paper/method/default.typ

@@ -28,18 +28,18 @@ The Si/C ratios during growth were 0.7, 1.2, 1.6, 2.4, and 2.0 for the five wafe
   而在掠入射时，拉曼信号较弱，因此使用较长的积分时间（约 300 秒）。
 
 All Raman experiments were conducted using a LabRAM HR Evolution system in a back-scattering configuration,
-  where the collected scattered light propagates in the opposite direction to the incident laser.
-A 532 nm laser served as the primary excitation source,
+  where the scattered light was collected in the direction opposite to the incident laser.
+A 532 nm laser was primarily used as the excitation source,
   while a 325 nm laser was employed for only ultraviolet Raman measurements.
 Three distinct incidence configurations were utilized, as illustrated in @figure-incidence:
   (i) normal incidence, where the laser incident perpendicularly to the epitaxial surface;
   (ii) grazing incidence, where the laser incident nearly parallelly to the epitaxial surface;
   and (iii) edge incidence, where the laser is incident at the wafer edge and perpendicularly to the edge surface.
 Considering the 4° offcut angle and the nearly isotropic refractive index of 2.73 for 4H-SiC @shaffer_refractive_1971,
-  the refracted laser in 4H-SiC during grazing incidence forms an angle of approximately 25° with the c axis.
+  the refracted laser in grazing incidence forms an angle of approximately 25° with the c axis.
 A 100 μm confocal pinhole was used for normal incidence to enhance axial (z-direction) resolution @song_depth_2020,
   while a 200 μm pinhole was employed for the other configurations to improve the signal-to-noise ratio.
-Besides, the integration time was set to 60 seconds for normal and edge incidence,
+The integration time was set to 60 seconds for normal and edge incidence,
   while it was extended to 300 seconds for grazing incidence due to the weaker Raman signal.
 
 #include "figure-incidence.typ"