E1 2B1 A1 + m(3)[195.5], m(3)[203.3], m(2)[269.7], [-], [-], m(3)[609.5], + // E1 E2 E2 A1 2B1 + m(2)[-], m(3)[776], m(3)[-], m(2)[-], [839], [-], [-], + [*Electrical Polarity*], + // E2 E2 E1 2B1 A1 + m(3)[None], m(3)[None], m(2)[Weak], [None], [None], m(3)[Weak], + // E1 E2 E2 A1 2B1 + m(2)[Weak], m(3)[None], m(3)[None], m(3)[Weak], [None], [None], + ), + caption: [Weak- and None-polarized phonons near $Gamma$ point], + ) + #figure({ + let NA = [Not Applicable]; + let yzmix = [y-z mixed#linebreak() (LO-TO mixed)]; + let lopc = [Yes#linebreak() (LOPC)]; + let overf = [Yes#linebreak() (overfocused)]; + table(columns: 20, align: center + horizon, inset: (x: 3pt, y: 5pt), + [*Direction of Incident & Scattered Light*], m(5)[z], m(5)[y], m(9)[between z and y, 10#sym.degree to z], + // z y 45 y&z + [*Number of Phonon*], [1], [2], m(3)[3], m(3)[1], [2], [3], m(4)[1], [2], m(4)[3], + [*Vibration Direction*], + [x#linebreak() (TO)], [y#linebreak() (TO)], m(3)[z (LO)], // z + m(3)[z (TO)], [x#linebreak() (TO)], [y (LO)], // y + m(4, yzmix), [x#linebreak() (TO)], m(4, yzmix), // 45 y&z + [*Representation in Group C#sub[6v]*], m(2, E1), m(3, A1), m(14, NA), + // z y 45 y&z + [*Representation in Group C#sub[2v]*], B2, B1, m(3, A1), m(3, A1), B2, B1, m(4, NA), B2, m(4, NA), + [*Scattering in Polarization*], + [xz], [yz], [xx], [yy], [zz], // z + [xx], [yy], [zz], [xz], [yz], // y + [xx], [yy], [yz], [zz], [xz], [xx], [yy], [yz], [zz], // 45 y&z + [*Raman Intensity (a.u.)*], + m(2)[53.52], m(2)[58.26], [464.69], // z + m(2)[58.26], [454.09], [53.52], [53.55], // y + m(2)[53.71], [3.20], [425.98], [53.56], m(2)[3.60], [50.36], [27.99], // 45 y&z + [*Visible in Common Raman Experiment*], + m(2)[Yes], m(2, lopc), [No], // z + overf, [No], overf, [Yes], lopc, // y + m(4)[???], [???], m(4)[???], // 45 y&z + [*Wavenumber (Simulation) (cm#super[-1])*], + // z y 45 y&z + m(2)[776.57], m(3)[933.80], m(3)[761.80], [776.57], [941.33], m(4)[762.76], [776.57], m(4)[940.86], + [*Electrical Polarity*], m(19)[Strong] + )}, + caption: [Strong-polarized phonons near $Gamma$ point], + ) ] -#lorem(20) @okumura_present_2006 - -== Subsection - -#lorem(50) - -=== Subsubsection - -#lorem(80) - -#bibliography("./ref.bib") +#bibliography("./ref.bib", title: "Reference", style: "american-physics-society") diff --git a/test-typst/ref.bib b/test-typst/ref.bib index dcbfc3b..508d0c3 100644 --- a/test-typst/ref.bib +++ b/test-typst/ref.bib @@ -4,6 +4,7 @@ volume = {45}, issn = {0021-4922, 1347-4065}, doi = {10.1143/JJAP.45.7565}, + language = {en}, number = {10A}, urldate = {2022-09-27}, journal = {Japanese Journal of Applied Physics}, @@ -18,6 +19,7 @@ title = {Status of {Silicon} {Carbide} ({SiC}) as a {Wide}-bandgap {Emiconductor} for {High}-temperature {Applications}: a {Review}}, volume = {39}, doi = {10.1016/0038-1101(96)00045-7}, + language = {en}, number = {10}, journal = {Solid-State Electronics}, author = {Casady, J B and Johnson, R W}, @@ -33,6 +35,7 @@ issn = {13698001}, doi = {10.1016/j.mssp.2017.11.003}, abstract = {This paper reports recent advances in high-quality 4H-SiC epitaxial growth. The modern 4H-SiC epitaxial reactors, techniques to improve growth rates and large-diameter uniformity and reduce defect densities are discussed. A single-wafer vertical-type epitaxial reactor is newly developed and employed to grow 150 mm-diameter 4H-SiC epilayers. Using the reactor, high-speed wafer rotation is confirmed effective, both for enhancing growth rates and improving thickness and doping uniformities. Current levels of reducing particle-induced defects, in-grown stacking faults and basal plane dislocations and controlling carrier lifetimes are also reviewed.}, + language = {en}, urldate = {2022-10-06}, journal = {Materials Science in Semiconductor Processing}, author = {Tsuchida, Hidekazu and Kamata, Isaho and Miyazawa, Tetsuya and Ito, Masahiko and Zhang, Xuan and Nagano, Masahiro}, @@ -50,6 +53,7 @@ url = {https://linkinghub.elsevier.com/retrieve/pii/S0169433222024771}, doi = {10.1016/j.apsusc.2022.154949}, abstract = {Silicon carbide (SiC) has gained increased interest due to industry demand, especially for the 4H-SiC. Never­ theless, the ‘structural mutation’ in the 4H-SiC epitaxy is in urgent need of investigation and proper solution as the epitaxial thickness/wafer size increases. In this study, growth monomers in the step-flow mode were firstly investigated by the first-principles calculations for their dynamic and kinetic behaviours from an atomic level. The stability (by the comprehensive analyses of total energies, chemical potentials, and formation enthalpies) and the location of adsorptions were studied to reveal the dynamics. Meanwhile, the potential barrier of Si-Si interaction and phonon spectra were determined to understand the kinetics. We found monomers could be selected by controlling chemical potentials to make ordering growth. Secondly, two methods were thus inferred to select monomers to adsorb on atomic step surfaces in an orderly fashion and were verified in a six-inch epitaxy. Thirdly, a protocol was designed to restrict the extension of basal plane dislocation (BPD) from sub­ strates, a reduction greater than five orders of magnitude was gained but without time compromise in the thickfilm epitaxy. This study provided new insights into growth on the 4H-SiC (0001) atomic step surfaces and a new way of 4H-SiC homo-epitaxy.}, + language = {en}, urldate = {2022-10-06}, journal = {Applied Surface Science}, author = {Sun, Yongqiang and Kang, Wenyu and Chen, Haonan and Chen, Xinlu and Dong, Yue and Lin, Wei and Kang, Junyong}, @@ -59,6 +63,29 @@ file = {Sun et al. - 2022 - Selection of growth monomers on the 4H-SiC (0001) .pdf:/home/chn/Zotero/storage/VTGL4G53/Sun et al. - 2022 - Selection of growth monomers on the 4H-SiC (0001) .pdf:application/pdf}, } +@article{harada_suppression_2022, + title = {Suppression of stacking fault expansion in a {4H}-{SiC} epitaxial layer by proton irradiation}, + volume = {12}, + issn = {2045-2322}, + doi = {10.1038/s41598-022-17060-y}, + abstract = {Abstract + + SiC bipolar degradation, which is caused by stacking fault expansion from basal plane dislocations in a SiC epitaxial layer or near the interface between the epitaxial layer and the substrate, is one of the critical problems inhibiting widespread usage of high-voltage SiC bipolar devices. In the present study, we investigated the stacking fault expansion behavior under UV illumination in a 4H-SiC epitaxial layer subjected to proton irradiation. X-ray topography observations revealed that proton irradiation suppressed stacking fault expansion. Excess carrier lifetime measurements showed that stacking fault expansion was suppressed in 4H-SiC epitaxial layers with proton irradiation at a fluence of 1 × 10 + 11 +  cm + −2 + without evident reduction of the excess carrier lifetime. Furthermore, stacking fault expansion was also suppressed even after high-temperature annealing to recover the excess carrier lifetime. These results implied that passivation of dislocation cores by protons hinders recombination-enhanced dislocation glide motion under UV illumination.}, + language = {en}, + number = {1}, + urldate = {2022-10-06}, + journal = {Scientific Reports}, + author = {Harada, Shunta and Mii, Toshiki and Sakane, Hitoshi and Kato, Masashi}, + month = aug, + year = {2022}, + pages = {13542}, + file = {Harada et al. - 2022 - Suppression of stacking fault expansion in a 4H-Si.pdf:/home/chn/Zotero/storage/VJ7H4G59/Harada et al. - 2022 - Suppression of stacking fault expansion in a 4H-Si.pdf:application/pdf}, +} + @article{harada_observation_2022, title = {Observation of in-plane shear stress fields in off-axis {SiC} wafers by birefringence imaging}, volume = {55}, @@ -66,6 +93,7 @@ url = {https://scripts.iucr.org/cgi-bin/paper?S1600576722006483}, doi = {10.1107/S1600576722006483}, abstract = {For the nondestructive characterization of SiC wafers for power device application, birefringence imaging is one of the promising methods. In the present study, it is demonstrated that birefringence image contrast variation in off-axis SiC wafers corresponds to the in-plane shear stress under conditions slightly deviating from crossed Nicols according to both theoretical consideration and experimental observation. The current results indicate that the characterization of defects in SiC wafers is possible to achieve by birefringence imaging.}, + language = {en}, number = {4}, urldate = {2023-06-14}, journal = {Journal of Applied Crystallography},